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    1. Bischoff, JL; Pirri, C; Dentel, D; Simon, L; Bolmont, D; Kubler, L
      AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    2. Louis, P; Angot, T; Bolmont, D; Gewinner, G
      Pairing mechanism in interaction of atomic hydrogen with epitaxial erbium silicide

      SURFACE SCIENCE
    3. Dentel, D; Bischoff, JL; Kubler, L; Bolmont, D
      Role of hydrogen during Si capping of strained Ge or Si1-xGex hut clusters

      THIN SOLID FILMS
    4. DENTEL D; BISCHOFF JJ; BOLMONT D; KUBLER L
      REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI GROWTH ON GE(001) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

      Surface science
    5. SCHIEFFER P; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      STABILIZATION OF A FACE-CENTERED-CUBIC MN STRUCTURE WITH THE AG LATTICE-PARAMETER

      Journal of magnetism and magnetic materials
    6. HONG S; PIRRI C; WETZEL P; BOLMONT D; GEWINNER G; BOUKARI S; BEAUREPAIRE E
      MAGNETOOPTIC KERR-EFFECT MEASUREMENTS ON FE3-XCOXSI LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.5) EPITAXIALLY STABILIZED ON SI(111)

      Journal of magnetism and magnetic materials
    7. CHELLY R; ANGOT T; LOUIS P; BOLMONT D; KOULMANN JJ
      IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE

      Applied surface science
    8. MOEGLIN JP; GAUTIER B; JOECKLE R; BOLMONT D
      ELECTRICAL BEHAVIOR OF LASER-DAMAGED SILICON PHOTODIODES

      Optics and lasers in engineering
    9. CHELLY R; WERCKMANN J; ANGOT T; LOUIS P; BOLMONT D; KOULMANN JJ
      GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Thin solid films
    10. STAUFFER L; MHARCHI A; SAINTENOY S; PIRRI C; WETZEL P; BOLMONT D; GEWINNER G
      VACANCY-INDUCED ELECTRONIC STATES IN ERSI1.7(0001)

      Journal of physics and chemistry of solids
    11. AUBEL D; KUBLER L; BISCHOFF JL; SIMON L; BOLMONT D
      X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)

      Applied surface science
    12. BERLING D; DELVECCHIO A; ACQUAVIVA S; BOLMONT D; LEGGIERI G; LOEGEL B; DEGIORGI ML; LUCHES A; MEHDAOUI A; TAPFER L
      REACTIVE LASER DEPOSITION OF HIGH-QUALITY YBACUO AND ERBACUO FILMS

      Applied surface science
    13. SIMON L; KUBLER L; BISCHOFF JL; BOLMONT D; FAURE J; CLAVERIE A; BALLADORE JL
      EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI

      Physical review. B, Condensed matter
    14. STOEHR M; AUBEL D; JUILLAGUET S; BISCHOFF JL; KUBLER L; BOLMONT D; HAMDANI F; FRAISSE B; FOURCADE R
      PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)

      Physical review. B, Condensed matter
    15. SCHIEFFER P; ROUYER D; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      CRYSTALLOGRAPHIC AND ELECTRONIC-STRUCTURE OF CU CR/CU(001) SANDWICHES/

      Thin solid films
    16. ANGOT T; KOULMANN JJ; BOLMONT D; GEWINNER G
      FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS

      Surface science
    17. WETZEL P; SAINTENOY S; PIRRI C; BOLMONT D; GEWINNER G; ROGE TP; PALMINO F; SAVALL C; LABRUNE JC
      STM INVESTIGATION OF 2-DIMENSIONAL AND 3-DIMENSIONAL ER DISILICIDE GROWN EPITAXIALLY ON SI(111)

      Surface science
    18. ANGOT T; BOLMONT D; KOULMANN JJ
      HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE

      Surface science
    19. HONG S; SONNET P; STAUFFER L; WETZEL P; GEWINNER G; BOLMONT D; PIRRI C
      FORMATION OF EPITAXIAL COSIX SILICIDE AT THE CO COSI2(111) INTERFACE STUDIED BY PHOTOEMISSION AND BAND-STRUCTURE CALCULATIONS/

      Surface science
    20. ROGE TP; PALMINO F; SAVALL C; LABRUNE JC; SAINTENOY S; WETZEL P; PIRRI C; BOLMONT D; GEWINNER G
      INITIAL GROWTH MODE OF ER SILICIDE ON SI(111) BY SOLID-PHASE EPITAXY

      Surface science
    21. AUBEL D; KUBLER L; BISCHOFF JL; BOLMONT D
      GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1

      Surface science
    22. SCHIEFFER P; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      INITIAL-STAGES OF GROWTH OF MN ON AG(100) STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION AND VALENCE-BAND PHOTOEMISSION

      Surface science
    23. SAINTENOY S; WETZEL P; PIRRI C; BOLMONT D; GEWINNER G
      INTERACTION OF H WITH EPITAXIAL ER SILICIDE LAYERS ON SI(111) - ADSORPTION VERSUS ABSORPTION

      Surface science
    24. SAINTENOY S; WETZEL P; PIRRI C; BOLMONT D; GEWINNER G
      OBSERVATION OF A TEMPORAL EVOLUTION OF DEFECTED EPITAXIAL ERBIUM SILICIDE LAYERS AT ROOM-TEMPERATURE

      Solid state communications
    25. SCHIEFFER P; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      INITIAL GROWTH AND STRUCTURE OF MN ON AG(100) - FORMATION OF A SUPERFICIAL ALLOY

      Solid state communications
    26. BERLING D; BOLMONT D; LOEGEL B; MEHDAOUI A
      AC SUSCEPTIBILITY OF HTSC IN THE LOW-FIELD LIMIT

      Solid state communications
    27. MHARCHI A; STAUFFER L; SAINTENOY S; PIRRI C; WETZEL P; BOLMONT D; GEWINNER G
      SURFACE ATOMIC-STRUCTURE AND SYMMETRY PROPERTIES OF ERSI1.7 ON SI(111)

      Solid state communications
    28. MEHDAOUI A; BERLING D; BOLMONT D; LOEGEL B
      ACTIVATION-ENERGIES IN SUPERCONDUCTING HIGH-TEMPERATURE CERAMICS

      Materials science & engineering. B, Solid-state materials for advanced technology
    29. HONG S; PIRRI C; WETZEL P; BOLMONT D; GEWINNER G
      MEDIUM-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDY OF PSEUDOMORPHIC FE SILICIDES GROWN ON SI(111) EVIDENCE OF FE VACANCY FORMATION

      Applied surface science
    30. STAUFFER L; MHARCHI A; SAINTENOY S; PIRRI C; WETZEL P; BOLMONT D; GEWINNER G
      SURFACE ELECTRONIC AND ATOMIC-STRUCTURE OF ERSI1.7 ON SI(111)

      Physical review. B, Condensed matter
    31. PIRRI C; TUILIER MH; WETZEL P; HONG S; BOLMONT D; GEWINNER G; CORTES R; HECKMANN O; VONKANEL H
      IRON ENVIRONMENT IN PSEUDOMORPHIC IRON SILICIDES EPITAXIALLY GROWN ONSI(111)

      Physical review. B, Condensed matter
    32. STAUFFER L; EZZEHAR H; BOLMONT D; CHELLY R; KOULMANN JJ; MINOT C
      CHEMISORPTION OF ATOMIC-HYDROGEN ON THE SI(111)7X7 RECONSTRUCTED SURFACE AT LOW-COVERAGE

      Surface science
    33. ROUYER D; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      INITIAL GROWTH MODE OF CR ON CU(100) AND AG(100) - A COMPARISON

