Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' BALLADORE JL' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 11 riferimenti
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    1. GERARD P; OUABBOU A; BALLADORE JL; MARTINEZ JP
      EXPERIMENTAL AND THEORETICAL-STUDY OF COR RELATED ENERGETIC AND ANGULAR-DISTRIBUTIONS OF ELECTRONS BACKSCATTERED BY GOLD AND SILICON TARGETIN A SCANNING ELECTRON-MICROSCOPE

      Journal de physique. III
    2. SIMON L; KUBLER L; GROENEN J; BALLADORE JL
      3RD-NEAREST-NEIGHBOR CARBON PAIRS IN EPITAXIAL SI1-YCY ALLOYS - LOCALORDER FOR CARBON IN SILICON CHARACTERIZED BY X-RAY PHOTOELECTRON DIFFRACTION AND RAMAN-SPECTROSCOPY

      Physical review. B, Condensed matter
    3. SIMON L; AUBEL D; KUBLER L; BISCHOFF JL; GEWINNER G; BALLADORE JL
      A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001)

      Journal of applied physics
    4. BURY P; ENNODE N; PETIT JM; BENDJOYA P; MARTINEZ JP; PINNA H; JAUD J; BALLADORE JL
      WAVELET ANALYSIS OF X-RAY SPECTROSCOPIC DATA .1. THE METHOD

      Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
    5. SIMON L; FAURE J; MESLI A; HEISER T; GROB JJ; BALLADORE JL
      XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    6. SIMON L; KUBLER L; BISCHOFF JL; BOLMONT D; FAURE J; CLAVERIE A; BALLADORE JL
      EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI

      Physical review. B, Condensed matter
    7. DIANI M; MESLI A; KUBLER L; CLAVERIE A; BALLADORE JL; AUBEL D; PEYRE S; HEISER T; BISCHOFF JL
      OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    8. GERARD P; BALLADORE JL; MARTINEZ JP; OUABBOU A
      EXPERIMENTAL-DETERMINATION OF ANGULAR-ENERGY DISTRIBUTIONS OF ELECTRONS BACKSCATTERED BY BULK GOLD AND SILICON SAMPLES

      Scanning
    9. CLAVERIE A; FAURE J; BALLADORE JL; SIMON L; MESLI A; DIANI M; KUBLER L; AUBEL D
      A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY

      Journal of crystal growth
    10. OUABBOU A; MARTINEZ JP; LALANNE F; GERARD P; BALLADORE JL
      PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY IN SAL-601 RESISTS ON A SI-SIO2-SI SUBSTRATE

      Microelectronic engineering
    11. AZEMA N; DURAND J; BERJOAN R; DUPUY C; BALLADORE JL; COT L
      PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF A1N (10(1)OVER-BAR-0) ONSI (100) - MICROSTRUCTURAL STUDY OF THE INTERLAYERS

      Journal of crystal growth


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/10/20 alle ore 17:07:35