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La ricerca find articoli where authors phrase all words ' Fonash, SJ' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 41 riferimenti
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    1. Krishnan, AT; Bae, SH; Fonash, SJ
      Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

      IEEE ELECTRON DEVICE LETTERS
    2. Nam, WJ; Bae, S; Kalkan, AK; Fonash, SJ
      Nano- and microchannel fabrication using column/void network deposited silicon

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    3. Suliman, SA; Gollagunta, N; Trabzon, L; Hao, J; Ridley, RS; Knoedler, CM; Dolny, GM; Awadelkarim, OO; Fonash, SJ
      The dependence of UMOSFET characteristics and reliability on geometry and processing

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    4. Suliman, SA; Awadelkarim, OO; Fonash, SJ; Dolny, GM; Hao, J; Ridley, RS; Knoedler, CM
      The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs

      SOLID-STATE ELECTRONICS
    5. Cuiffi, JD; Hayes, DJ; Fonash, SJ; Brown, KN; Jones, AD
      Desorption-ionization mass spectrometry using deposited nanostructured silicon films

      ANALYTICAL CHEMISTRY
    6. Bae, S; Farber, DG; Fonash, SJ
      Chemical bonding and stability of 50 degrees C plasma-deposited silicon nitrides

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    7. Bae, S; Farber, DG; Fonash, SJ
      Characteristics of low-temperature silicon nitride (SiNx : H) using electron cyclotron resonance plasma

      SOLID-STATE ELECTRONICS
    8. Krishnan, AT; Bae, S; Fonash, SJ
      Low temperature microcrystalline silicon thin film resistors on glass substrates

      SOLID-STATE ELECTRONICS
    9. Cheng, SC; Pantano, CG; Kalkan, AK; Bae, SH; Fonash, SJ
      TEM characterisation of an interfacial layer between silicon and glass

      PHYSICS AND CHEMISTRY OF GLASSES
    10. Kalkan, AK; Bae, SH; Li, HD; Hayes, DJ; Fonash, SJ
      Nanocrystalline Si thin films with arrayed void-column network deposited by high density plasma

      JOURNAL OF APPLIED PHYSICS
    11. Kalkan, AK; Fonash, SJ; Cheng, SC
      Band-tail photoluminescence in nanocrystalline Si

      APPLIED PHYSICS LETTERS
    12. Bae, S; Fonash, SJ
      Defined crystallization of amorphous-silicon films using contact printing

      APPLIED PHYSICS LETTERS
    13. Okandan, M; Fonash, SJ; Maiti, B; Tseng, HH; Tobin, P
      Wearout, quasi breakdown, and annealing of ultrathin dielectrics - Impact on complementary metal oxide semiconductor performance and reliability

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    14. Bae, S; Fonash, SJ
      Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    15. Fonash, SJ
      Plasma processing damage in etching and deposition

      IBM JOURNAL OF RESEARCH AND DEVELOPMENT
    16. Farber, DG; Bae, S; Okandan, M; Reber, DM; Kuzma, T; Fonash, SJ
      Pathway to depositing device-quality 50 degrees C silicon nitride in a high-density plasma system

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    17. Wang, YZ; Fonash, SJ; Awadelkarim, OO; Gu, T
      Crystallization of a-Si : H on glass for active layers in thin film transistors - Effects of glass coating

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    18. BAE SH; KALKAN AK; CHENG SC; FONASH SJ
      CHARACTERISTICS OF AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS DEPOSITED AT 120 DEGREES-C BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    19. OKANDAN M; FONASH SJ; OZAITA M; PREUNINGER F; CHAN YD; WERKING J
      CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING

      IEEE electron device letters
    20. KALKAN AK; FONASH SJ
      METAL-INDUCED CRYSTALLIZATION OF A-SI THIN-FILMS BY NONVACUUM TREATMENTS

      Journal of the Electrochemical Society
    21. OKANDAN M; FONASH SJ; AWADELKARIM OO; CHAN YD; PREUNINGER F
      SOFT-BREAKDOWN DAMAGE IN MOSFETS DUE TO HIGH-DENSITY PLASMA-ETCHING EXPOSURE

      IEEE electron device letters
    22. BAE SH; FONASH SJ
      IMPACT OF STRUCTURE ON PHOTOGATING

      Journal of applied physics
    23. FONASH SJ; OZAITA M; AWADELKARIM OO
      DETECTION AND COMPARISON OF LOCALIZED STATES PRODUCED IN POLY-SI ULTRA-THIN OXIDE SILICON, STRUCTURES BY PLASMA EXPOSURE OR PLASMA CHARGINGDURING REACTIVE ION ETCHING

      Journal of applied physics
    24. AWADELKARIM OO; FONASH SJ; MIKULAN PI; CHAN YD
      PLASMA-CHARGING DAMAGE TO GATE SIO2 AND SIO2 SI INTERFACES IN SUBMICRON N-CHANNEL TRANSISTORS - LATENT DEFECTS AND PASSIVATION/DEPASSIVATION OF DEFECTS BY HYDROGEN/

