Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words ' Ishiwara, H' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 79 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Ishiwara, H
      Recent progress of FET-type ferroelectric memories

      INTEGRATED FERROELECTRICS
    2. Park, BE; Ishiwara, H
      Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers

      INTEGRATED FERROELECTRICS
    3. Ishiwara, H
      Special issue on nonvolatile memories - Foreword

      IEICE TRANSACTIONS ON ELECTRONICS
    4. Ogasawara, S; Yoon, SM; Ishiwara, H
      Fabrication and characterization of 1T2C-type ferroelectric memory cell

      IEICE TRANSACTIONS ON ELECTRONICS
    5. Ogata, N; Ishiwara, H
      A model for high frequency C-V characteristics of ferroelectric capacitors

      IEICE TRANSACTIONS ON ELECTRONICS
    6. Tamura, T; Arimoto, Y; Ishiwara, H
      A parallel element model for simulating switching response of ferroelectric capacitors

      IEICE TRANSACTIONS ON ELECTRONICS
    7. Moon, BK; Ishiwara, H; Tokumitsu, E; Yoshimoto, M
      Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates

      THIN SOLID FILMS
    8. Yoon, SM; Ishiwara, H
      Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    9. Park, BE; Ishiwara, H
      Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures

      APPLIED PHYSICS LETTERS
    10. Fujisaki, Y; Kijima, T; Ishiwara, H
      High-performance metal-ferroelectric-insulator-semiconductor structures with a damage-free and hydrogen-free silicon-nitride buffer layer

      APPLIED PHYSICS LETTERS
    11. Wang, XH; Ishiwara, H
      Sol-gel derived ferroelectric Pb(Zr1-xTix)O-3-SiO2-B2O3 glass-ceramic thinfilms formed at relatively low annealing temperatures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. Tokumitsu, E; Isobe, T; Kijima, T; Ishiwara, H
      Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)(4)Ti3O12 films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. Tokumitsu, E; Okamoto, K; Ishiwara, H
      Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    14. Yamamoto, S; Kato, T; Ishiwara, H
      A novel simulation program with integrated circuit emphasis (SPICE) model of ferroelectric capacitors using Schmitt trigger circuit

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    15. Kijima, T; Fujisaki, Y; Ishiwara, H
      Fabrication and characterization of Pt/(Bi, La)(4)Ti3O12/Si3N4/Si metal ferroelectric insulator semiconductor structure for FET-type ferroelectric memory applications

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. Wang, XS; Ishiwara, H
      Structural and electrical properties of ferroelectric Pb(Zr1-xTix)O-3-SiO2glass-ceramic thin films derived by the sol-gel method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. Imada, S; Kuraoka, T; Tokumitsu, E; Ishiwara, H
      Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. Yoon, SM; Ishiwara, H
      Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    19. Yoon, SM; Tokumitsu, E; Ishiwara, H
      Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    20. Aizawa, K; Tokumitsu, E; Okamoto, K; Ishiwara, H
      Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films

      APPLIED PHYSICS LETTERS
    21. Tokumitsu, E; Takahashi, D; Ishiwara, H
      Characterization of metal-ferroelectric-(metal-)insulator-Semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O-3 and Y2O3 films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    22. Yoon, SM; Tokumitsu, E; Ishiwara, H
      Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. Tokumitsu, E; Fujii, G; Ishiwara, H
      Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. Aizawa, K; Ishiwara, H
      Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    25. Fujisaki, Y; Ishiwara, H
      Damage-free and hydrogen-free nitridation of silicon substrate by nitrogenradical source

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    26. Aizawa, K; Ishiwara, H
      Fabrication and characterization of MFSFET arrays using Al/BaMgF4/Si(111) structures

      INTEGRATED FERROELECTRICS
    27. Sarinanto, MM; Imada, S; Shoriki, S; Park, BE; Tokumitsu, E; Ishiwara, H
      TEM observation of ferroelectric films grown on silicon using Y2O3 buffer layer

      INTEGRATED FERROELECTRICS
    28. Jimbo, T; Sano, H; Takahashi, Y; Funakubo, H; Tokumitsu, E; Ishiwara, H
      Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate

