Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words ' Choi, YI' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 52 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Lee, YS; Han, MK; Choi, YI
      Analytic models for the temperature dependence of the breakdown voltage of6H-and 4H-SiC rectifiers

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    2. Kang, SG; Chung, H; Yoo, YD; Lee, JG; Choi, YI; Yu, YS
      Mechanism of growth inhibitory effect of mitomycin-C on cultured human retinal pigment epithelial cells: Apoptosis and cell cycle arrest

      CURRENT EYE RESEARCH
    3. Choi, YI; Jeon, SH; Jang, J; Han, S; Kim, JK; Chung, H; Lee, HW; Chung, HY; Park, SD; Seong, RH
      Notch1 confers a resistance to glucocorticoid-induced apoptosis on developing thymocytes by down-regulating SRG3 expression

      PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
    4. Park, IY; Choi, YI; Chung, SK; Lim, HJ; Mo, SI; Choi, JS; Han, MK
      Numerical analysis on the LDMOS with a double epi-layer and trench electrodes

      MICROELECTRONICS JOURNAL
    5. Han, SM; Choi, H; Ko, MG; Choi, YI; Sohn, DH; Kim, JK; Shin, D; Chung, HY; Lee, HW; Kim, JB; Park, SD; Seong, RH
      Peripheral T cells become sensitive to glucocorticoid- and stress-induced apoptosis in transgenic mice overexpressing SRG3

      JOURNAL OF IMMUNOLOGY
    6. Lee, YS; Lee, BH; Lee, WO; Han, MK; Choi, YI
      Analysis of dual-gate LIGBT with gradual hole injection

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    7. Lim, MS; Park, CM; Han, MK; Choi, YI
      In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    8. Chung, YS; Park, IY; Choi, YI; Chung, SK
      Temperature dependent effective ionization coefficient for Si

      MICROELECTRONIC ENGINEERING
    9. Kim, HW; Choi, YI; Chung, SK
      Linearly-graded surface-doped SOI LDMOSFET with recessed source

      MICROELECTRONIC ENGINEERING
    10. Yoo, SJ; Kim, SH; Choi, YI; Chung, SK
      Numerical analysis of SOI LDMOS using a recessed source and a trench drain

      MICROELECTRONICS JOURNAL
    11. Lee, YS; Byeon, DS; Han, MK; Choi, YI
      A new lateral dual-gate thyristor with current saturation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. Cho, SY; Lee, KS; Song, JW; Kim, YK; Choi, YI; Liu, Y; Iwamoto, M
      A study on the dielectric relaxation time of arachidic acid monolayers by MDC measurement

      MOLECULAR CRYSTALS AND LIQUID CRYSTALS
    13. Lim, MS; Park, CM; Han, MK; Choi, YI
      Investigation of field emission characteristics for Si-base materials: Titanium silicide, poly-Si, and single crystal Si

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    14. Choi, YI; Noh, EW; Han, MS; Son, SH
      Adaptor-aided PCR to identify T-DNA junctions in transgenic plants

      BIOTECHNIQUES
    15. Kim, SL; Yang, HY; Choi, YI
      A recessed source and trench drain SOI LDMOS improving the on-characteristics

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    16. Byeon, DS; Lee, BH; Han, MK; Choi, YI
      The maximum controllable current of emitter switched thyristors employing the segmented P-base

      PHYSICA SCRIPTA
    17. Kim, SL; Yang, HY; Choi, YI; Chung, SR; Han, MK
      A low on-resistance SOI LDMOS with an elevated internal ring

      PHYSICA SCRIPTA
    18. Kim, DY; Byeon, DS; Han, MK; Choi, YI
      A lateral trench-MOS bipolar-mode FET an silicon-on-insulator

      PHYSICA SCRIPTA
    19. Park, IY; Choi, YI
      Analytic breakdown modeling for GaAs Schottky diodes

      PHYSICA SCRIPTA
    20. Park, IY; Choi, YI
      Trench cathode TIGBT with improved latch-up characteristics