      Surface science
    34. KOULMANN JJ; STEINMETZ D; VAN S; RINGEISEN F; BOLMONT D
      INTERACTION OF GEH4 WITH THE GE(100)2X1 SURFACE

      Surface science
    35. SAINTENOY S; WETZEL P; PIRRI C; BOLMONT D; GEWINNER G
      SURFACE ELECTRONIC-STRUCTURE OF EPITAXIAL ROOT-3X-ROOT-3 R30-DEGREES ER SILICIDE ON SI(111)

      Surface science
    36. ROUYER D; KREMBEL C; HANF MC; PERUCHETTI JC; BOLMONT D; GEWINNER G
      METASTABLE FILM GROWTH OF CR ON CU(001)

      Surface science
    37. SAINTENOY S; WETZEL P; PIRRI C; PERUCHETTI JC; BOLMONT D; GEWINNER G
      HYDROGEN ADSORPTION ON ERBIUM SILICIDE SURFACE

      Solid state communications
    38. WETZEL P; SAINTENOY S; PIRRI C; BOLMONT D; GEWINNER G
      SYMMETRY PROPERTIES OF THE ERSI(1.7)-VALENCE BAND STATES

      Solid state communications
    39. AUBEL D; DIANI M; KUBLER L; BISCHOFF JL; BOLMONT D
      SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES

      Journal of non-crystalline solids
    40. HONG S; WETZEL P; GEWINNER G; BOLMONT D; PIRRI C
      FORMATION OF EPITAXIAL 1-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SILICIDES ON SI(111)(X (0)

      Journal of applied physics
    41. CHELLY R; ANGOT T; BOLMONT D; KOULMANN JJ
      GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES

      Applied physics letters
    42. AUBEL D; DIANI M; STOEHR M; BISCHOFF JL; KUBLER L; BOLMONT D; FRAISSE B; FOURCADE R; MULLER D
      IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY

      Journal de physique. III
    43. AUBEL D; DIANI M; BISCHOFF JL; BOLMONT D; KUBLER L
      STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    44. DIANI M; MANSOUR A; KUBLER L; BISCHOFF JL; BOLMONT D
      SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION

      DIAMOND AND RELATED MATERIALS
    45. DIANI M; MANSOUR A; KUBLER L; BISCHOFF JL; BOLMONT D
      SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION - REPLY

      DIAMOND AND RELATED MATERIALS
    46. RINGEISEN F; STEINMETZ D; VAN S; BOLMONT D; KOULMANN JJ
      GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/

      Materials science & engineering. B, Solid-state materials for advanced technology
    47. BERLING D; BOLMONT D; MEHDAOUI A; LOEGEL B
      A COMPARATIVE-STUDY OF INTERGRANULAR PINNING STRENGTHS IN HIGH-TEMPERATURE SUPERCONDUCTORS

      Physica. C, Superconductivity
    48. VAN S; STEINMETZ D; BOLMONT D; KOULMANN JJ
      EFFECT OF ANNEALING ON A GE THIN-FILM ON A SI(111)7X7 SURFACE - A STUDY USING ARUPS, XPD, AND LEED

      Physical review. B, Condensed matter
    49. TUILIER MH; WETZEL P; PIRRI C; BOLMONT D; GEWINNER G
      INTERFACIAL STRUCTURE OF 2-DIMENSIONAL EPITAXIAL ER SILICIDE ON SI(111)

      Physical review. B, Condensed matter
    50. WETZEL P; SAINTENOY S; PIRRI C; BOLMONT D; GEWINNER G
      SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111)

      Physical review. B, Condensed matter
    51. WETZEL P; SAINTENOY S; PIRRI C; BOLMONT D; GEWINNER G
      SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111)

      Physical review. B, Condensed matter
    52. DIANI M; AUBEL D; BISCHOFF JL; KUBLER L; BOLMONT D
      ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION

