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    1. Hess, K; Haggag, A; McMahon, W; Cheng, K; Lee, J; Lyding, J
      The physics of determining chip reliability

      IEEE CIRCUITS & DEVICES
    2. Kunschner, LJ; Kuttesch, J; Hess, K; Yung, WKA
      Survival and recurrence factors in adult medulloblastoma: The M.D. Anderson Cancer Center experience from 1978 to 1998

      NEURO-ONCOLOGY
    3. Cheng, KG; Lee, JJ; Chen, Z; Shah, SA; Hess, K; Leburton, JP; Lyding, JW
      Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    4. Cheng, KG; Hess, K; Lyding, JW
      Deuterium passivation of interface traps in MOS devices

      IEEE ELECTRON DEVICE LETTERS
    5. Cheng, K; Hess, K; Lyding, JW
      A new technique to quantify deuterium passivation of interface traps in MOS devices

      IEEE ELECTRON DEVICE LETTERS
    6. Jung, HH; Hergersberg, M; Kneifel, S; Alkadhi, H; Schiess, R; Weigell-Weber, M; Daniels, G; Kollias, S; Hess, K
      McLeod syndrome: A novel mutation, predominant psychiatric manifestations,and distinct striatal imaging findings

      ANNALS OF NEUROLOGY
    7. Cheng, KG; Lee, J; Chen, Z; Shah, S; Hess, K; Lyding, JW; Kim, YK; Kim, YW; Suh, KP
      Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices

      MICROELECTRONIC ENGINEERING
    8. Blattler, T; Siegel, AM; Jochum, W; Aguzzi, A; Hess, K
      Primary cerebral amyloidoma

      NEUROLOGY
    9. Buttner, U; Chofflon, M; Hess, K; Kappos, L; Kesselring, J; Ludin, HP; Schluep, M; Vaney, C; Baumhackl, U; Berger, T; Deisenhammer, F; Freimuller, M; Hartung, HP; Kollegger, H; Kristoferitsch, W; Lassmann, H; Markut, H; Vass, K; Altenkirch, H; Boese, J; Gass, A; Gehlen, W; Goebels, N; Haas, J; Haferkamp, G; Heidenreich, F; Heitmann, R; Hemmer, B; Hohlfeld, R; Janzen, RWC; Jugelt, E; Kolmel, W; Konig, N; Kowitzsch, K; Manegold, U; Melms, A; Mertin, J; Petereit, HF; Pette, M; Pohlau, D; Poser, S; Sailer, M; Schmidt, S; Schock, G; Schulz, M; Seidel, D; Stangel, M; Stark, E; Stoll, G; Weinrich, W; Wietholter, H; Zettl, UK; Zipp, F; Zschenderlein, R; Bayas, A; Chan, A; Flachenecker, P; Gold, R; Grauer, O; Jung, S; Kallmann, B; Leussink, V; Maurer, M; Rieckmann, P; Toyka, KV; Weilbach, FX
      Escalating immunomodulatory therapy of multiple sclerosis - 1. Supplement

      NERVENARZT
    10. Hess, K; Philipp, W
      A possible loophole in the theorem of Bell

      PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
    11. Hess, K; Philipp, W
      Bell's theorem and the problem of decidability between the views of Einstein and Bohr

      PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
    12. Dupont, N; Hess, K
      Hochschild cohomology is topological

      JOURNAL OF PURE AND APPLIED ALGEBRA
    13. Lacroix, M; Abi-Said, D; Fourney, DR; Gokaslan, ZL; Shi, WM; DeMonte, F; Lang, FF; McCutcheon, IE; Hassenbusch, SJ; Holland, E; Hess, K; Michael, C; Miller, D; Sawaya, R
      A multivariate analysis of 416 patients with glioblastoma multiforme: prognosis, extent of resection, and survival

      JOURNAL OF NEUROSURGERY
    14. Cheng, KG; Hess, K; Lyding, JW
      Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

      JOURNAL OF APPLIED PHYSICS
    15. Stadele, M; Tuttle, BR; Hess, K
      Tunneling through ultrathin SiO2 gate oxides from microscopic models