      PHYSICA SCRIPTA
    21. Kim, MS; Kim, KK; Kim, SY; Kim, Y; Won, YH; Choi, YI; Mho, SI
      In-situ monitoring of anodic oxidation of p-type Si(100) by electrochemical impedance techniques in nonaqueous and aqueous solutions

      BULLETIN OF THE KOREAN CHEMICAL SOCIETY
    22. Chun, JH; Lee, BH; Byeon, DS; Kim, DY; Han, MK; Choi, YI
      An insulated gate bipolar transistor employing the plugged n(+) anode

      MICROELECTRONICS AND RELIABILITY
    23. Byeon, DS; Chun, JH; Lee, BH; Kim, DY; Han, MK; Choi, YI
      The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

      MICROELECTRONICS JOURNAL
    24. Oh, JK; Kim, DY; Lee, BH; Byeon, DS; Han, MK; Choi, YI
      A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics

      MICROELECTRONICS JOURNAL
    25. LEE BH; CHUN JH; KIM SD; BYEON DS; LEE WO; HAN MK; CHOI YI
      A NEW GRADUAL HOLE INJECTION DUAL-GATE LIGBT

      IEEE electron device letters
    26. BYEON DS; LEE BH; KIM DY; HAN MK; CHOI YI
      CB-BRT - A NEW BASE RESISTANCE-CONTROLLED THYRISTOR EMPLOYING A SELF-ALIGNED CORRUGATED P-BASE

      IEEE electron device letters
    27. Lee, YS; Lee, BH; Byeon, DS; Oh, JK; Han, MK; Kim, SD; Choi, YI
      The temperature characteristics of the LDMOS, LIGBT, SINFET and IBT

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    28. YANG K; BYEON DS; HAN MK; CHOI YI
      OPTIMUM DESIGN OF THE FIELD PLATE IN THE CYLINDRICAL P(- ANALYTICAL APPROACH()N JUNCTION )

      Solid-state electronics
    29. KIM DY; KIM SD; HAN MK; CHOI YI
      BIPOLAR-FIELD-EFFECT-TRANSISTOR HYBRID-MODE OPERATION OF LATERAL SILICON-ON-INSULATOR BIPOLAR MODE FIELD-EFFECT TRANSISTOR WITH IMPROVED CURRENT GAIN

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    30. PARK CM; LIM MS; HAN MK; CHOI YI
      A COMPARISON OF POLY SILICON AND TITANIUM POLYCIDE FOR FIELD-EMISSIONTIP

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. JO J; CHOI YI; KIM DM; ALT K; WANG KL
      OBSERVATION OF RESONANCES BY INDIVIDUAL ENERGY-LEVELS IN INGAAS ALAS TRIPLE-BARRIER RESONANT-TUNNELING DIODES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    32. KIM SD; KIM DY; LIM MS; HAN MK; CHOI YI
      EFFECTS OF DRIFT REGION DOPING ON CURRENT CHARACTERISTICS IN SOI BMFETS

      Physica scripta. T
    33. YUN CM; KIM JH; HAN MK; CHOI YI
      COMPARISON OF LATERAL IGBT AND LATERAL EMITTER SWITCHED THYRISTOR WITH A PARTIAL BURIED OXIDE LAYER

      Physica scripta. T
    34. BYEON DS; HAN MK; CHOI YI
      THE BREAKDOWN VOLTAGE OF NEGATIVE CURVATURED P(+)N DIODES USING A SOILAYER

      Solid-state electronics
    35. LEE BH; BYEON DS; KIM DY; LEE WO; HAN MK; CHOI YI
      DUAL-GATE SHORTED ANODE SOI LATERAL INSULATED GATE BIPOLAR-TRANSISTORSUPPRESSING THE SNAP-BACK

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    36. CHUNG SK; HAN SY; SHIN JC; CHOI YI; KIM SB
      AN ANALYTICAL MODEL FOR MINIMUM DRIFT REGION LENGTH OF SOI RESURF DIODES

      IEEE electron device letters
    37. YUN CM; KIM DY; HAN MK; CHOI YI
      NUMERICAL-ANALYSIS OF A NEW VERTICAL IGBT STRUCTURE WITH REDUCED JFETEFFECT

