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La ricerca find articoli where authors phrase all words ' CLAVERIE A' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 67 riferimenti
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    1. Aspar, B; Moriceau, H; Jalaguier, E; Lagahe, C; Soubie, A; Biasse, B; Papon, AM; Claverie, A; Grisolia, J; Benassayag, G; Letertre, F; Rayssac, O; Barge, T; Maleville, C; Ghyselen, B
      The generic nature of the Smart-Cut((R)) process for thin film transfer

      JOURNAL OF ELECTRONIC MATERIALS
    2. Bonafos, C; Colombeau, B; Altibelli, A; Carrada, M; Assayag, GB; Garrido, B; Lopez, M; Perez-Rodriguez, A; Morante, JR; Claverie, A
      Kinetic study of group IV nanoparticles ion beam synthesized in SiO2

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    3. Cristiano, F; Colombeau, B; Grisolia, J; de Mauduit, B; Giles, F; Omri, M; Skarlatos, D; Tsoukalas, D; Claverie, A
      Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    4. Lopez, M; Garrido, B; Bonafos, C; Perez-Rodriguez, A; Morante, JR; Claverie, A
      Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO2

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    5. Grisolia, J; Cristiano, F; Ben Assayag, G; Claverie, A
      Kinetic aspects of the growth of platelets and voids in H implanted Si

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    6. Colombeau, B; Cristiano, F; Altibelli, A; Bonafos, C; Ben Assayag, G; Claverie, A
      Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

      APPLIED PHYSICS LETTERS
    7. Claverie, A; Colombeau, B; Ben Assayag, G; Bonafos, C; Cristiano, F; Omri, M; de Mauduit, B
      Thermal evolution of extended defects in implanted Si: impact on dopant diffusion

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    8. Cristiano, F; Colombeau, B; Claverie, A
      Energetics of extrinsic defects in Si and their role in nonequilibrium dopant diffusion

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    9. Puech, P; Toufella, M; Carles, R; Sirvin, R; Bedel, E; Fontaine, C; Stellmacher, M; Bisaro, R; Nagle, J; Claverie, A; Benassayag, G
      Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy

      JOURNAL OF PHYSICS-CONDENSED MATTER
    10. Alonso, G; Petranovskii, V; Del Valle, M; Cruz-Reyes, J; Licea-Claverie, A; Fuentes, S
      Preparation of WS2 catalysts by in situ decomposition of tetraalkylammonium thiotungstates

      APPLIED CATALYSIS A-GENERAL
    11. Lopez, R; Poblano, VM; Licea-Claverie, A; Avalos, M; Alvarez-Castillo, A; Castano, VM
      Alkaline surface modification of sugar cane bagasse

      ADVANCED COMPOSITE MATERIALS
    12. Lampin, E; Senez, V; Claverie, A
      Modelisation of extended defects to simulate the transient enhanced diffusion of boron

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Bonafos, C; Garrido, B; Lopez, M; Perez-Rodriguez, A; Morante, JR; Kihn, Y; Ben Assayag, G; Claverie, A
      Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Bogdanchikova, N; Petranovskii, V; Fuentes, S; Paukshtis, E; Sugi, Y; Licea-Claverie, A
      Role of mordenite acid properties in silver cluster stabilization

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    15. Skarlatos, D; Tsoukalas, D; Giles, LF; Claverie, A
      Point defect injection during nitrous oxidation of silicon at low temperatures

      JOURNAL OF APPLIED PHYSICS
    16. Grisolia, J; Cristiano, F; De Mauduit, B; Ben Assayag, G; Letertre, F; Aspar, B; Di Cioccio, L; Claverie, A
      Kinetic aspects of the growth of hydrogen induced platelets in SiC

      JOURNAL OF APPLIED PHYSICS
    17. Cristiano, F; Grisolia, J; Colombeau, B; Omri, M; de Mauduit, B; Claverie, A; Giles, LF; Cowern, NEB
      Formation energies and relative stability of perfect and faulted dislocation loops in silicon

      JOURNAL OF APPLIED PHYSICS
    18. Grisolia, J; Ben Assayag, G; Claverie, A; Aspar, B; Lagahe, C; Laanab, L
      A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si