      JOURNAL OF APPLIED PHYSICS
    16. Chen, Z; Chen, KG; Lee, JJ; Lyding, JW; Hess, K; Chetlur, S
      Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    17. Quay, R; Hess, K; Reuter, R; Schlechtweg, M; Grave, T; Palankovski, V; Selberherr, S
      Nonlinear electronic transport and device performance of HEMTs

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    18. Blum, MW; Siegel, AM; Meier, R; Hess, K
      Neuroleptic malignant-like syndrome and acute hepatitis during tolcapone and clozapine medication

      EUROPEAN NEUROLOGY
    19. Kozuch, P; Hoff, PM; Hess, K; Adams, J; Newman, RA; Lee, F; Pazdur, R
      Phase I bioequivalency study of MitoExtra and mitomycin C in patients withsolid tumors

      CANCER
    20. Cheng, K; Leburton, JP; Hess, K; Lyding, JW
      On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors

      APPLIED PHYSICS LETTERS
    21. Cheng, KG; Lee, JJ; Hess, K; Lyding, JW
      Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect

      APPLIED PHYSICS LETTERS
    22. Benderdour, M; Van Bui, T; Hess, K; Dicko, A; Belleville, F; Dousset, B
      Effects of boron derivatives on extracellular matrix formation

      JOURNAL OF TRACE ELEMENTS IN MEDICINE AND BIOLOGY
    23. Alif, N; Hess, K; Straczek, J; Sebbar, S; Belahsen, Y; Mouane, N; Abkari, A; Nabet, P; Gelot, MA
      Mucopolysaccharidosis type I in Morocco: clinicals features and genetic profile

      ARCHIVES DE PEDIATRIE
    24. Stadele, M; Fischer, B; Tuttle, BR; Hess, K
      Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models

      SUPERLATTICES AND MICROSTRUCTURES
    25. Stadele, M; Tuttle, BR; Hess, K; Register, LF
      Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides

      SUPERLATTICES AND MICROSTRUCTURES
    26. Ipatova, IP; Chikalova-Luzina, OP; Hess, K
      Anharmonic linewidth of absorption by localized vibrations of H and D adatoms on the surface of Si

      SUPERLATTICES AND MICROSTRUCTURES
    27. Tuttle, BR; Hess, K; Register, LF
      Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

      SUPERLATTICES AND MICROSTRUCTURES
    28. Tuttle, BR; McMahon, W; Hess, K
      Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface ofmetal-oxide-semiconductor field effect transistors

      SUPERLATTICES AND MICROSTRUCTURES
    29. Lee, JJ; Cheng, KG; Chen, Z; Hess, K; Lyding, JW; Kim, YK; Lee, HS; Kim, YW; Suh, KP
      Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

      IEEE ELECTRON DEVICE LETTERS
    30. Chen, Z; Hess, K; Lee, JJ; Lyding, JW; Rosenbaum, E; Kizilyalli, I; Chetlur, S; Huang, R
      On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

      IEEE ELECTRON DEVICE LETTERS
    31. Jung, HH; Baumgartner, RW; Hess, K
      Symptomatic secondary hemorrhagic transformation of ischemic Wallenberg's syndrome

      JOURNAL OF NEUROLOGY
    32. Gardemann, A; Philipp, M; Hess, K; Katz, N; Tillmanns, H; Haberbosch, W
      The paraoxonase Leu-Met54 and Gln-Arg191 gene polymorphisms are not associated with the risk of coronary heart disease

      ATHEROSCLEROSIS
    33. Stadele, M; Hess, K
      Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells

      JOURNAL OF APPLIED PHYSICS
    34. Register, LF; Hess, K
      Improved algorithm for modeling collision broadening through a sequence ofscattering events in semiclassical Monte Carlo

      JOURNAL OF APPLIED PHYSICS
    35. Kolisch, R; Hess, K
      Efficient methods for scheduling make-to-order assemblies under resource, assembly area and part availability constraints

      INTERNATIONAL JOURNAL OF PRODUCTION RESEARCH
    36. Haggag, A; Hess, K
      Analytical theory of semiconductor P-N junctions and the transition between depletion and quasineutral region

