Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' FRAISSE B' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 13 riferimenti
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    1. Wilk, A; Fraisse, B; Christol, P; Boissier, G; Grech, P; El Gazouli, M; Rouillard, Y; Baranov, AN; Joullie, A
      MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m

      JOURNAL OF CRYSTAL GROWTH
    2. Wilk, A; Genty, F; Fraisse, B; Boissier, G; Grech, P; El Gazouli, M; Christol, P; Oswald, J; Simecek, T; Hulicius, E; Joullie, A
      MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers

      JOURNAL OF CRYSTAL GROWTH
    3. Yarekha, DA; Vicet, A; Perona, A; Glastre, G; Fraisse, B; Rouillard, Y; Skouri, EM; Boissier, G; Grech, P; Joullie, A; Alibert, C; Baranov, AN
      High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    4. Namavar, F; Colter, PC; Planes, N; Fraisse, B; Pernot, J; Juillaguet, S; Camassel, J
      Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    5. ALMUNEAU G; GENTY F; CHUSSEAU L; BERTRU N; FRAISSE B; JACQUET J
      MOLECULAR-BEAM-EPITAXY GROWTH OF 1.3-MU-M HIGH-REFLECTIVITY ALGAASSB ALASSB BRAGG-MIRROR/

      Electronics Letters
    6. ROYO F; SCHWEDLER R; CAMASSEL J; MEYER R; HARDTDEGEN H; FRAISSE B
      SHALLOW STRAINED INXGA1-XAS INYGA1-YAS SUPERLATTICES EMBEDDED IN P-I-N-DIODES - STRUCTURAL-PROPERTIES AND OPTICAL-RESPONSE/

      Physical review. B, Condensed matter
    7. STOEHR M; AUBEL D; JUILLAGUET S; BISCHOFF JL; KUBLER L; BOLMONT D; HAMDANI F; FRAISSE B; FOURCADE R
      PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)

      Physical review. B, Condensed matter
    8. TALIERCIO T; DILHAN M; MASSONE E; FOUCARAN A; GUE AM; BRETAGNON T; FRAISSE B; MONTES L
      POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS

      Sensors and actuators. A, Physical
    9. TALIERCIO T; DILHAN M; MASSONE E; GUE AM; FRAISSE B; FOUCARAN A
      REALIZATION OF POROUS SILICON MEMBRANES FOR GAS SENSOR APPLICATIONS

      Thin solid films
    10. AUBEL D; DIANI M; STOEHR M; BISCHOFF JL; KUBLER L; BOLMONT D; FRAISSE B; FOURCADE R; MULLER D
      IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY

      Journal de physique. III
    11. ROYO F; CAMASSEL J; LEFEBVRE P; MEYER R; HARDTDEGEN H; FRAISSE B; SCHWEDLER R
      STRUCTURAL INVESTIGATIONS OF INGAAS INGAAS SLSS FOR OPTOELECTRONIC DEVICE APPLICATIONS/

      Superlattices and microstructures
    12. KOHL A; JUILLAGUET S; FRAISSE B; SCHWEDLER R; ROYO F; PEYRE H; BRUGGEMAN F; WOLTER K; LEO K; KURZ H; CAMASSEL J
      GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS INXGA1-XAS STRAINED-LAYER SUPERLATTICES/

      Materials science & engineering. B, Solid-state materials for advanced technology
    13. STOEHR M; MAURIN M; HAMDANI F; LASCARAY JP; BARBUSSE D; FRAISSE B; FOURCADE R; ABRAHAM P; MONTEIL Y
      DETERMINATION OF RESIDUAL STRAIN BY REFLECTIVITY, X-RAY-DIFFRACTION AND RAMAN-SPECTROSCOPY IN ZNSE EPILAYERS GROWN ON GAAS(001), INP(001) AND GASB(001) BY METAL-ORGANIC VAPOR-PHASE EPITAXY

      Materials science & engineering. B, Solid-state materials for advanced technology


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/10/20 alle ore 21:38:32