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La ricerca find articoli where authors phrase all words ' HAMDANI F' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 12 riferimenti
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    1. Hamdani, F; Goni, AR; Syassen, K; Triboulet, R
      Magnetoexcitons in Zn0.98Mn0.02Te under high hydrostatic pressure

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    2. Morkoc, H; Hamdani, F; Salvador, A
      Electronic and optical properties of III-V nitride based quantum wells andsuperlattices

      GALLIUM NITRIDE (GAN) I
    3. TANG H; KIM W; BOTCHKAREV A; POPOVICI G; HAMDANI F; MORKOC H
      ANALYSIS OF CARRIER MOBILITY AND CONCENTRATION IN SI-DOPED GAN GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY

      Solid-state electronics
    4. YEADON M; MARSHALL MT; HAMDANI F; PEKIN S; MORKOC H; GIBSON JM
      IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OF ALN GROWTH BY NITRIDATIONOF (0001)ALPHA-AL2O3

      Journal of applied physics
    5. HAMDANI F; YEADON M; SMITH DJ; TANG H; KIM W; SALVADOR A; BOTCHKAREV AE; GIBSON JM; POLYAKOV AY; SKOWRONSKI M; MORKOC H
      MICROSTRUCTURE AND OPTICAL-PROPERTIES OF EPITAXIAL GAN ON ZNO(0001) GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY

      Journal of applied physics
    6. HAMDANI F; BOTCHKAREV AE; TANG H; KIM W; MORKOC H
      EFFECT OF BUFFER LAYER AND SUBSTRATE SURFACE POLARITY ON THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAN ON ZNO

      Applied physics letters
    7. HAMDANI F; BOTCHKAREV A; KIM W; MORKOC H; YEADON M; GIBSON JM; TSEN SCY; SMITH DJ; EVANS K; LITTON CW; MITCHEL WC; HEMENGER P
      OPTICAL-PROPERTIES OF GAN GROWN ON ZNO BY REACTIVE MOLECULAR-BEAM EPITAXY

      Applied physics letters
    8. YEADON M; HAMDANI F; XU GY; SALVADOR A; BOTCHKAREV AE; GIBSON JM; MORKOC H
      SURFACE-MORPHOLOGY AND OPTICAL CHARACTERIZATION OF GAN GROWN ON ALPHA-AL2O3(0001) BY RADIO-FREQUENCY-ASSISTED MOLECULAR-BEAM EPITAXY

      Applied physics letters
    9. GIL B; HAMDANI F; MORKOC H
      OSCILLATOR-STRENGTHS FOR OPTICAL BAND-TO-BAND PROCESSES IN GAN EPILAYERS

      Physical review. B, Condensed matter
    10. STOEHR M; AUBEL D; JUILLAGUET S; BISCHOFF JL; KUBLER L; BOLMONT D; HAMDANI F; FRAISSE B; FOURCADE R
      PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)

      Physical review. B, Condensed matter
    11. STOEHR M; MAURIN M; HAMDANI F; LASCARAY JP; BARBUSSE D; FRAISSE B; FOURCADE R; ABRAHAM P; MONTEIL Y
      DETERMINATION OF RESIDUAL STRAIN BY REFLECTIVITY, X-RAY-DIFFRACTION AND RAMAN-SPECTROSCOPY IN ZNSE EPILAYERS GROWN ON GAAS(001), INP(001) AND GASB(001) BY METAL-ORGANIC VAPOR-PHASE EPITAXY

      Materials science & engineering. B, Solid-state materials for advanced technology
    12. COQUILLAT D; HAMDANI F; LASCARAY JP; BRIOT O; BRIOT N; AULOMBARD RL
      BIAXIAL-STRAIN EFFECT ON EXCITONIC TRANSITIONS E(0) AND E(0)-RANGE 4.5-200 K AND ZEEMAN SPLITTING IN ZNSE(DELTA(0) IN THE TEMPERATURE)GAAS EPILAYERS/

      Physical review. B, Condensed matter


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/10/20 alle ore 05:31:46