      INTEGRATED FERROELECTRICS
    29. Yoon, SM; Tokumitsu, E; Ishiwara, H
      An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi2Ta2O9 thin films

      IEEE ELECTRON DEVICE LETTERS
    30. Yoon, SM; Tokumitsu, E; Ishiwara, H
      Adaptive-learning neuron integrated circuits using metal-ferroelectric (SrBi2Ta2O9)-semiconductor (MFS) FET's

      IEEE ELECTRON DEVICE LETTERS
    31. Tokumitsu, E; Fujii, G; Ishiwara, H
      Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

      APPLIED PHYSICS LETTERS
    32. Yoon, SM; Tokumitsu, E; Ishiwara, H
      Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi2Ta2O9)/semiconductor field effect transistor (MFSFET)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Jimbo, T; Sano, H; Takahashi, Y; Funakubo, H; Tokumitsu, E; Ishiwara, H
      Preparation of SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using a double alcoholate source

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. ISHIWARA H
      SPECIAL ISSUE ON ADVANCED MEMORY DEVICES USING HIGH-DIELECTRIC-CONSTANT AND FERROELECTRIC THIN-FILMS - FOREWORD

      IEICE transactions on electronics
    35. KAMEI T; TOKUMITSU E; ISHIWARA H
      NUMERICAL-ANALYSIS OF METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS (MFS-FETS) CONSIDERING INHOMOGENEOUS FERROELECTRIC POLARIZATION

      IEICE transactions on electronics
    36. ISHIWARA H
      CURRENT STATUS AND PROSPECTS OF DIGITAL AND ANALOG MEMORIES USING MFSFETS

      Journal of the Korean Physical Society
    37. PARK BE; IMADA S; TOKUMITSU E; ISHIWARA H
      ANNEALING EFFECT OF THE CEO2 BUFFER LAYERS FOR PZT CEO2/SI(111) STRUCTURES/

      Journal of the Korean Physical Society
    38. AIZAWA K; OHTAKE S; TOKUMITSU E; ISHIWARA H
      C-V CHARACTERISTICS OF AL BAMGF4/SI(111) DIODES FABRICATED BY DRY-ETCHING PROCESS/

      Journal of the Korean Physical Society
    39. PARK BE; SHOURIKI S; TOKUMITSU E; ISHIWARA H
      FABRICATION OF PBZRXTI1-XO3 FILMS ON SI STRUCTURES USING Y2O3 BUFFER LAYERS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. YOON SM; KURITA Y; TOKUMITSU E; ISHIWARA H
      ELECTRICAL CHARACTERISTICS OF NEURON OSCILLATION CIRCUITS COMPOSED OFMOSFETS AND COMPLEMENTARY UNIJUNCTION TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. Imada, S; Shouriki, S; Tokumitsu, E; Ishiwara, H
      Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. YOON SM; TOKUMITSU E; ISHIWARA H
      ELECTRICAL-PROPERTIES OF LA0.7SR0.3COO3 PB(ZR0.52TI0.48)O-3/LA0.7SR0.3COO3 THIN-FILM CAPACITORS FORMED ON MGO SUBSTRATES USING THE SOL-GEL METHOD/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    43. ISHIWARA H
      CURRENT STATUS AND PROSPECTS OF MFSFETS AND RELATED DEVICES

      Integrated ferroelectrics
    44. TOKUMITSU E; SHIMAMURA T; ISHIWARA H
      ELECTRICAL-PROPERTIES OF FERROELECTRIC-CAPACITOR-GATE SI MOS-TRANSISTORS USING P(L)ZT FILMS

      Integrated ferroelectrics
    45. TOKUMITSU E; NAKAMURA R; ISHIWARA H
      NONVOLATILE MEMORY OPERATIONS OF METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) FETS USING PLZT STO/SI(100) STRUCTURES/

      IEEE electron device letters
    46. HAYASHI T; YOSHIHARA M; OHMI S; TOKUMITSU E; ISHIWARA H
      ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS GROWN ON GAAS SUBSTRATES USING ALGAAS BUFFER LAYER

      Applied surface science
    47. PARK BE; SAKAI I; TOKUMITSU E; ISHIWARA H
      HYSTERESIS CHARACTERISTICS OF VACUUM-EVAPORATED FERROELECTRIC PBZR0.4TI0.6O3 FILMS ON SI(111) SUBSTRATES USING CEO2 BUFFER LAYERS