      APPLIED PHYSICS LETTERS
    19. Bonafos, C; Garrido, B; Lopez, M; Perez-Rodriguez, A; Morante, JR; Kihn, Y; Ben Assayag, G; Claverie, A
      An electron microscopy study of the growth of Ge nanoparticles in SiO2

      APPLIED PHYSICS LETTERS
    20. Cowern, NEB; Mannino, G; Stolk, PA; Roozeboom, F; Huizing, HGA; van Berkum, JGM; Cristiano, F; Claverie, A; Jaraiz, M
      Cluster ripening and transient enhanced diffusion in silicon

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    21. Rangel, R; Galvan, DH; Adem, E; Morales, F; Licea-Claverie, A; Maple, MB
      Determination of the intragrain critical current density and thermogravimetric analysis on YBCO/Ag superconductors irradiated with Co-60 gamma rays

      JOURNAL OF SUPERCONDUCTIVITY
    22. Licea-Claverie, A; Carrillo, FJU; Alvarez-Castillo, A; Castano, VM
      Characterization of mixed fiber nylon composites incorporating composite scrap

      POLYMER COMPOSITES
    23. Cowern, NEB; Alquier, D; Omri, M; Claverie, A; Nejim, A
      Transient enhanced diffusion in preamorphized silicon: the role of the surface

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    24. Giles, LF; Omri, M; de Mauduit, B; Claverie, A; Skarlatos, D; Tsoukalas, D; Nejim, A
      Coarsening of end-of-range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    25. Claverie, A; Giles, LF; Omri, M; de Mauduit, B; Ben Assayag, G; Mathiot, D
      Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    26. Cristiano, F; Nejim, A; Suprun-Belevich, Y; Claverie, A; Hemment, PLF
      Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    27. Grisolia, J; de Mauduit, B; Gimbert, J; Billon, T; Ben Assayag, G; Bourgerette, C; Claverie, A
      TEM studies of the defects introduced by ion implantation in SiC

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    28. Ortiz, C; Grob, JJ; Mathiot, D; Claverie, A; Dubois, C; Jerisian, R
      Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    29. Cowern, NEB; Mannino, G; Stolk, PA; Roozeboom, F; Huizing, HGA; van Berkum, JGM; Cristiano, F; Claverie, A; Jaraiz, M
      Energetics of self-interstitial clusters in Si

      PHYSICAL REVIEW LETTERS
    30. Toufella, M; Puech, P; Carles, R; Bedel, E; Fontaine, C; Claverie, A; Benassayag, G
      Diameter of As clusters in LT-GaAs by Raman spectroscopy

      JOURNAL OF APPLIED PHYSICS
    31. Lampin, E; Senez, V; Claverie, A
      Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon

      JOURNAL OF APPLIED PHYSICS
    32. Skarlatos, D; Omri, M; Claverie, A; Tsoukalas, D
      Estimation of the number of interstitial atoms injected in silicon during thin oxide formation

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    33. CLAVERIE A; CASANOVE MJ
      TRANSMISSION ELECTRON-MICROSCOPY AND RELATED TECHNIQUES FOR SILICON-BASED MATERIALS CHARACTERIZATION

      Microelectronic engineering
    34. BONAFOS C; MATHIOT D; CLAVERIE A
      OSTWALD RIPENING OF END-OF-RANGE DEFECTS IN SILICON

      Journal of applied physics
    35. CRISTIANO F; BONAFOS C; NEJIM A; LOMBARDO S; OMRI M; ALQUIER D; MARTINEZ A; CAMPISANO SU; HEMMENT PLF; CLAVERIE A
      INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON )

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    36. RIDGWAY MC; BELAY KB; LLEWELLYN DJ; CLAVERIE A
      SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHISED GAAS IN THE PRESENCE OF IMPLANTATION-INDUCED MICROSCOPIC NONSTOICHIOMETRY

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    37. ASPAR B; BRUEL M; MORICEAU H; MALEVILLE C; POUMEYROL T; PAPON AM; CLAVERIE A; BENASSAYAG G; AUBERTONHERVE AJ; BARGE T
      BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS