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    37. Lundstrom, M; Dutton, RW; Ferry, DK; Hess, K
      Special issue on computational electronics: New challenges and directions - Foreword

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    38. Wiesli, P; Hess, K; Cathomas, G; Stey, C
      Neurosarcoidosis presenting as cerebellar mass

      EUROPEAN NEUROLOGY
    39. Ipatova, IP; Chikalova-Luzina, OP; Hess, K
      Effect of local vibrations on the H and D atom densities at a Si surface

      SEMICONDUCTORS
    40. Rhee, CH; Hess, K; Jabbur, J; Ruiz, M; Yang, Y; Chen, S; Chenchik, A; Fuller, GN; Zhang, W
      cDNA expression array reveals heterogeneous gene expression profiles in three glioblastoma cell lines

      ONCOGENE
    41. Simmen, D; Briner, HR; Hess, K
      Screening of olfaction with smell disks (vol 78, pg 125, 1999)

      LARYNGO-RHINO-OTOLOGIE
    42. Simmen, D; Briner, HR; Hess, K
      Screening of olfaction with smell disks

      LARYNGO-RHINO-OTOLOGIE
    43. Hess, K; Register, LF; McMahon, W; Tuttle, B; Aktas, O; Ravaioli, U; Lyding, JW; Kizilyalli, IC
      Theory of channel hot-carrier degradation in MOSFETs

      PHYSICA B
    44. Ferry, DK; Hess, K
      Energy loss to bound hydrogen at the Si surface

      PHYSICA B
    45. Ferry, DK; Goodnick, SM; Hess, K
      Energy exchange in single-particle electron-electron scattering

      PHYSICA B
    46. Ipatova, IP; Chikalova-Luzina, OP; Hess, K
      Isotope effect in the equilibrium between the silicon surface and the gas phase of hydrogen or deuterium

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    47. Groves, MD; Maor, MH; Meyers, C; Kyritsis, AP; Jaeckle, KA; Yung, WKA; Sawaya, RE; Hess, K; Bruner, JM; Peterson, P; Levin, VA
      A phase II trial of high-dose bromodeoxyuridine with accelerated fractionation radiotherapy followed by procarbazine, lomustine, and vincristine for glioblastoma multiforme

      INTERNATIONAL JOURNAL OF RADIATION ONCOLOGY BIOLOGY PHYSICS
    48. Ipatova, IP; Chikalova-Luzina, OP; Hess, K
      On the equilibrium between the Si surface and the H-2 or D-2 gas phase

      PHYSICS OF LOW-DIMENSIONAL STRUCTURES
    49. Richie, DA; Hess, K
      Wavelet based electronic structure calculations

      MICROELECTRONIC ENGINEERING
    50. Register, LF; Hess, K
      Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo

      MICROELECTRONIC ENGINEERING
    51. Buttner, U; Chofflon, M; Hess, K; Kappos, L; Kesselring, J; Ludin, H; Rihs, F; Schluep, M; Vaney, C; Baumhackl, U; Berger, T; Freimuller, O; Hartung, HP; Kollegger, W; Kristoferitsch, W; Vass, K; Lassmann, H; Markut, S; Altenkirch, H; Boese, J; Gehlen, W; Goebels, N; Gold, R; Haas, J; Haferkamp, G; Heidenreic, F; Heitmann, R; Hohlfeld, R; Jugelt, E; Kolmel, H; Konig, N; Lowitzsch, K; Manegold, U; Mertin, J; Pette, M; Poser, S; Sailer, J; Schack, G; Schulz, M; Seidel, D; Stark, E; Stoll, G; Weinrich, W; Wietholter, H; Zettl, U; Zipp, F; Zschenderlein, R; Rieckmann, P; Toyka, KV; Chan, A; Bayas, A; Maurer, M; Jung, S; Gold, R; Weilbach, F; Cursiefen, S; Flachenecker, P; Rieckmann, P
      Escalating immunomodulatory therapy of multiple sclerosis

      NERVENARZT
    52. Dupont, N; Hess, K
      Noncommutative algebraic models for fiber squares

      MATHEMATISCHE ANNALEN
    53. Dupont, N; Hess, K
      How to model the free loop space algebraically

      MATHEMATISCHE ANNALEN
    54. Hess, K; Lee, JJ; Chen, Z; Lyding, JW; Kim, YK; Kim, BS; Lee, YH; Kim, YW; Suh, KP
      An alternative interpretation of hot electron interface degradation in NMOSFETs: Isotope results irreconcilable with major defect generation by holes?

