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Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics
APPLIED PHYSICS LETTERS
Clarification of the ripple phase of lecithin bilayers using fully hydrated, aligned samples
PHYSICAL REVIEW E
Persistent layer-by-layer sputtering of Au(111)
JOURNAL OF APPLIED PHYSICS
Real-time x-ray scattering study of surface morphology evolution during ion erosion and epitaxial growth of Au(111)
PHYSICAL REVIEW B-CONDENSED MATTER
Effect of crystalline domain size on the photophysical properties of thin organic molecular films
PHYSICAL REVIEW B-CONDENSED MATTER
GaN nucleation and growth on sapphire(0001): Incorporation and interlayer transport
PHYSICAL REVIEW LETTERS
ION-ASSISTED NUCLEATION AND GROWTH OF GAN ON SAPPHIRE(0001)
Physical review. B, Condensed matter
X-RAY-SCATTERING STUDY OF THE SURFACE-MORPHOLOGY OF AU(111) DURING AR+ ION IRRADIATION
Physical review letters
REAL-TIME X-RAY-SCATTERING MEASUREMENT OF THE NUCLEATION KINETICS OF CUBIC GALLIUM NITRIDE ON BETA-SIC(001)
Physical review. B, Condensed matter
SMALL-ANGLE X-RAY-SCATTERING FROM LIPID BILAYER IS WELL DESCRIBED BY MODIFIED CAILLE THEORY, BUT NOT BY PARACRYSTALLINE THEORY
Biophysical journal
SMALL-ANGLE X-RAY-SCATTERING FROM LIPID BILAYERS IS WELL DESCRIBED BYMODIFIED CAILLE THEORY BUT NOT BY PARACRYSTALLINE THEORY
Biophysical journal
ROUGHNESS IN SI1-XGEX SI SUPERLATTICES - GROWTH TEMPERATURE-DEPENDENCE/
Journal of vacuum science & technology. A. Vacuum, surfaces, and films
NATURE AND EVOLUTION OF INTERFACES IN SI SI1-XGEX SUPERLATTICES/
Journal of electronic materials
ELECTRON-MICROSCOPY OF THE ORDERED BORON 2X1 STRUCTURE BURIED IN CRYSTALLINE SILICON
Applied surface science
CRITICAL FLUCTUATIONS IN MEMBRANES
Physical review letters
ANISOTROPIC ROUGHNESS IN GE SI SUPERLATTICES
Applied physics letters
INTERFACIAL STUDIES IN SEMICONDUCTOR HETEROSTRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES
Scanning microscopy
ELECTRICAL CHARACTERIZATION OF AN ULTRAHIGH CONCENTRATION BORON DELTA-DOPING LAYER
Applied physics letters
INTERFACE ROUGHNESS IN GE SI SUPERLATTICES
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
INFLUENCE OF ANNEALING ON THE INTERFACE STRUCTURE AND STRAIN RELIEF IN SI GE HETEROSTRUCTURES ON (100) SI/
Scanning microscopy
CORRELATED ROUGHNESS IN (GE(M) SI(N))P SUPERLATTICES ON SI(100)/
Physical review. B, Condensed matter