      Applied surface science
    48. YOON SM; TOKUMITSU E; ISHIWARA H
      PREPARATION OF PBZRXTI1-XO3 LA1-XSRXCOO3 HETEROSTRUCTURES USING THE SOL-GEL METHOD AND THEIR ELECTRICAL-PROPERTIES/

      Applied surface science
    49. ISHIWARA H; AOYAMA Y; OKADA S; SHIMAMURA C; TOKUMITSU E
      FERROELECTRIC NEURON CIRCUITS WITH ADAPTIVE-LEARNING FUNCTION

      Computers & electrical engineering
    50. ISHIWARA H; SHIMAMURA T; TOKUMITSU E
      PROPOSAL OF A SINGLE-TRANSISTOR-CELL-TYPE FERROELECTRIC MEMORY USING AN SOI STRUCTURE AND EXPERIMENTAL-STUDY ON THE INTERFERENCE PROBLEM INTHE WRITE OPERATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    51. JIMBO T; ISHIWARA H
      X-RAY AND PHOTOLUMINESCENCE CHARACTERIZATION OF A STRAIN-FREE GAAS-ON-SI STRUCTURE FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    52. AIZAWA K; MORIWAKI M; ICHIKI T; TOKUMITSU E; ISHIWARA H
      GROWTH AND CRYSTALLINITY OF FERROELECTRIC BAMGF4 FILMS ON (111)-ORIENTED PT FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    53. HA H; MOON BK; HORIUCHI T; INUSHIMA T; ISHIWARA H; KOINUMA H
      STRUCTURE AND ELECTRIC PROPERTIES OF TIO2 FILMS PREPARED BY COLD-PLASMA TORCH UNDER ATMOSPHERIC-PRESSURE

      Materials science & engineering. B, Solid-state materials for advanced technology
    54. MOON BK; TOKUMITSU E; ISHIWARA H
      FORMATION OF HIGH-DIELECTRIC OXIDE-FILMS ON SRVO3-XSI SUBSTRATES

      Materials science & engineering. B, Solid-state materials for advanced technology
    55. TOKUMITSU E; NAKAMURA BI; ISHIWARA H
      FABRICATIONS OF FERROELECTRIC-GATE FIELD-EFFECT-TRANSISTORS USING P(L)ZT FILMS

      Journal of the Korean Physical Society
    56. HA HK; YOSHIMOTO M; KOINUMA H; MOON BK; ISHIWARA H
      OPEN-AIR PLASMA CHEMICAL-VAPOR-DEPOSITION OF HIGHLY DIELECTRIC AMORPHOUS TIO2 FILMS

      Applied physics letters
    57. SAKAI I; TOKUMITU E; ISHIWARA H
      PREPARATION AND CHARACTERIZATION OF PZT THIN-FILMS ON CEO2(111) SI(111) STRUCTURES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    58. OH JH; KIM CJ; ISHIWARA H
      ENHANCED GROWTH-MECHANISM IN LATERAL SOLID-PHASE EPITAXY OF SI FILMS SIMULTANEOUSLY DOPED WITH P AND GE ATOMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    59. OHMI S; YOSHIHARA M; OKAMOTO T; TOKUMITSU E; ISHIWARA H
      ELECTRICAL-PROPERTIES OF FERROELECTRIC GATE HEMT STRUCTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    60. AIZAWA K; ICHIKI T; OKAMOTO T; TOKUMITSU E; ISHIWARA H
      FERROELECTRIC PROPERTIES OF BAMGF4 FILMS GROWN ON SI(100), SI(111), AND PT(111) SIO2/SI(100) STRUCTURES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. KIM KH; KIM JD; ISHIWARA H
      PROPERTIES OF FERROELECTRIC BAMGF4 ON SI(100), SI(110) AND SI(111) SUBSTRATES OBTAINED BY POSTDEPOSITION RAPID THERMAL ANNEALING

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    62. TOKUMITSU E; UENO S; NAKAMURA RI; ISHIWARA H
      CHARACTERIZATION OF PB(ZRXTI1-X)O-3 FILMS PREPARED BY VACUUM EVAPORATION METHOD

