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    1. Harmand, JC; Ungaro, G; Ramos, J; Rao, EVK; Saint-Girons, G; Teissier, R; Le Roux, G; Largeau, L; Patriarche, G
      Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission

      JOURNAL OF CRYSTAL GROWTH
    2. Teissier, R; Sicault, D; Harmand, JC; Ungaro, G; Le Roux, G; Largeau, L
      Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

      JOURNAL OF APPLIED PHYSICS
    3. Mangeney, J; Choumane, H; Patriarche, G; Leroux, G; Aubin, G; Harmand, JC; Oudar, JL; Bernas, H
      Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers

      APPLIED PHYSICS LETTERS
    4. Dias, IFL; Duarte, JL; Laureto, E; Gelamo, RV; Menezes, EA; Harmand, JC
      Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

      SUPERLATTICES AND MICROSTRUCTURES
    5. Patriarche, G; Meriadec, C; LeRoux, G; Deparis, C; Sagnes, I; Harmand, JC; Glas, F
      GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth

      APPLIED SURFACE SCIENCE
    6. Mangeney, J; Aubin, G; Oudar, JL; Harmand, JC; Patriarche, G; Choumane, H; Stelmakh, N; Lourtioz, JM
      All-optical discrimination at 1.5 mu m using ultrafast saturable absorber vertical cavity device

      ELECTRONICS LETTERS
    7. Harmand, JC; Ungaro, G; Largeau, L; Le Roux, G
      Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

      APPLIED PHYSICS LETTERS
    8. Mangeney, J; Oudar, JL; Harmand, JC; Meriadec, C; Patriarche, G; Aubin, G; Stelmakh, N; Lourtioz, JM
      Ultrafast saturable absorption at 1.55 mu m in heavy-ion-irradiated quantum-well vertical cavity

      APPLIED PHYSICS LETTERS
    9. Krebs, O; Voisin, P; Rondi, D; Gentner, JL; Goldstein, L; Harmand, JC
      The quantum confined Pockels effect in InGaAs-based multi-quantum wells

      JOURNAL DE PHYSIQUE IV
    10. Palmier, JF; Minot, C; Harmand, JC; Sibille, A; Tanguy, D; Penard, E
      Recent results on superlattice transport and optoelectronics applications

      SUPERLATTICES AND MICROSTRUCTURES
    11. Aristone, F; Portal, JC; Palmier, JF; Harmand, JC
      Shubnikov-de Haas - Like oscillations in the vertical transport of semiconductor superlattices

      BRAZILIAN JOURNAL OF PHYSICS
    12. Harmand, JC; Ungaro, G; Sagnes, I; Debray, JP; Sermage, B; Rivera, T; Meriadec, C; Oudar, JL; Raj, R; Olivier-martin, F; Kazmierski, C; Madani, R
      Room temperature continuous wave operation under optical pumping of a 1.48mu m vertical cavity laser based on AlGaAsSb mirror

      JOURNAL OF CRYSTAL GROWTH
    13. Laureto, E; Dias, IFL; Duarte, JL; Di Mauro, E; Iwamoto, H; Freitas, MTP; Lourenco, SA; Toginho, DO; Harmand, JC
      Investigation of optical properties of interfaces between heavily doped Al-0.48 In0.52As : Si and InP (Fe) substrates by photoreflectance analysis

      JOURNAL OF APPLIED PHYSICS
    14. Ungaro, G; Le Roux, G; Teissier, R; Harmand, JC
      GaAsSbN: a new low-bandgap material for GaAs substrates

      ELECTRONICS LETTERS
    15. DIAS IFL; NABET B; KOHL A; BENCHIMOL JL; HARMAND JC
      ELECTRICAL AND OPTICAL CHARACTERISTICS OF N-TYPE-DOPED DISTRIBUTED BRAGG MIRRORS ON INP