      Microelectronic engineering
    38. BONAFOS C; OMRI M; DEMAUDUIT B; BENASSAYAG G; CLAVERIE A; ALQUIER D; MARTINEZ A; MATHIOT D
      TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS

      Journal of applied physics
    39. BONAFOS C; CLAVERIE A; ALQUIER D; BERGAUD C; MARTINEZ A; LAANAB L; MATHIOT D
      THE EFFECT OF THE BORON DOPING LEVEL ON THE THERMAL-BEHAVIOR OF END-OF-RANGE DEFECTS IN SILICON

      Applied physics letters
    40. LAPORTE A; SARRABAYROUSE G; BENAMARA M; CLAVERIE A; ROCHER A; PEYRELAVIGNE A
      CHARGED DEFECTS AT THE INTERFACE BETWEEN DIRECTLY BONDED SILICON-WAFERS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. BENAMARA M; ROCHER A; SOPENA P; CLAVERIE A; LAPORTE A; SARRABAYROUSE G; LESCOUZERES L; PEYRELAVIGNE A
      STRUCTURAL AND ELECTRICAL INVESTIGATIONS OF SILICON-WAFER BONDING INTERFACES

      Materials science & engineering. B, Solid-state materials for advanced technology
    42. FAYE MM; ALTIBELLI A; BONAFOS C; CLAVERIE A
      STOICHIOMETRIC DISTURBANCES IN MULTI-ATOMIC MULTILAYERED STRUCTURES DUE TO ION-IMPLANTATION THROUGH MASK OPENINGS

      Materials science & engineering. B, Solid-state materials for advanced technology
    43. OMRI M; BONAFOS C; CLAVERIE A; NEJIM A; CRISTIANO F; ALQUIER D; MARTINEZ A; COWERN NEB
      IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    44. CRISTIANO F; NEJIM A; DEMAUDUIT B; CLAVERIE A; HEMMENT PLF
      CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    45. BONAFOS C; ALQUIER D; MARTINEZ A; MATHIOT D; CLAVERIE A
      TED OF BORON IN THE PRESENCE OF EOR DEFECTS - THE USE OF THE THEORY OF OSTWALD RIPENING TO CALCULATE SI-INTERSTITIAL SUPERSATURATION IN THEVICINITY OF EXTRINSIC DEFECTS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    46. SIMON L; KUBLER L; BISCHOFF JL; BOLMONT D; FAURE J; CLAVERIE A; BALLADORE JL
      EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI

      Physical review. B, Condensed matter
    47. FAYE MM; VIEU C; BENASSAYAG G; SALLES P; CLAVERIE A
      LATERAL DAMAGE EXTENSION DURING MASKED ION-IMPLANTATION INTO GAAS

      Journal of applied physics
    48. DIANI M; MESLI A; KUBLER L; CLAVERIE A; BALLADORE JL; AUBEL D; PEYRE S; HEISER T; BISCHOFF JL
      OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    49. CLAVERIE A; LAANAB L; BONAFOS C; BERGAUD C; MARTINEZ A; MATHIOT D
      ON THE RELATION BETWEEN DOPANT ANOMALOUS DIFFUSION IN SI AND END-OF-RANGE DEFECTS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    50. LAANAB L; BERGAUD C; BONAFOS C; MARTINEZ A; CLAVERIE A
      VARIATION OF END-OF-RANGE DENSITY WITH ION-BEAM ENERGY AND THE PREDICTIONS OF THE EXCESS INTERSTITIALS MODEL

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    51. CLAVERIE A; FUJIOKA H; LAANAB L; LILIENTALWEBER Z; WEBER ER
      SYNTHESIS OF SEMIINSULATING GAAS BY AS IMPLANTATION AND THERMAL ANNEALING - STRUCTURAL AND ELECTRICAL-PROPERTIES

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    52. BONAFOS C; MARTINEZ A; FAYE MM; BERGAUD C; MATHIOT D; CLAVERIE A
      TRANSIENT ENHANCED DIFFUSION OF DOPANT IN PREAMORPHISED SI - THE ROLEOF EOR DEFECTS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    53. CLAVERIE A; FAURE J; BALLADORE JL; SIMON L; MESLI A; DIANI M; KUBLER L; AUBEL D
      A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY

