Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' HEISER T' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 19 riferimenti
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    1. Flink, C; Feick, H; McHugo, SA; Seifert, W; Hieslmair, H; Heiser, T; Istratov, AA; Weber, ER
      Out-diffusion and precipitation of copper in silicon: An electrostatic model

      PHYSICAL REVIEW LETTERS
    2. Streppel, M; Heiser, T; Stennert, E
      History of nerve sutures with special regard to hypoglossal-facial anastomosis

      HNO
    3. Heiser, T; Istratov, AA; Flink, C; Weber, ER
      Electrical characterization of copper related defect reactions in silicon

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. Flink, C; Feick, H; McHugo, SA; Mohammed, A; Seifert, W; Hieslmair, H; Heiser, T; Istratov, AA; Weber, ER
      Formation of copper precipitates in silicon

      PHYSICA B
    5. HEISER T; WEBER ER
      TRANSIENT ION-DRIFT-INDUCED CAPACITANCE SIGNALS IN SEMICONDUCTORS

      Physical review. B, Condensed matter
    6. HIESLMAIR H; ISTRATOV AA; HEISER T; WEBER ER
      EVALUATION OF PRECIPITATE DENSITIES AND CAPTURE RADII FROM THE ANALYSIS OF PRECIPITATION KINETICS

      Journal of applied physics
    7. ISTRATOV AA; HEDEMANN H; SEIBT M; VYVENKO OF; SCHROTER W; HEISER T; FLINK C; HIESLMAIR H; WEBER ER
      ELECTRICAL AND RECOMBINATION PROPERTIES OF COPPER-SILICIDE PRECIPITATES IN SILICON

      Journal of the Electrochemical Society
    8. ISTRATOV AA; HIESLMAIR H; HEISER T; FLINK C; WEBER ER
      THE DISSOCIATION-ENERGY AND THE CHARGE-STATE OF A COPPER-PAIR CENTER IN SILICON

      Applied physics letters
    9. HIESLMAIR H; ISTRATOV AA; MCHUGO SA; FLINK C; HEISER T; WEBER ER
      GETTERING OF IRON BY OXYGEN PRECIPITATES

      Applied physics letters
    10. STAVREV M; FISCHER D; WENZEL C; HEISER T
      STUDY OF TA(N,O) DIFFUSION BARRIER STABILITY - ANALYTICAL AND ELECTRICAL CHARACTERIZATION OF LOW-LEVEL CU CONTAMINATION IN SI

      Microelectronic engineering
    11. ISTRATOV AA; HIESLMAIR H; FLINK C; HEISER T; WEBER ER
      INTERSTITIAL COPPER-RELATED CENTER IN N-TYPE SILICON

      Applied physics letters
    12. ISTRATOV AA; FLINK C; HIELSMAIR H; HEISER T; WEBER ER
      INFLUENCE OF INTERSTITIAL COPPER ON DIFFUSION LENGTH AND LIFETIME OF MINORITY-CARRIERS IN P-TYPE SILICON

      Applied physics letters
    13. HEISER T; MCHUGO S; HIESLMAIR H; WEBER ER
      TRANSIENT ION DRIFT DETECTION OF LOW-LEVEL COPPER CONTAMINATION IN SILICON

      Applied physics letters
    14. SIMON L; FAURE J; MESLI A; HEISER T; GROB JJ; BALLADORE JL
      XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    15. HEISER T; MESLI A
      IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE - COMMENT

      Applied physics letters
    16. DIANI M; MESLI A; KUBLER L; CLAVERIE A; BALLADORE JL; AUBEL D; PEYRE S; HEISER T; BISCHOFF JL
      OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    17. ZAMOUCHE A; HEISER T; MESLI A
      INVESTIGATION OF FAST DIFFUSING IMPURITIES IN SILICON BY A TRANSIENT ION DRIFT METHOD

      Applied physics letters
    18. MESLI A; HEISER T; MULHEIM E
      COPPER DIFFUSIVITY IN SILICON - A REEXAMINATION

      Materials science & engineering. B, Solid-state materials for advanced technology
    19. HEISER T; MESLI A
      DETERMINATION OF THE COPPER DIFFUSION-COEFFICIENT IN SILICON FROM TRANSIENT ION-DRIFT

      Applied physics. A, Solids and surfaces


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/10/20 alle ore 15:56:33