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1. Helen, Y; Dassow, R; Nerding, M; Mourgues, K; Raoult, F; Kohler, JR; Mohammed-Brahim, T; Rogel, R; Bonnaud, O; Werner, JH; Strunk, HP
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   Y. Helen et al., "High mobility thin film transistors by Nd : YVO4-laser crystallization", THIN SOL FI, 383(1-2), 2001, pp. 143-146
2. Toutah, H; Tala-Ighil, B; Llibre, JF; Rahal, A; Mourgues, K; Helen, Y; Brahim, TM; Dassow, R; Kohler, JR
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   H. Toutah et al., "Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material", THIN SOL FI, 383(1-2), 2001, pp. 299-302
3. Toutah, H; Llibre, JF; Tala-Ighil, B; Mohammed-Brahim, T; Helen, Y; Gautier, G; Bonnaud, O
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   H. Toutah et al., "Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating", MICROEL REL, 41(9-10), 2001, pp. 1325-1329
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   R. Dassow et al., "Laser crystallization of silicon for high-performance thin-film transistors", SEMIC SCI T, 15(10), 2000, pp. L31-L34
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   H. Toutah et al., "Stability of polysilicon thin film transistors under switch operating", MICROEL REL, 40(8-10), 2000, pp. 1573-1577
6. Pichon, L; Mercha, A; Carin, R; Bonnaud, O; Mohammed-Brahim, T; Helen, Y; Rogel, R
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   L. Pichon et al., "Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors", APPL PHYS L, 77(4), 2000, pp. 576-578
7. Helen, Y; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Bonnaud, O; Rogel, R; Prochasson, S; Boher, P; Zahorski, D
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8. Rahal, A; Mohammed-Brahim, T; Toutah, H; Tala-Ighil, B; Helen, Y; Prat, C; Raoult, F
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