Per ulteriori informazioni selezionare i riferimenti di interesse.
Stress effects on defects and dopant diffusion in Si
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Comparison of mechanical properties of Ni3Al thin films in disordered FCC and ordered L1(2) phases
ACTA MATERIALIA
Modelling a growth instability in a stressed solid
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
Dynamics of pattern formation during low-energy ion bombardment of Si(001)
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Ion-beam sculpting at nanometre length scales
NATURE
Evolution of nanoporosity in dealloying
NATURE
Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si
APPLIED PHYSICS LETTERS
Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pbmonolayer
APPLIED PHYSICS LETTERS
Complete experimental test of kinetic models for rapid alloy solidification
ACTA MATERIALIA
Atomistic simulations of solid-phase epitaxial growth in silicon
PHYSICAL REVIEW B
Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Nonclassical smoothening of nanoscale surface corrugations
PHYSICAL REVIEW LETTERS
Morphological instability of growth fronts due to stress-induced mobility variations
APPLIED PHYSICS LETTERS
Stoichiometry issues in pulsed-laser deposition of alloys grown from multicomponent targets
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Alloy corrosion
MRS BULLETIN
Parameter-free test of alloy dendrite-growth theory
PHYSICAL REVIEW B-CONDENSED MATTER
Spontaneous pattern formation on ion bombarded Si(001)
PHYSICAL REVIEW LETTERS
Self-diffusivity of liquid silicon measured by pulsed laser melting
JOURNAL OF APPLIED PHYSICS
Activation volume for antimony diffusion in silicon and implications for strained films
APPLIED PHYSICS LETTERS
Activation volume for boron diffusion in silicon and implications for strained films
APPLIED PHYSICS LETTERS
AMORPHOUS-CRYSTAL INTERFACE IN SILICON - A TIGHT-BINDING SIMULATION
Physical review. B, Condensed matter
EXPERIMENTAL TEST OF MORPHOLOGICAL STABILITY THEORY FOR A PLANAR INTERFACE DURING RAPID SOLIDIFICATION
Physical review. B, Condensed matter
KINETICALLY DRIVEN GROWTH INSTABILITY IN STRESSED SOLIDS
Physical review letters
PRESSURE MEASUREMENT AT HIGH-TEMPERATURE USING 10 SM-YAG FLUORESCENCEPEAKS
Journal of applied physics
EXPERIMENTAL CONSTRAINTS ON NONEQUILIBRIUM INTERFACE KINETIC-MODELS
Materials science & engineering. A, Structural materials: properties, microstructure and processing
DENDRITIC GROWTH VELOCITY AND DIFFUSIVE SPEED IN SOLIDIFICATION OF UNDERCOOLED DILUTE NI-ZR MELTS
Materials science & engineering. A, Structural materials: properties, microstructure and processing
MORPHOLOGICAL EQUILIBRATION OF RIPPLED AND DIMPLED CRYSTAL-SURFACES -THE ROLE OF TERRACE-WIDTH FLUCTUATIONS
Surface science
VANISHING ATOMIC MIGRATION BARRIER IN SIO2
Nature
THERMODYNAMICS OF DIFFUSION UNDER PRESSURE AND STRESS - RELATION TO POINT-DEFECT MECHANISMS
Applied physics letters
INTERFACE ATTACHMENT KINETICS IN ALLOY SOLIDIFICATION
Metallurgical and materials transactions. A, Physical metallurgy andmaterials science
ANOMALOUS DIFFUSION OF FE IN LIQUID AL MEASURED BY THE PULSED-LASER TECHNIQUE
Metallurgical and materials transactions. A, Physical metallurgy andmaterials science
ACTIVATION VOLUME FOR ARSENIC DIFFUSION IN GERMANIUM
Applied physics letters
ION-BEAM SYNTHESIS AND STABILITY OF GAAS NANOCRYSTALS IN SILICON (VOL68, PG 2389, 1996)
Applied physics letters
PRESSURE-ENHANCED INTERDIFFUSION IN AMORPHOUS SI GE MULTILAYERS/
Applied physics letters
ION-BEAM SYNTHESIS AND STABILITY OF GAAS NANOCRYSTALS IN SILICON
Applied physics letters
STABILITY OF CARBON NITRIDE MATERIALS AT HIGH-PRESSURE AND TEMPERATURE
Journal of the American Chemical Society
NONEQUILIBRIUM PARTITIONING DURING RAPID SOLIDIFICATION OF SI-AS ALLOYS
Journal of crystal growth
GERMANIUM PARTITIONING IN SILICON DURING RAPID SOLIDIFICATION
Journal of applied physics
FORMATION OF BANDS OF ULTRAFINE BERYLLIUM PARTICLES DURING RAPID SOLIDIFICATION OF AL-BE ALLOYS - MODELING AND DIRECT OBSERVATIONS
Acta metallurgica et materialia
SEARCH FOR A SOLUTE-DRAG EFFECT IN DENDRITIC SOLIDIFICATION
Acta metallurgica et materialia
THE TRANSITION FROM SHORT-RANGE DIFFUSION-LIMITED TO COLLISION-LIMITED GROWTH IN ALLOY SOLIDIFICATION
Acta metallurgica et materialia
SOLUTE TRAPPING IN ALUMINUM-ALLOYS
Acta metallurgica et materialia
NONEQUILIBRIUM INTERFACE KINETICS DURING RAPID SOLIDIFICATION
Materials science & engineering. A, Structural materials: properties, microstructure and processing
SOLUTE TRAPPING OF GROUP-III, IV, AND V ELEMENTS IN SILICON BY AN APERIODIC STEPWISE GROWTH-MECHANISM
Journal of applied physics
ABSENCE OF SOLUTE DRAG IN SOLIDIFICATION
Applied physics letters
TIME-RESOLVED TEMPERATURE-MEASUREMENTS DURING PULSED-LASER IRRADIATION USING THIN-FILM METAL THERMOMETERS
Review of scientific instruments
RESTRICTED APPLICABILITY OF ONSAGER RECIPROCITY RELATIONS TO MODELS OF INTERFACE MOTION
The Journal of chemical physics
TIME-RESOLVED TEMPERATURE-MEASUREMENTS DURING RAPID SOLIDIFICATION OFSI-AS ALLOYS INDUCED BY PULSED-LASER MELTING
Journal of applied physics