      Journal of crystal growth
    54. PICHLER P; RYSSEL H; PLOSS R; BONAFOS C; CLAVERIE A
      PHOSPHORUS-ENHANCED DIFFUSION OF ANTIMONY DUE TO GENERATION OF SELF-INTERSTITIALS

      Journal of applied physics
    55. PIZANI PS; MLAYAH A; GROENEN J; CARLES R; CLAVERIE A
      HIGH-STRAIN EFFECTS EVIDENCED BY RAMAN-SCATTERING IN ARSENIC CLUSTERSIN AS-IMPLANTED GAAS

      Applied physics letters
    56. FAURE J; CLAVERIE A; LAANAB L; BONHOMME P
      RECRYSTALLIZATION OF BORON-DOPED AND UNDOPED PREAMORPHIZED SILICON LAYERS BY RAPID AND CONVENTIONAL THERMAL ANNEALING

      Materials science & engineering. B, Solid-state materials for advanced technology
    57. BENAMARA M; ROCHER A; LAANAB L; CLAVERIE A; LAPORTE A; SARRABAYROUSSE G; LESCOUZERES L; PEYRELAVIGNE A
      INTERFACIAL STRUCTURE OF BONDED SILICON O N SILICON-WAFERS

      Comptes rendus de l'Academie des sciences. Serie 2, Mecanique, physique, chimie, sciences de l'univers, sciences de la terre
    58. DEMAUDUIT B; LAANAB L; BERGAUD C; FAYE MM; MARTINEZ A; CLAVERIE A
      IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERSCREATED BY ION-BOMBARDMENT

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    59. ZHANG JP; WILSON RJ; HEMMENT PLF; CLAVERIE A; CRISTIANO F; SALLES P; WEN JQ; EVANS JH; PEAKER AR; PARKER GJ
      REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    60. LAANAB L; MARTINEZ A; ESSAID A; BONAFOS C; CLAVERIE A
      MINIMIZATION OF THE DENSITY OF EOR DEFECTS AFTER PREAMORPHISATION ANDTHERMAL ANNEALING

      Annales de chimie
    61. CLAVERIE A; NAMAVAR F; LILIENTALWEBER Z; DRESZER P; WEBER ER
      SEMIINSULATING GAAS MADE BY AS IMPLANTATION AND THERMAL ANNEALING

      Materials science & engineering. B, Solid-state materials for advanced technology
    62. CLAVERIE A; LILIENTALWEBER Z
      EXTENDED DEFECTS AND PRECIPITATES IN LT-GAAS, LT-INALAS AND LT-INP

      Materials science & engineering. B, Solid-state materials for advanced technology
    63. FAYE MM; VIEU C; LAANAB L; BEAUVILLAIN J; CLAVERIE A
      SIMULATION OF LATERAL AL RECOIL ATOMS AND DAMAGE DEFECTS GRADIENTS INA GAAS GAALAS QUANTUM-WELL CREATED BY MASKED ION-IMPLANTATION/

      Materials science & engineering. B, Solid-state materials for advanced technology
    64. NAMAVAR F; KALKHORAN NM; CLAVERIE A; LILIENTALWEBER Z; WEBER ER; SEKULAMOISE PA; VERNON S; HAVEN V
      LATERAL AND VERTICAL ISOLATION BY ARSENIC IMPLANTATION INTO MOCVD-GROWN GAAS-LAYERS

      Journal of electronic materials
    65. LILIENTALWEBER Z; NAMAVAR F; CLAVERIE A
      ARSENIC IMPLANTATION INTO GAAS - A SOI TECHNOLOGY FOR COMPOUND SEMICONDUCTORS

      Ultramicroscopy
    66. GARCIA JC; BOURGOIN JC; CLAVERIE A
      ELECTRICAL-PROPERTIES OF P-RICH INP GROWN BY GAS-SOURCE MBE

      Journal of crystal growth
    67. MESSAOUD AY; SCHEID E; SARRABAYROUSE G; CLAVERIE A; MARTINEZ A
      A COMPREHENSIVE STUDY OF THIN RAPID THERMAL OXIDE-FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 25/10/20 alle ore 02:25:40