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    55. Lee, J; Epstein, Y; Berti, AC; Huber, J; Hess, K; Lyding, JW
      The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    56. Laux, SE; Hess, K
      Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    57. Keating, T; Jin, X; Chuang, SL; Hess, K
      Temperature dependence of electrical and optical modulation responses of quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    58. Hess, K; Tuttle, B; Register, F; Ferry, DK
      Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption

      APPLIED PHYSICS LETTERS
    59. Alif, N; Hess, K; Straczek, J; Sebbar, S; N'Bou, A; Nabet, P; Dousset, B
      Mucopolysaccharidosis type I: characterization of a common mutation that causes Hurler syndrome in Moroccan subjects

      ANNALS OF HUMAN GENETICS
    60. Witzigmann, B; Oyafuso, F; Hess, K
      Quasi-three-dimensional simulation of carrier dynamics in quantum well DFBlasers

      IEE PROCEEDINGS-OPTOELECTRONICS
    61. KLEIN B; REGISTER LF; GRUPEN M; HESS K
      NUMERICAL-SIMULATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS

      OPTICS EXPRESS
    62. RAVAIOLI U; DUNCAN A; PACELLI A; WORDELMAN C; HESS K
      HIERARCHY OF FULL BAND-STRUCTURE MODELS FOR MONTE-CARLO SIMULATION

      VLSI design (Print)
    63. JAKUMEIT J; RAVAIOLI U; HESS K
      NEW APPROACH TO HOT-ELECTRON EFFECTS IN SI-MOSFETS BASED ON AN EVOLUTIONARY ALGORITHM USING A MONTE-CARLO LIKE MUTATION OPERATOR

      VLSI design (Print)
    64. MACUCCI M; HESS K
      CORRECTIONS TO THE CAPACITANCE BETWEEN 2 ELECTRODES DUE TO THE PRESENCE OF QUANTUM-CONFINED SYSTEM

      VLSI design (Print)
    65. GRUPEN M; HESS K
      THE COUPLED OPTOELECTRONIC PROBLEMS OF QUANTUM-WELL LASER OPERATION

      VLSI design (Print)
    66. OYAFUSO F; VONALLMEN P; GRUPEN M; HESS K
      GAIN CALCULATION IN A QUANTUM-WELL LASER SIMULATOR USING AN 8 BAND K-CENTER-DOT-P MODEL

      VLSI design (Print)
    67. HESS K; ASKEW D; COOKMILLS J
      HIGH ENDOTHELIAL VENULE (HEV) CELL PHAGOCYTOSIS OF APOPTOTIC LEUKOCYTES

      The FASEB journal
    68. KIZILYALLI IC; ABELN GC; CHEN Z; LEE J; WEBER G; KOTZIAS B; CHETLUR S; LYDING JW; HESS K
      IMPROVEMENT OF HOT-CARRIER RELIABILITY WITH DEUTERIUM ANNEALS FOR MANUFACTURING MULTILEVEL METAL DIELECTRIC MOS SYSTEMS/

      IEEE electron device letters
    69. LEE J; AUR S; EKLUND R; HESS K; LYDING JW
      SECONDARY-ION MASS-SPECTROSCOPY CHARACTERIZATION OF THE DEUTERIUM SINTERING PROCESS FOR ENHANCED-LIFETIME COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    70. SIEGEL AM; BADHWAR A; ANDERMANN F; ROULEAU GA; HESS K; ANDERMANN E
      ANTICIPATION IN FAMILIAR CAVERNOUS ANGIOMAS

