Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' Bonnaud, O' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 51 riferimenti
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    1. Le Bihan, F; Carvou, E; Fortin, B; Rogel, R; Salaun, AC; Bonnaud, O
      Realization of polycrystalline silicon magnetic sensors

      SENSORS AND ACTUATORS A-PHYSICAL
    2. Pichon, L; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Kis-Sion, K; Briand, D; Bonnaud, O
      Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    3. Viana, CE; da Silva, ANR; Morimoto, NI; Bonnaud, O
      Analysis of SiO2 thin films deposited by PECVD using an oxygen-TEOS-argon mixture

      BRAZILIAN JOURNAL OF PHYSICS
    4. Helen, Y; Dassow, R; Nerding, M; Mourgues, K; Raoult, F; Kohler, JR; Mohammed-Brahim, T; Rogel, R; Bonnaud, O; Werner, JH; Strunk, HP
      High mobility thin film transistors by Nd : YVO4-laser crystallization

      THIN SOLID FILMS
    5. Mercha, A; Pichon, L; Carin, R; Mourgues, K; Bonnaud, O
      Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise

      THIN SOLID FILMS
    6. Toutah, H; Llibre, JF; Tala-Ighil, B; Mohammed-Brahim, T; Helen, Y; Gautier, G; Bonnaud, O
      Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating

      MICROELECTRONICS RELIABILITY
    7. Rey-Tauriac, Y; Taurin, M; Bonnaud, O
      Wafer level accelerated test for ionic contamination control on VDMOS transistors in bipolar/CMOS/DMOS

      MICROELECTRONICS RELIABILITY
    8. Gagnard, X; Rey-Tauriac, Y; Bonnaud, O
      Polysilicon oxide quality optimization at wafer level of a Bipolar/CMOS/DMOS technology

      MICROELECTRONICS RELIABILITY
    9. Rey-Tauriac, Y; Taurin, M; Bonnaud, O
      High reliability power VDMOS transistors in bipolar/CMOS/DMOS technology

      MICROELECTRONICS RELIABILITY
    10. Mercha, A; Vandamme, LKJ; Pichon, L; Carin, R; Bonnaud, O
      Current crowding and 1/f noise in polycrystalline silicon thin film transistors

      JOURNAL OF APPLIED PHYSICS
    11. Outaleb, N; Pinel, J; Drissi, M; Bonnaud, O
      Microwave planar antenna with RF-sputtered indium tin oxide films

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    12. Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH
      Laser crystallization of silicon for high-performance thin-film transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    13. Toutah, H; Llibre, JF; Tala-Ighil, B; Mohammed-Brahim, T; Mourgues, K; Helen, Y; Raoult, F; Bonnaud, O
      Stability of polysilicon thin film transistors under switch operating

      MICROELECTRONICS RELIABILITY
    14. Viana, CE; Morimoto, NI; Bonnaud, O
      Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O-2 mixture

      MICROELECTRONICS RELIABILITY
    15. da Silva, ANR; Morimoto, NI; Bonnaud, O
      Tetraethylorthosilicate SiO2 films deposited at a low temperature

      MICROELECTRONICS RELIABILITY
    16. Mercha, A; Rhayem, J; Pichon, L; Valenza, M; Routoure, JM; Carin, R; Bonnaud, O; Rigaud, D
      Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors

      MICROELECTRONICS RELIABILITY
    17. Guillet, D; Sarret, M; Haji, L; Rogel, R; Bonnaud, O
      Crystallization of amorphous silicon-germanium films deposited by low pressure chemical vapor deposition

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    18. Rogel, R; Sarret, M; Mohammed-Brahim, T; Bonnaud, O; Kleider, JP
      High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    19. Pichon, L; Mercha, A; Carin, R; Bonnaud, O; Mohammed-Brahim, T; Helen, Y; Rogel, R
      Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors

      APPLIED PHYSICS LETTERS
    20. Tala-Ighil, B; Rahal, A; Mourgues, K; Toutah, A; Pichon, L; Mohammed-Brahim, T; Raoult, F; Bonnaud, O
      State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

      THIN SOLID FILMS
    21. Helen, Y; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Bonnaud, O; Rogel, R; Prochasson, S; Boher, P; Zahorski, D
      Single shot excimer laser crystallization and LPCVD silicon TFTs

