Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' Houston, PA' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 21 riferimenti
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    1. Wells, T; Houston, PA
      Skeletal growth acceleration with growth hormone secretagogues in transgenic growth retarded rats: Pattern-dependent effects and mechanisms of desensitization

      JOURNAL OF NEUROENDOCRINOLOGY
    2. Larkin, IA; Jefferson, JH; Larkin, VV; Houston, PA; Hill, G
      Field-induced charge accumulation in V-groove quantum wires

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    3. Shephard, JD; Furniss, D; Houston, PA; Seddon, AB
      Fabrication of mid-infrared planar waveguides from compatible fluorozirconate glass pairs, via hot spin-casting

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    4. Houston, PA
      High-frequency heterojunction bipolar transistor device design and technology

      ELECTRONICS & COMMUNICATION ENGINEERING JOURNAL
    5. Percival, C; Houston, PA; Woodhead, J; Al-Khafaji, M; Hill, G; Roberts, JS; Knights, AP
      GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    6. Percival, C; Woodhead, J; Houston, PA; Cullis, AG; Hill, G; Roberts, JS
      Polarization effects in near-ground-state quantum wire lasers

      APPLIED PHYSICS LETTERS
    7. YOW HK; HOUSTON PA; BUTTON CC; DAVID JPR; NG CMS
      EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

      Journal of electronic materials
    8. LYE BC; HOUSTON PA; BUTTON CC; DAVID JPR
      ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS

      Solid-state electronics
    9. FLITCROFT RM; DAVID JPR; HOUSTON PA; BUTTON CC
      AVALANCHE MULTIPLICATION IN GAINP GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/

      I.E.E.E. transactions on electron devices
    10. LYE BC; HOUSTON PA; YOW HK; BUTTON CC
      GAINP ALGAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ZERO CONDUCTION-BAND SPIKE AT THE COLLECTOR/

      I.E.E.E. transactions on electron devices
    11. NG CMS; HOUSTON PA; YOW HK
      ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF CURRENT GAIN IN HETEROJUNCTION BIPOLAR-TRANSISTORS

      I.E.E.E. transactions on electron devices
    12. PLIMMER SA; DAVID JPR; HERBERT DC; LEE TW; REES GJ; HOUSTON PA; GREY R; ROBSON PN; HIGGS AW; WIGHT DR
      INVESTIGATION OF IMPACT IONIZATION IN THIN GAAS DIODES

      I.E.E.E. transactions on electron devices
    13. YOW HK; HOUSTON PA; NG CMS; BUTTON C; ROBERTS JS
      HIGH-TEMPERATURE DC CHARACTERISTICS OF ALXGA0.52-XIN0.48P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/

      I.E.E.E. transactions on electron devices
    14. LYE BC; YOW HK; HOUSTON PA; BUTTON CC
      ELECTRON-MOBILITY ENHANCEMENT IN HEAVILY-DOPED GAAS-C HETEROJUNCTION BIPOLAR-TRANSISTORS

      Electronics Letters
    15. HITCHENS LJ; HOUSTON PA; HOPKINSON M; REES GJ
      ENHANCED MOBILITY PIEZOELECTRIC ALINAS INGAAS QUANTUM-WELL STRUCTURESON (111)B INP SUBSTRATES/

      Electronics Letters
    16. YOW HK; HOUSTON PA; HOPKINSON M
      CONDUCTION-BAND DISCONTINUITIES IN GA0.5IN0.5P-ALXGA0.5-XIN0.5P HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION

      Applied physics letters
    17. HOUSTON PA; YANG YF; JOHNSON MR; HOPKINSON M
      MAGNETIC-FIELD EFFECTS ON INP INGAAS QUASI-BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS

      Semiconductor science and technology
    18. YOW HK; HOUSTON PA; BUTTON CC; LEE TW; ROBERTS JS
      HETEROJUNCTION BIPOLAR-TRANSISTORS IN ALGAINP GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

      Journal of applied physics
    19. YOW HK; LEE TW; HOUSTON PA; LEE HY; BUTTON CC; ROBERTS JS
      DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAINP GAAS/GAINP/

      Electronics Letters
    20. LEE TW; HOUSTON PA
      GENERALIZED ANALYTICAL TRANSPORT MODELING OF THE DC CHARACTERISTICS OF HETEROJUNCTION BIPOLAR-TRANSISTORS

      I.E.E.E. transactions on electron devices
    21. LEE TW; HOUSTON PA; KUMAR R; HILL G; HOPKINSON M
      ASYMMETRIC CHARACTERISTICS OF INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/

      Semiconductor science and technology


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Documento generato il 31/10/20 alle ore 20:35:38