      Annals of neurology
    71. LYDING JW; HESS K; ABELN GC; THOMPSON DS; MOORE JS; HERSAM MC; FOLEY ET; LEE J; CHEN Z; HWANG ST; CHOI H; AVOURIS P; KIZILYALLI IC
      ULTRAHIGH VACUUM-SCANNING TUNNELING MICROSCOPY NANOFABRICATION AND HYDROGEN DEUTERIUM DESORPTION FROM SILICON SURFACES - IMPLICATIONS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY/

      Applied surface science
    72. SIEGEL AM; ANDERMANN E; BADHWAR A; ROULEAU GA; WOLFORD GL; ANDERMANN F; HESS K
      ANTICIPATION IN FAMILIAL CAVERNOUS ANGIOMA - A STUDY OF 52 FAMILIES FROM INTERNATIONAL FAMILIAL CAVERNOUS ANGIOMA STUDY

      Lancet
    73. CARTER AJ; SCOTT D; LAIRD JR; BAILEY L; KOVACH JA; HOOPES TG; PIERCE K; HEATH K; HESS K; FARB A; VIRMANI R
      PROGRESSIVE VASCULAR REMODELING AND REDUCED NEOINTIMAL FORMATION AFTER PLACEMENT OF A THERMOELASTIC SELF-EXPANDING NITINOL STENT IN AN EXPERIMENTAL-MODEL

      Catheterization and cardiovascular diagnosis
    74. DUCRAY A; BLOQUEL M; HESS K; HAMMOND GL; GERARD H; GERARD A
      ESTABLISHMENT OF A MOUSE SERTOLI-CELL LINE PRODUCING RAT ANDROGEN-BINDING PROTEIN (ABP)

      Steroids
    75. HESS K
      TALKING TURKEY (RESPONSE TO KUMMER,CORBY REMARK CONCERNING CRANBERRY SAUCE IN A RECENT BOOK-REVIEW)

      The New York times book review
    76. IPATOVA IP; CHIKALOVALUZINA OP; HESS K
      EFFECT OF LOCALIZED VIBRATIONS ON THE SI SURFACE CONCENTRATIONS OF H AND D

      Journal of applied physics
    77. HESS K; KIZILYALLI IC; LYDING JW
      GIANT ISOTOPE EFFECT IN HOT-ELECTRON DEGRADATION OF METAL-OXIDE-SILICON DEVICES

      I.E.E.E. transactions on electron devices
    78. GRUPEN M; HESS K
      SIMULATION OF CARRIER TRANSPORT AND NONLINEARITIES IN QUANTUM-WELL LASER-DIODES (VOL 34, PG 120, 1998)

      IEEE journal of quantum electronics
    79. GRUPEN M; HESS K
      SIMULATION OF CARRIER TRANSPORT AND NONLINEARITIES IN QUANTUM-WELL LASER-DIODES

      IEEE journal of quantum electronics
    80. ALLEMAN M; HESS K; KERMICLE J
      CIS AND TRANS CONTROL OF IMPRINTING AT THE MAIZE R-LOCUS DURING SEED DEVELOPMENT

      Developmental biology (Print)
    81. BENDERDOUR M; HESS K; DZONDOGADET M; NABET P; BELLEVILLE F; DOUSSET B
      BORON MODULATES EXTRACELLULAR-MATRIX AND TNF-ALPHA SYNTHESIS IN HUMANFIBROBLASTS

      Biochemical and biophysical research communications
    82. Klein, B; Register, LF; Hess, K; Deppe, DG; Deng, Q
      Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers

      APPLIED PHYSICS LETTERS
    83. Hess, K
      Milestones of hot-electron research in semiconductors

      HOT ELECTRONS IN SEMICONDUCTORS
    84. HESS K
      POWELL,JOHN,WESLEY AND THE UNMAKING OF THE WEST

      Environmental history
    85. ALIOSMAN F; BRUNNER JM; KUTLUK TM; HESS K
      PROGNOSTIC-SIGNIFICANCE OF GLUTATHIONE-S-TRANSFERASE-PI EXPRESSION AND SUBCELLULAR-LOCALIZATION IN HUMAN GLIOMAS