      Integrated ferroelectrics
    63. TANISAKE N; ITANI K; KIM KH; TOKUMITSU E; ISHIWARA H
      STUDY ON GRADUAL REVERSAL OF POLARIZATION IN FERROELECTRIC PZT THIN-FILMS FOR ADAPTIVE-LEARNING MFSFET APPLICATIONS

      Integrated ferroelectrics
    64. MOON BK; ISHIWARA H
      HETEROEPITAXIAL GROWTH OF SRVO3-X AND SRTIO3 FILMS ON SI SUBSTRATES AND FORMATION OF LAYERED STRUCTURES

      Journal of the Korean Physical Society
    65. ISHIWARA H; HOSHINO T; KATAHAMA H
      FORMATION OF STRAIN-FREE GAAS-ON-SI STRUCTURES BY ANNEALING UNDER ULTRAHIGH PRESSURE

      Materials chemistry and physics
    66. OHMI SI; TOKUMITSU E; ISHIWARA H
      CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS GROWN ON ALGAAS GAAS(100) HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/

      Journal of crystal growth
    67. MOON BK; ISHIWARA H
      FORMATION AND ELECTRICAL-PROPERTIES OF HETEROEPITAXIAL SRTIO3 SRVO3-X/SI(100) STRUCTURES/

      Applied physics letters
    68. KIM KH; KIM JD; ISHIWARA H
      IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF METAL-FERROELECTRIC BAMGF4-SILICON CAPACITOR BY RAPID THERMAL ANNEALING

      Applied physics letters
    69. ISHIWARA H; HOSHINO T; KATAHAMA H
      CRYSTALLINE QUALITY OF STRAIN-FREE GAAS-ON-SI STRUCTURES FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE

      Applied physics letters
    70. TOKUMITSU E; ITANI K; MOON BK; ISHIWARA H
      CRYSTALLINE QUALITY AND ELECTRICAL-PROPERTIES OF PBZRXTI1-XO3 THIN-FILMS PREPARED ON SRTIO3-COVERED SI SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    71. LEE MB; KAWASAKI M; YOSHIMOTO M; MOON BK; ISHIWARA H; KOINUMA H
      FORMATION AND CHARACTERIZATION OF EPITAXIAL TIO2 AND BATIO3 TIO2 FILMS ON SI SUBSTRATE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. TOKUMITSU E; NAKAMURA R; ITANI K; ISHIWARA H
      FILM QUALITY DEPENDENCE OF ADAPTIVE-LEARNING PROCESSES IN NEURODEVICES USING FERROELECTRIC PBZRXTI1-XO3(PZT) FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. OH JH; KIM DY; ISHIWARA H
      STRESS-INDUCED ANOMALOUS GROWTH IN LATERAL SOLID-PHASE EPITAXY OF GE-INCORPORATED SI FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. OHMI S; TOKUMITSU E; ISHIWARA H
      CONTACTLESS MEASUREMENT OF ELECTRON-MOBILITY IN FERROELECTRIC GATE HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    75. AIZAWA K; ISHIWARA H
      ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS ON SI SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. TOKUMITSU E; TANISAKE N; ISHIWARA H
      PARTIAL SWITCHING KINETICS OF FERROELECTRIC PBZRXTI1-XO3 THIN-FILMS PREPARED BY SOL-GEL TECHNIQUE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    77. MOON BK; ISHIWARA H
      ROLES OF BUFFER LAYERS IN EPITAXIAL-GROWTH OF SRTIO(3) FILMS ON SILICON SUBSTRATES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    78. MOON BK; ISHIWARA H
      GROWTH OF CRYSTALLINE SRTIO3 FILMS ON SI SUBSTRATES USING THIN FLUORIDE BUFFER LAYERS AND THEIR ELECTRICAL-PROPERTIES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    79. AIZAWA K; ISHIWARA H; KUMAGAI M
      EPITAXIAL-GROWTH OF BAMGF4 FILMS ON SI(100) AND (111) SUBSTRATES - ANAPPROACH TO FERROELECTRIC SEMICONDUCTOR HETEROSTRUCTURES

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/05/20 alle ore 04:26:13