      THIN SOLID FILMS
    22. Gagnard, X; Taurin, M; Bonnaud, O
      New rapid method for lifetime determination of gate oxide validated with Bipolar/CMOS/DMOS technology

      MICROELECTRONICS RELIABILITY
    23. Ogier-Monnier, K; Boivin, P; Bonnaud, O
      Reliability improvement of EEPROM by using WSi2 polycide gate

      MICROELECTRONICS RELIABILITY
    24. GAILLARD T; LHERMITE H; BONNAUD O; KISSION K
      CALIBRATION OF POLYCRYSTALLINE SILICON DEPOSITION AND ETCHING MACHINEINSIDE A TECHNOLOGICAL SIMULATOR

      Computational materials science
    25. TALAIGHIL B; TOUTAH H; RAHAL A; MOURGUES K; PICHON L; RAOULT F; BONNAUD O; MOHAMMEDBRAHIM T
      GATE BIAS STRESS IN HYDROGENATED AND UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS

      Microelectronics and reliability
    26. MOHAMMEDBRAHIM T; KISSION K; BRIAND D; SARRET M; BONNAUD O; KLEIDER JP; LONGEAUD C; LAMBERT B
      FROM AMORPHOUS TO POLYCRYSTALLINE THIN-FILMS - DEPENDENCE ON ANNEALING TIME OF STRUCTURAL AND ELECTRONIC-PROPERTIES

      Journal of non-crystalline solids
    27. MOHAMMEDBRAHIM T; SARRET M; BRIAND D; KISSION K; HAJI L; BONNAUD O; LOUER D; HADJAJ A
      EFFECT OF THE STARTING AMORPHOUS STRUCTURE ON THE SOLID-PHASE CRYSTALLIZATION OF SILICON

      Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic
    28. HBIB H; BONNAUD O; LHERMITE H; MENKASSI A
      DEEP LEVELS IN AU-POXNYINZ-(N)INP MIS STR UCTURES EVALUATED BY FTDLTSTECHNIQUE

      Journal de physique. III
    29. LUCAS S; KISSION K; PINEL J; BONNAUD O
      POLYSILICON CANTILEVER BEAM USING SURFACE MICROMACHINING TECHNOLOGY FOR APPLICATION IN MICROSWITCHES

      Journal of micromechanics and microengineering
    30. HBIB H; BONNAUD O
      ELECTRICAL-CONDUCTION IN POXNYINZ FILMS DEPOSITED ON INP

      Philosophical magazine letters
    31. HBIB H; BONNAUD O; FORTIN B
      ELECTRICAL CHARACTERISTICS OF (N)-INP MIS DIODES WITH A POXNY INTERFACIAL LAYER DEPOSITED AT LOW-TEMPERATURE

      Semiconductor science and technology
    32. HBIB H; BONNAUD O; GAUNEAU M; HAMEDI L; MARCHAND R; QUEMERAIS A
      CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES

      Thin solid films
    33. LEBIHAN F; FORTIN B; CAUNEAU S; BRIAND D; BONNAUD O
      CHARACTERIZATION OF UNINTENTIONALLY OR LIGHTLY DOPED POLYSILICON FILMS BY IMPROVED HALL-EFFECT MEASUREMENTS

      Thin solid films
    34. KISSION K; MOHAMMEDBRAHIM T; BRIAND D; SARRET M; LEBIHAN F; FORTIN B; BONNAUD O; BOHER P; STEHLE M; STEHLE JL
      SINGLE-SHOT EXCIMER-LASER CRYSTALLIZATION OF SILICON FILMS DEPOSITED BY LPCVD

      Thin solid films
    35. PICHON L; RAOULT F; MOURGUES K; KISSION K; MOHAMMEDBRAHIM T; BONNAUD O
      LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600 DEGREES-C) UNHYDROGENATED IN-SITU DOPED POLYSILICON THIN-FILM TRANSISTORS - TOWARDS A TECHNOLOGYFOR FLAT-PANEL DISPLAYS

      Thin solid films
    36. LOHEAC JL; RAOULT F; BONNAUD O; TAURIN M
      ANALYSIS FOR THE RELIABILITY OF THE INTRINSIC BASE ION-IMPLANTATION OF A 3 GHZ I(2)L BIPOLAR PROCESS FROM THE MEASURE OF INTEGRATED RESISTANCES - FROM THE RESULTS, SETTING OF RULES FOR AN EXPERT-SYSTEM

