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La ricerca find articoli where authors phrase all words ' Fissel, A' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 33 riferimenti
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    1. Bechstedt, F; Fissel, A; Furthmuller, J; Grossner, U; Zywietz, A
      Native defects and complexes in SiC

      JOURNAL OF PHYSICS-CONDENSED MATTER
    2. Fissel, A; Akhtariev, R; Kaiser, U; Richter, W
      MBE growth of Si on SiC(0001): from superstructures to islands

      JOURNAL OF CRYSTAL GROWTH
    3. Fissel, A
      High-quality SIC epitaxial layers and low-dimensional heteropolytypic SIC structures grown by solid-source MBE

      JOURNAL OF CRYSTAL GROWTH
    4. Fissel, A; Richter, W; Furthmuller, J; Bechstedt, F
      On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    5. Fissel, A; Richter, W
      MBE growth kinetics of Si on heavily-doped Si(111): P: a self-surfactant

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    6. Fissel, A; Akhtariev, R; Richter, W
      Stranski-Krastanov growth of Si on SiC(0001)

      THIN SOLID FILMS
    7. Hess, G; Bauer, A; Krausslich, J; Fissel, A; Schroter, B; Richter, W; Schell, N; Matz, W; Goetz, K
      Si/Ge-nanocrystals on SiC(0001)

      THIN SOLID FILMS
    8. Fissel, A; Kaiser, U; Schroter, B; Krausslich, J; Richter, W
      MBE-growth of heteropolytypic low-dimensional structures of SiC

      THIN SOLID FILMS
    9. Fissel, A
      Thermodynamic considerations of the epitaxial growth of SiC polytypes

      JOURNAL OF CRYSTAL GROWTH
    10. Fissel, A; Schroter, B; Kaiser, U; Richter, W
      Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC

      APPLIED PHYSICS LETTERS
    11. Kipshidze, DG; Schenk, HP; Fissel, A; Kaiser, U; Schulze, J; Richter, W; Weihnacht, M; Kunze, R; Krausslich, J
      Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices

      SEMICONDUCTORS
    12. Fissel, A; Kaiser, U; Krausslich, J; Pfennighaus, K; Schroter, B; Schulz, J; Richter, W
      Epitaxial growth of SiC-heterostructures on alpha-SiC(0001) by solid-source MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Bauer, A; Krausslich, J; Kocher, B; Goetz, K; Fissel, A; Richter, W
      X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Schenk, HPD; Kaiser, U; Kipshidze, GD; Fissel, A; Krausslich, J; Hobert, H; Schulze, J; Richter, W
      Growth of atomically smooth AlN films with a 5 : 4 coincidence interface on Si(111) by MBE

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    15. Kaiser, U; Khodos, I; Brown, PD; Chuvilin, A; Albrecht, M; Humphreys, CJ; Fissel, A; Richter, W
      A transmission electron microscopy investigation of SiC films grown on SiCsubstrates by solid-source molecular beam epitaxy

      JOURNAL OF MATERIALS RESEARCH
    16. Fissel, A; Pfennighaus, K; Kaiser, U; Schroter, B; Richter, W
      Mechanisms of homo- and heteroepitaxial growth of SiC on alpha-SiC(0001) by solid-source molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    17. Schenk, HPD; Kipshidze, GD; Lebedev, VB; Shokhovets, S; Goldhahn, R; Krausslich, J; Fissel, A; Richter, W
      Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    18. Schenk, HPD; Kipshidze, GD; Kaiser, U; Fissel, A; Krausslich, J; Schulze, J; Richter, W
      Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    19. Kaiser, U; Newcomb, SB; Stobbs, WM; Adamik, M; Fissel, A; Richter, W
      A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

      JOURNAL OF MATERIALS RESEARCH
    20. FURTHMULLER J; KACKELL P; BECHSTEDT F; FISSEL A; PFENNIGHAUS K; SCHROTER B; RICHTER W
      MODEL OF THE EPITAXIAL-GROWTH OF SIC-POLYTYPES UNDER SURFACE-STABILIZED CONDITIONS