      Journal of applied physics
    25. HOWLAND WH; FONASH SJ
      ON SEMICONDUCTOR SURFACE EVALUATION USING THE EFFECTIVE SURFACE RECOMBINATION SPEED FOR SCHOTTKY-COUPLED PHOTOVOLTAGE MEASUREMENTS

      Journal of the Electrochemical Society
    26. SUNTHARALINGAM V; FONASH SJ
      ELECTRICALLY REVERSIBLE DEPASSIVATION PASSIVATION MECHANISM IN POLYCRYSTALLINE SILICON/

      Applied physics letters
    27. AWADELKARIM OO; FONASH SJ; MIKULAN PI; OZAITA M; CHAN YD
      HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING

      Microelectronic engineering
    28. GU T; AWADELKARIM OO; FONASH SJ; REMBETSKI JF; CHAN YD
      ANNEALING OF REACTIVE ION ETCHING PLASMA-EXPOSED THIN OXIDES

      Journal of the Electrochemical Society
    29. HOWLAND WH; FONASH SJ
      ERRORS AND ERROR-AVOIDANCE IN THE SCHOTTKY COUPLED SURFACE PHOTOVOLTAGE TECHNIQUE

      Journal of the Electrochemical Society
    30. GU T; DITIZIO RA; FONASH SJ; AWADELKARIM OO; RUZYLLO J; COLLINS RW; LEARY HJ
      DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    31. AWADELKARIM OO; MIKULAN PI; GU T; DITIZIO RA; FONASH SJ
      HYDROGEN PERMEATION, SI DEFECT GENERATION, AND THEIR INTERACTION DURING CHF3 O-2 CONTACT ETCHING/

      IEEE electron device letters
    32. GU T; OKANDAN M; AWADELKARIM OO; FONASH SJ; REMBETSKI JF; AUM P; CHAN YD
      IMPACT OF POLYSILICON DRY-ETCHING ON 0.5-MU-M NMOS TRANSISTOR PERFORMANCE - THE PRESENCE OF BOTH PLASMA BOMBARDMENT DAMAGE AND PLASMA CHARGING DAMAGE

      IEEE electron device letters
    33. YIN AG; FONASH SJ
      HIGH-PERFORMANCE P-CHANNEL POLY-SI TFTS USING ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA PASSIVATION

      IEEE electron device letters
    34. GU T; AWADELKARIM OO; FONASH SJ; CHAN YD
      DEGRADATION OF SUBMICRON N-CHANNEL MOSFET HOT-ELECTRON RELIABILITY DUE TO EDGE DAMAGE FROM POLYSILICON GATE PLASMA-ETCHING

      IEEE electron device letters
    35. YIN AG; FONASH SJ
      OXYGEN-PLASMA-ENHANCED CRYSTALLIZATION OF A-SI-H FILMS ON GLASS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    36. FONASH SJ; HOU JY; RUBINELLI FA; BENNETT M; WIEDEMAN S; YANG LY; NEWTON J
      PHOTODETECTION ENHANCEMENT IN 2-TERMINAL AMORPHOUS SILICON-BASED DEVICES - AN EXPERIMENTAL AND COMPUTER-SIMULATION STUDY

      Optical engineering
    37. FONASH SJ; VISWANATHAN CR; CHAN YD
      A SURVEY OF DAMAGE EFFECTS IN PLASMA-ETCHING

      Solid state technology
    38. GU T; AWADELKARIM OO; FONASH SJ; REMBETSKI JF; CHAN YD
      EFFECT OF PLASMA-ETCHING EDGE-TYPE EXPOSURES ON SI SUBSTRATES - A CORRELATION BETWEEN CARRIER LIFETIME AND ETCH-INDUCED DEFECT STATES

      Journal of the Electrochemical Society
    39. NICKEL NH; YIN A; FONASH SJ
      INFLUENCE OF HYDROGEN AND OXYGEN PLASMA TREATMENTS ON GRAIN-BOUNDARY DEFECTS IN POLYCRYSTALLINE SILICON

      Applied physics letters
    40. LIU G; FONASH SJ
      POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON CORNING 7059 GLASS SUBSTRATES USING SHORT-TIME, LOW-TEMPERATURE PROCESSING

      Applied physics letters
    41. REMBETSKI JF; CHAN YD; BODEN E; GU T; AWADELKARIM OO; DITIZIO RA; FONASH SJ; LI XY; VISWANATHAN CR
      A COMPARISON OF CL2 AND HBR CL2-BASED POLYSILICON ETCH CHEMISTRIES - IMPACT ON SIO2 AND SI SUBSTRATE DAMAGE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 26/10/20 alle ore 03:42:32