      Microelectronics and reliability
    37. HBIB H; BONNAUD O; QUEMERAIS A; GAUNEAU M; ADAM JL; MARCHAND R
      PREPARATION AND CHARACTERIZATION OF PHOSP HORUS OXINITRIDE THIN-FILMSFOR INP PASSIVATION

      Journal de physique. III
    38. PICHON L; RAOULT F; MOHAMEDBRAHIM T; BONNAUD O; SEHIL H
      EFFECTS OF THE IN-SITU DRAIN DOPING ON HOT-CARRIER DEGRADATION IN POLYSILICON THIN-FILM TRANSISTORS

      Solid-state electronics
    39. HBIB H; QUAN DT; BONNAUD O; MENKASSI A
      INTERFACIAL ELECTRICAL-PROPERTIES OF POXNYINZ N-INP/

      Physica status solidi. a, Applied research
    40. MOHAMMEDBRAHIM T; SARRET M; BRIAND D; KISSION K; BONNAUD O; HADJAJ A
      POLYCRYSTALLINE SILICON CHARACTERISTICS DEPENDENCE ON STARTING AMORPHOUS MATERIAL

      Journal de physique. IV
    41. PICHON L; RAOULT F; BONNAUD O; PINEL J; SARRET M
      LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS HAVING IN-SITU DOPED POLYSILICON SOURCE AND DRAIN CONTACTS

      IEEE electron device letters
    42. BRIAND D; SARRET M; LEBIHAN F; BONNAUD O; PICHON L
      POLYSILICON IN-SITU PHOSPHORUS DOPING CONTROL OVER LARGE CONCENTRATION RANGE USING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION GROWTH-PROCESS

      Materials science and technology
    43. PICHON L; RAOULT F; BONNAUD O
      COMPARISON OF THE LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS (TFTS) WITH 2 KINDS OF GATE DIELECTRICS

      Materials chemistry and physics
    44. SION KK; PINEL J; DOLLE V; PICHON L; BONNAUD O
      OPTIMIZATION OF SILICA DEPOSITION BY SPUTTERING IN THE SILICON THIN-FILM TRANSISTORS REALIZATION IN LOW-TEMPERATURE TECHNOLOGY

      Microelectronic engineering
    45. PICHON L; RAOULT F; BONNAUD O; SEHIL H; BRIAND D
      CONDUCTION BEHAVIOR OF LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON TFTS WITH AN IN-SITU DRAIN DOPING LEVEL

      Solid-state electronics
    46. BONNAUD O; CITERNE J
      MICROELECTRONICS PROGRAMS IN COLLEGES AND UNIVERSITIES

      Onde electrique
    47. AZIZ A; LHERMITE H; RAOULT F; BONNAUD O
      REALIZATION IN CLEAN ROOM AND ELECTRICAL CHARACTERIZATION OF MICROELECTRONIC DEVICES BY DESS STUDENTS

      Onde electrique
    48. SARRET M; LIBA A; BONNAUD O; LEBIHAN F; FORTIN B; PICHON L; RAOULT F
      IN-SITU PHOSPHORUS-DOPED VLPCVD POLYSILICON LAYERS FOR POLYSILICON THIN-FILM TRANSISTORS

      IEE proceedings. Part G. Circuits, devices and systems
    49. AZIZ A; BONNAUD O; LHERMITE H; RAOULT F
      LATERAL POLYSILICON PN DIODES - CURRENT-VOLTAGE CHARACTERISTICS SIMULATION BETWEEN 200-K AND 400-K USING A NUMERICAL APPROACH

      I.E.E.E. transactions on electron devices
    50. SARRET M; LIBA A; BONNAUD O; LEBIHAN F; FORTIN B
      COMPARISON OF PHYSICAL AND ELECTRICAL-PROPERTIES OF ULPCVD AND VLPCVDIN-SITU PHOSPHORUS-DOPED POLYSILICON OR UNDOPED POLYSILICON

      Journal de physique. IV
    51. SEHIL H; RAOULT F; COLIN Y; BONNAUD O
      EFFECT OF THE ACTIVE LAYER THICKNESS ON THE LEAKAGE CURRENT IN P+P P+ACCUMULATION POLYCRYSTALLINE SILICON TFTS

      Materials chemistry and physics


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/01/21 alle ore 07:28:47