      Journal of electronic materials
    21. FISSEL A; PFENNIGHAUS K; RICHTER W
      MBE GROWTH OF QUANTUM-SIZE SI-DOTS ON SIC(0001) MONITORED BY RHEED

      Thin solid films
    22. FISSEL A; PFENNIGHAUS K; KAISER U; SCHROTER B; RICHTER W
      HEXAGONAL AND CUBIC SIC THIN-FILMS ON SIC DEPOSITED BY SOLID SOURCE MBE

      DIAMOND AND RELATED MATERIALS
    23. KARMANN S; SCHENK HPD; KAISER U; FISSEL A; RICHTER W
      GROWTH OF COLUMNAR ALUMINUM NITRIDE LAYERS ON SI(111) BY MOLECULAR-BEAM EPITAXY

      Materials science & engineering. B, Solid-state materials for advanced technology
    24. PFENNIGHAUS K; FISSEL A; KAISER U; WENDT M; KRAUSSLICH J; PEITER G; SCHROTER B; RICHTER W
      INVESTIGATION OF GROWTH-CONDITIONS FOR EPITAXIAL-GROWTH OF SIC ON SI IN THE SOLID-SOURCE MOLECULAR-BEAM EPITAXY

      Materials science & engineering. B, Solid-state materials for advanced technology
    25. FISSEL A; PFENNIGHAUS K; KAISER U; SCHROTER B; RICHTER W
      INFLUENCE OF GROWTH-CONDITIONS ON GROWTH MODE AND LAYER STRUCTURE IN MBE-GROWTH OF SIC ON SIC(0001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    26. KAISER U; BROWN PD; JINSCHEK J; ADAMIK M; HUMPHREYS CJ; KARMANN S; FISSEL A; PFENNIGHAUS K; RICHTER W
      MICROSTRUCTURAL INVESTIGATIONS OF SILICON-CARBIDE AND ALUMINUM NITRIDE MBE LAYERS ON SILICON SUBSTRATES

      European journal of cell biology
    27. FISSEL A; OEHME M; PFENNIGHAUS K; RICHTER W
      RHEED INVESTIGATIONS OF MBE-GROWTH KINETICS OF SI ON SI(111) AND SIC ON SIC(100)

      Surface science
    28. FISSEL A; PFENNIGHAUS K; RICHTER W
      INVESTIGATIONS OF STRANSKI-KRASTANOV GROWTH-KINETICS OF SI-DOTS ON 6H-SIC(0001)

      Applied physics letters
    29. FISSEL A; KAISER U; PFENNIGHAUS K; SCHROTER B; RICHTER W
      GROWTH OF 6H-SIC ON 6H-SIC(0001) BY MIGRATION-ENHANCED EPITAXY CONTROLLED TO AN ATOMIC-LEVEL USING SURFACE SUPERSTRUCTURES

      Applied physics letters
    30. FISSEL A; SCHROTER B; KRAUSSLICH J; RICHTER W
      PREPARATION OF SIC FILMS BY SOLID-STATE SOURCE EVAPORATION

      Thin solid films
    31. KRAUSSLICH J; FISSEL A; KAISER U; GOETZ K; DRESSLER L
      X-RAY, TRANSMISSION ELECTRON-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY CHARACTERIZATION OF SIC THIN-FILMS ON SI(111)

      Journal of physics. D, Applied physics
    32. FISSEL A; KAISER U; DUCKE E; SCHROTER B; RICHTER W
      EPITAXIAL-GROWTH OF SIC THIN-FILMS ON SI-STABILIZED ALPHA-SIC(0001) AT LOW-TEMPERATURES BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY

      Journal of crystal growth
    33. FISSEL A; SCHROTER B; RICHTER W
      LOW-TEMPERATURE GROWTH OF SIC THIN-FILMS ON SI AND 6H-SIC BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/10/20 alle ore 18:03:39