      IEEE photonics technology letters
    16. TRONC P; WANG G; REID B; MACIEJKO R; HARMAND JC; PALMIER JF; SERMAGE B; ROUSSIGNOL P
      TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF GAINAS ALGAINAS SUPERLATTICES/

      Superlattices and microstructures
    17. MINOT C; SAHRI N; LEPERSON H; PALMIER JF; HARMAND JC; MEDUS JP; ESNAULT JC
      MILLIMETER-WAVE NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAINAS ALINAS SEMICONDUCTOR SUPERLATTICES/

      Superlattices and microstructures
    18. GUETTLER T; TRIQUES ALC; VERVOORT L; FERREIRA R; ROUSSIGNOL P; VOISIN P; RONDI D; HARMAND JC
      OPTICAL POLARIZATION RELAXATION IN INXGA1-XAS-BASED QUANTUM-WELLS - EVIDENCE OF THE INTERFACE SYMMETRY-REDUCTION EFFECT

      Physical review. B, Condensed matter
    19. SYRBU AV; IAKOVLEV VP; BERSETH CA; DEHAESE O; RUDRA A; KAPON E; JACQUET J; BOUCART J; STARK C; GABORIT F; SAGNES I; HARMAND JC; RAJ R
      30-DEGREES-C CW OPERATION OF 0.52-MU-M INGAASP ALGAAS VERTICAL-CAVITYLASERS WITH IN-SITU BUILT-IN LATERAL CURRENT CONFINEMENT BY LOCALIZEDFUSION/

      Electronics Letters
    20. UNGARO G; HARMAND JC; SAGNES I; SERMAGE B; DEBRAY JP; MERIADEC C; RIVERA T; OUDAR JL; RAJ R
      ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION VCSEL AT 1.48-MU-M WITH SB-BASED BRAGG REFLECTOR

      Electronics Letters
    21. Simonneau, C; Harmand, JC; Vidakovic, P; Levenson, JA
      Generation of the second harmonic in a doubly resonant AlAs/GaAlAs vertical microcavity

      ANNALES DE PHYSIQUE
    22. Syrbu, AV; Iakovlev, VP; Berseth, CA; Dehaese, O; Rudra, A; Kapon, E; Stark, C; Boucart, J; Gaborit, F; Jacquet, J; Sagnes, I; Harmand, JC; Raj, R
      Quasi-CW room temperature operation of 1.52 mu m InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. HARMAND JC; IDIARTALHOR E; MOISON JM; BARTHE F
      IMPROVED REPRODUCIBILITY OF ALGAINAS LASER THRESHOLD BY INP SUBSTRATEDEOXIDATION UNDER PHOSPHORUS FLUX

      Journal of electronic materials
    24. GUETTLER T; KREBS O; DIAS IL; HARMAND JC; DEVAUX F; VOISIN P
      POTENTIAL-INSERTED INGAAS-ALGAINAS SHALLOW QUANTUM-WELLS FOR ELECTROOPTICAL MODULATION AT 1.55 MU-M

      Semiconductor science and technology
    25. SEIDEL W; KREBS O; VOISIN P; HARMAND JC; ARISTONE F; PALMIER JF
      BAND DISCONTINUITIES IN INXGA1-XAS-INP AND INP-ALYIN1-YAS HETEROSTRUCTURES - EVIDENCE OF NONCOMMUTATIVITY

      Physical review. B, Condensed matter
    26. SIMONNEAU C; DEBRAY JP; HARMAND JC; VIDAKOVIC P; LOVERING DJ; LEVENSON JA
      2ND-HARMONIC GENERATION IN A DOUBLY RESONANT SEMICONDUCTOR MICROCAVITY

      Optics letters
    27. BERTHELEMOT C; VIGIER P; DUMAS JM; HARMAND JC
      IMPACT OF INP HEMT EPILAYER DESIGNS ON SIDE GATING EFFECTS

      Microelectronics and reliability
    28. HARMAND JC; KOHL A; JUHEL H; LEROUX G
      MOLECULAR-BEAM EPITAXY OF ALGAASSB SYSTEM FOR 1.55 MU-M BRAGG MIRRORS