      Clinical cancer research
    86. SPITZ FR; GIACCO GG; HESS K; LARRY L; RICH TA; JANJAN N; CLEARY KR; SKIBBER JM
      P53 IMMUNOHISTOCHEMICAL STAINING PREDICTS RESIDUAL DISEASE AFTER CHEMORADIATION IN PATIENTS WITH HIGH-RISK RECTAL-CANCER

      Clinical cancer research
    87. KIZILYALLI IC; LYDING JW; HESS K
      DEUTERIUM POST-METAL ANNEALING OF MOSFETS FOR IMPROVED HOT-CARRIER RELIABILITY

      IEEE electron device letters
    88. KABA SE; KYRITSIS AP; HESS K; YUNG WKA; MERCIER R; DAKHIL S; JAECKLE KA; LEVIN VA
      TPDC-FUHU CHEMOTHERAPY FOR THE TREATMENT OF RECURRENT METASTATIC BRAIN-TUMORS

      Journal of clinical oncology
    89. JAKUMEIT J; DUNCAN A; RAVAIOLI U; HESS K
      CALCULATION OF THE HIGH-ENERGY TAIL OF THE ELECTRON-DISTRIBUTION IN SI-MOSFETS WITH AN EVOLUTIONARY ALGORITHM

      Physica status solidi. b, Basic research
    90. HOHAGE H; HESS K; JAHL C; GREVEN J; SCHLATTER E
      RENAL AND BLOOD-PRESSURE EFFECTS OF MOXONIDINE AND CLONIDINE IN SPONTANEOUSLY HYPERTENSIVE RATS

      Clinical nephrology
    91. MACUCCI M; HESS K; IAFRATE GJ
      NUMERICAL-SIMULATION OF SHELL-FILLING EFFECTS IN CIRCULAR QUANTUM DOTS

      Physical review. B, Condensed matter
    92. BENDERDOUR M; HESS K; GADET MD; DOUSSET B; NABET P; BELLEVILLE F
      EFFECT OF BORIC-ACID SOLUTION ON CARTILAGE METABOLISM

      Biochemical and biophysical research communications
    93. LEVIN B; HESS K; JOHNSON C
      SCREENING FOR COLORECTAL-CANCER - A COMPARISON OF 3 FECAL OCCULT BLOOD-TESTS

      Archives of internal medicine
    94. REGISTER LF; HESS K
      SIMULATION OF CARRIER CAPTURE IN SEMICONDUCTOR QUANTUM-WELLS - BRIDGING THE GAP FROM QUANTUM TO CLASSICAL TRANSPORT

      Applied physics letters
    95. GRUPEN M; HESS K
      SEVERE GAIN SUPPRESSION DUE TO DYNAMIC CARRIER HEATING IN QUANTUM-WELL LASERS

      Applied physics letters
    96. LARSEN WJ; CHEN L; POWERS R; ZHANG H; RUSSELL PT; CHAMBERS C; HESS K; FLICK R
      CUMULUS EXPANSION INITIATES PHYSICAL AND DEVELOPMENTAL AUTONOMY OF THE OOCYTE

      Zygote
    97. GUREVICH VL; PEVZNER VB; HESS K
      PHONON-ENHANCED LANDAUER RESISTANCE (VOL 7, PG 8363, 1995)

      Journal of physics. Condensed matter
    98. HESS K; LEMAIRE JM
      NICE AND LAZY CELL ATTACHMENTS

      Journal of pure and applied algebra
    99. JAKUMEIT J; RAVAIOLI U; HESS K
      CALCULATION OF HOT-ELECTRON DISTRIBUTIONS IN SILICON BY MEANS OF AN EVOLUTIONARY ALGORITHM

      Journal of applied physics
    100. SHAH P; MITIN V; GRUPEN M; SONG GH; HESS K
      NUMERICAL-SIMULATION OF WIDE BAND-GAP ALGAN INGAN LIGHT-EMITTING-DIODES FOR OUTPUT POWER CHARACTERISTICS AND EMISSION-SPECTRA/

      Journal of applied physics


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Documento generato il 22/10/20 alle ore 06:25:46