      Solid-state electronics
    38. HAN SY; NA JM; CHOI YI; SHIN JC; CHUNG SK
      AN ANALYTICAL MODEL OF THE BREAKDOWN VOLTAGE AND MINIMUM EPI LAYER LENGTH FOR RESURF PN DIODES

      Solid-state electronics
    39. CHUNG YS; HAN SY; CHOI YI; CHUNG SK
      CLOSED-FORM ANALYTICAL EXPRESSIONS FOR THE BREAKDOWN VOLTAGE OF GAAS PARALLEL-PLANE P(+)N JUNCTION IN (100), (110) AND (111) ORIENTATIONS

      Solid-state electronics
    40. BYEON DS; HAN MK; CHOI YI
      ANALYTICAL SOLUTION OF THE BREAKDOWN VOLTAGE FOR 6H-SILICON CARBIDE P(+)N JUNCTION

      Journal of applied physics
    41. YUN CM; HAN MK; CHOI YI
      A NEW POWER MOSFET WITH SELF CURRENT LIMITING CAPABILITY

      International journal of electronics
    42. KIM HS; KIM SD; HAN MK; YOON SN; CHOI YI
      BREAKDOWN VOLTAGE ENHANCEMENT OF THE P-N-JUNCTION BY SELF-ALIGNED DOUBLE DIFFUSION PROCESS THROUGH A TAPERED SIO2 IMPLANT MASK

      IEEE electron device letters
    43. KIM SD; KIM IJ; HAN MK; CHOI YI
      AN ACCURATE ON-RESISTANCE MODEL FOR LOW-VOLTAGE VDMOS DEVICES

      Solid-state electronics
    44. CHUNG SK; YOO DC; CHOI YI
      AN ANALYTICAL METHOD FOR 2-DIMENSIONAL FIELD DISTRIBUTION OF A MOS STRUCTURE WITH A FINITE-FIELD PLATE

      I.E.E.E. transactions on electron devices
    45. LEE BH; YUN CM; BYEON DS; HAN MK; CHOI YI
      A TRENCH-GATE SILICON-ON-INSULATOR LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH THE P(+) CATHODE WELL

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    46. KIM HS; KIM SD; HAN MK; CHOI YI
      LOW-LOSS SCHOTTKY RECTIFIER UTILIZING TRENCH SIDEWALL AS JUNCTION-BARRIER-CONTROLLED SCHOTTKY CONTACT

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    47. MOON TH; CHOI YI; CHUNG SK
      CALCULATION OF AVALANCHE BREAKDOWN VOLTAGE OF THE INP P-N JUNCTION()

      Solid-state electronics
    48. KKIM IJ; KIM SD; CHOI YI; HAN MK
      ANALYTICAL EXPRESSIONS FOR THE 3-DIMENSIONAL EFFECT ON THE BREAKDOWN VOLTAGES OF PLANAR JUNCTIONS IN NONPUNCHTHROUGH AND PUNCHTHROUGH CASES

      I.E.E.E. transactions on electron devices
    49. LEE BH; YUN CM; KIM HS; HAN MK; CHOI YI
      LATCH-UP SUPPRESSED INSULATED GATE BIPOLAR-TRANSISTOR BY THE DEEP P(-IMPLANTATION UNDER THE N(+) SOURCE() ION)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. HWANG SK; CHOI YI; CHUNG SK; LEE K; KIM CK
      A POWER MOSFET DESIGN METHODOLOGY CONSIDERING EPI PARAMETER VARIATIONS

      IEEE transactions on semiconductor manufacturing
    51. LEE SK; OH CH; KIM YS; PARK JS; CHOI YI; JANG J; HAN MK
      ANNEALING EFFECTS OF LOW-PRESSURE MERCURY AND EXCIMER-LASER LIGHT ON DEGRADED A-SI-H TFTS

      Journal of non-crystalline solids
    52. KANG BR; YOON SN; CHO YH; CHA SI; CHOI YI
      INCREASED BREAKDOWN VOLTAGE OF SILICON-ON-INSULATOR SCHOTTKY DIODES

      Electronics Letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/10/20 alle ore 00:55:59