      Journal of crystal growth
    29. KOHL A; HARMAND JC; OUDAR JL; RAO EVK; KUSZELEWICZ R; DELPON EL
      ALGAASSB ALASSB MICROCAVITY DESIGNED FOR 1.55-MU-M AND GROWN BY MOLECULAR-BEAM EPITAXY/

      Electronics Letters
    30. DIAS IFL; NABET B; KOHL A; HARMAND JC
      HIGH REFLECTIVITY, LOW-RESISTANCE TE DOPED ALGAASSB ALASSB BRAGG MIRROR/

      Electronics Letters
    31. DEVAUX F; HARMAND JC; DIAS IFL; GUETTLER T; KREBS O; VOISIN P
      HIGH-POWER SATURATION, POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR WITH SPIKED SHALLOW WELLS

      Electronics Letters
    32. ACHOUCHE M; CLEI A; HARMAND JC
      CHARACTERIZATION OF ELECTRICAL DAMAGE-INDUCED BY CH4 H-2 REACTIVE IONETCHING OF MOLECULAR-BEAM EPITAXIAL INALAS/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    33. SIK H; DRIAD R; LEGAY P; JUHEL M; HARMAND JC; LAUNAY P; ALEXANDRE F
      (NH4)(2)S-X PREEPITAXIAL TREATMENT FOR GAAS CHEMICAL BEAM EPITAXY REGROWTH

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    34. BERTHELEMOT C; FARRENQ A; VIGIER P; DUMAS JM; CLEI A; PALLA R; HARMAND JC
      A STUDY OF SIDE GATE TEST STRUCTURES IN INALAS INGAAS HEMTS FOR OPTOELECTRONIC CIRCUIT APPLICATIONS/

      Quality and reliability engineering international
    35. GASSOT P; DMOWSKI L; EREMETS M; ARISTONE F; GOUTIERS B; GAUFFIER JL; MAUDE DK; PALMIER JF; PORTAL JC; HARMAND JC; MOLLOT F
      SHORT-PERIOD SUPERLATTICES UNDER HYDROSTATIC-PRESSURE

      Solid-state electronics
    36. COUTURIER J; HARMAND JC; VOISIN P
      INVESTIGATION OF LOW-POWER ALL-OPTICAL BISTABILITY IN AN INGAAS-INALAS SUPERLATTICE

      Solid-state electronics
    37. PALMIER JF; MINOT C; LEPERSON H; HARMAND JC; BOUADMA N; ESNAULT JC; ARQUEY D; HELIOT F; MEDUS JP
      REFLECTION GAIN UP TO 6 DB AT 65 GHZ IN GAINAS ALINAS SUPERLATTICE OSCILLATORS/

      Electronics Letters
    38. DEVAUX F; HARMAND JC; BOUADMA N; CARRE M
      PROPOSAL AND DEMONSTRATION OF A SYMMETRICAL NPIPN ELECTROABSORPTION MODULATOR

      IEEE photonics technology letters
    39. ALLOVON M; FOUCHET S; HARMAND JC; OUGAZZADEN A; ROSE B; GLOUKHIAN A; DEVAUX F
      MONOLITHIC INTEGRATION ON INP OF A WANNIER-STARK MODULATOR WITH A STRAINED MQW DFB 1.55-MU-M LASER

      IEEE photonics technology letters
    40. WANG G; DEMORY R; TRONC P; DEPEYROT J; MELLITI R; HARMAND JC; PALMIER JF; KOCHERESHKO VP; PLATONOV AV
      OBSERVATION OF THE WANNIER-STARK LADDERS ASSOCIATED TO THE LIGHT-HOLEGROUND-STATE AND TO THE HEAVY-HOLE FIRST EXCITED-STATE IN GAINAS ALGAINAS SUPERLATTICES/

      Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics
    41. DEVAUX F; CHELLES S; OUGAZZADEN A; MIRCEA A; HARMAND JC
      ELECTROABSORPTION MODULATORS FOR HIGH-BIT-RATE OPTICAL COMMUNICATIONS- COMPARISON OF STRAINED INGAAS INALAS AND INGAASP/INGAASP/

      Semiconductor science and technology
    42. COUTURIER J; HARMAND JC; VOISIN P
      INVESTIGATION OF LOW-POWER ALL-OPTICAL BISTABILITY IN AN INGAAS-INALAS SUPERLATTICE

      Semiconductor science and technology
    43. HARMAND JC; PRASEUTH JP; IDIARTALHOR E; PALLA R; PELOUARD JL; QUILLEC M
      CONTINUOUS MOLECULAR-BEAM EPITAXY OF ARSENIDES AND PHOSPHIDES APPLIEDTO DEVICE STRUCTURES ON INP SUBSTRATES

      Journal of crystal growth
    44. LEGAY P; ALEXANDRE F; BENCHIMOL JL; HARMAND JC
      DEPENDENCE OF INP AND GAAS CHEMICAL BEAM EPITAXY GROWTH-RATE ON SUBSTRATE ORIENTATIONS - APPLICATIONS TO SELECTIVE-AREA EPITAXY

      Journal of crystal growth
    45. HARMAND JC; JEANNES F; LEROUX G; JUHEL M
      ALASSB ALGAASSB BRAGG STACKS FOR 1.55-MU-M WAVELENGTH GROWN BY MOLECULAR-BEAM EPITAXY/

      Electronics Letters
    46. CHELLES S; FERREIRA R; VOISIN P; HARMAND JC
      HIGH-PERFORMANCE POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATORBASED ON STRAINED GAINAS-ALINAS MULTIPLE-QUANTUM WELLS

      Applied physics letters
    47. WANG G; TRONC P; DEPEYROT J; HARMAND JC; PALMIER JF; KOCHERESHKO VP
      OBSERVATION OF WANNIER-STARK LADDERS IN GAINAS-ALGAINAS SEMICONDUCTORSUPERLATTICES

      Superlattices and microstructures
    48. PALMIER JF; HARMAND JC; MINOT C; LEPERSON H; DUTISSEUIL E; WANG H; LEROUX G
      MICROWAVE MINIBAND NDC IN GAINAS ALINAS SUPERLATTICES/

      Solid-state electronics
    49. CADIOU JF; GUENA J; PENARD E; LEGAUD P; MINOT C; PALMIER JF; LEPERSON H; HARMAND JC
      DIRECT OPTICAL-INJECTION LOCKING OF 20-GHZ SUPERLATTICE OSCILLATORS

      Electronics Letters
    50. COUTURIER J; VOISIN P; HARMAND JC
      LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE OPERATINGAT 1.5 MU-M

      Applied physics letters
    51. COUTURIER J; HARMAND JC; VOISIN P
      LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE

      Journal de physique. IV
    52. WANG G; TRONC P; DEPEYROT J; HARMAND JC; PALMIER JF
      OPTICALLY INDUCED EXCITONIC DISTRIBUTION IN GAINAS-ALGAINAS SEMICONDUCTOR SUPERLATTICES UNDER AN ELECTRIC-FIELD

      Journal de physique. IV
    53. CHATILLON C; HARMAND JC; ALEXANDRE F
      THERMODYNAMIC ANALYSIS OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY AT THE SURFACE-STRUCTURE TRANSITION FROM 3X1 TO 4X2

      Journal of crystal growth
    54. SYLVESTRE A; CROZAT P; ADDE R; DELUSTRAC A; JIN Y; HARMAND JC; QUILLEC M
      CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/

      Electronics Letters
    55. HARMAND JC; JUHEL M
      DETERMINATION OF OXYGEN AND CARBON CONTAMINATIONS IN INGAAS MOLECULAR-BEAM EPITAXY USING GROWTH INTERRUPTIONS

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/08/20 alle ore 01:52:11