      Thin solid films
    53. STEINMETZ D; VAN S; RINGEISEN F; BOLMONT D; KOULMANN JJ
      THERMAL AND CATALYTIC DECOMPOSITION OF SI2H6 ON A GE(100)2X1 SURFACE - PHOTOEMISSION AND LEED STUDIES

      Surface science
    54. STAUFFER L; VAN S; BOLMONT D; KOULMANN JJ; MINOT C
      1ST STAGES OF GE ADSORPTION ON THE SI(111)7X7 SURFACE - EXPERIMENTAL AND THEORETICAL-STUDIES

      Surface science
    55. ROUYER D; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      EPITAXY OF THIN CR LAYERS ON CU(001)

      Surface science
    56. MEHDAOUI A; BOLMONT D; DANESI P; BOURGAULT D; LOEGEL B
      INFLUENCE OF PROCESSING ON THE LOW-FIELD MAGNETIC PHASE-DIAGRAM OF HIGH-TEMPERATURE SUPERCONDUCTORS

      Superconductor science and technology
    57. MEHDAOUI A; DANESI P; BOLMONT D; BOURGAULT D; LOEGEL B
      IRREVERSIBILITY AND CRITICAL LINES IN TEXTURED HIGH-TEMPERATURE SUPERCONDUCTORS - EFFECTS OF PROCESSING ON THE MAGNETIC PHASE-DIAGRAM

      Journal of alloys and compounds
    58. LOEGEL B; MEHDAOUI A; BOLMONT D; DANESI P; BOURGAULT D; TOURNIER R
      IRREVERSIBILITY LINE AND ANISOTROPY OF MAGNETIC MELT-TEXTURED Y1BA2CU3O7-DELTA STUDIED BY AC SUSCEPTIBILITY

      Physica. C, Superconductivity
    59. KAFADER U; TUILIER MH; PIRRI C; WETZEL P; GEWINNER G; BOLMONT D; HECKMANN O; CHANDESRIS D; MAGNAN H
      FORMATION OF EPITAXIAL CSCL-TYPE IRON SILICIDE ON SI(111)

      Europhysics letters
    60. LUTZ F; BISCHOFF JL; KUBLER L; BOLMONT D
      AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE THERMAL-OXIDATION AND NITRIDATION OF SI(100)-2X1 BY NO2

      Applied surface science
    61. DIANI M; BISCHOFF JL; KUBLER L; BOLMONT D
      X-RAY PHOTOELECTRON DIFFRACTION OBSERVATION OF BETA-SIC(001) OBTAINEDBY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED GROWTH ON SI(001)

      Applied surface science
    62. STAUFFER L; MHARCHI A; PIRRI C; WETZEL P; BOLMONT D; GEWINNER G; MINOT C
      ELECTRONIC-STRUCTURE AND INTERFACIAL GEOMETRY OF EPITAXIAL 2-DIMENSIONAL ER SILICIDE ON SI(111)

      Physical review. B, Condensed matter
    63. BISCHOFF JL; KUBLER L; BOLMONT D; SEBENNE CA; LACHARME JP; BONNET JE; HRICOVINI K
      A PHOTOEMISSION-STUDY OF AMMONIA ADSORPTION ON SI(100)2X1 AND SI(111)2X1 SURFACES

      Surface science
    64. DIANI M; AUBEL D; BISCHOFF JL; KUBLER L; BOLMONT D
      THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION

      Surface science
    65. ROUYER D; KREMBEL C; HANF MC; BOLMONT D; GEWINNER G
      X-RAY PHOTOELECTRON DIFFRACTION FROM ULTRA-THIN CR LAYERS ON AU(100) AND AG(100) - A COMPARISON

      Surface science
    66. DIANI M; BISCHOFF JL; KUBLER L; BOLMONT D
      X-RAY PHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION PROBING OF GE HETEROEPITAXY ON SI (001) 2X1

      Journal of applied physics


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Documento generato il 26/10/20 alle ore 15:09:45