Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC
Autore:
DOYLE JP; ABOELFOTOH MO; SVENSSON BG; SCHONER A; NORDELL N;
Indirizzi:
ROYAL INST TECHNOL,POB E229 S-16440 KISTA SWEDEN IND MICROELECT CTR S-16421 KISTA SWEDEN
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 10, volume: 6, anno: 1997,
pagine: 1388 - 1391
SICI:
0925-9635(1997)6:10<1388:COEADD>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON;
Keywords:
DEFECTS; SIMS; DLTS; DEEP LEVELS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
J.P. Doyle et al., "CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC", DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1388-1391

Abstract

Electrically active deep level defects have been characterized in n-type 6H- and 4H-SiC utilizing deep level transient spectroscopy (DLTS). In both polytypes, defects are observed in the as-grown stair. In 6H-SiC two levels in the energy gap at 0.34 and 0.41 eV below the conduction band edge (E-c) are suggested as being intrinsic in nature as their concentration increases after 2 MeV electron irradiation. Additionally, a level 0.51 eV below E-c observed after electron or deuterium irradiation anneals out completely below 300 degrees C. In as-grown epitaxial layers of the 4H-SiC polytype, a level 0.70 eV below E-c is foundwith a capture cross-section of 4 x 10(-14) cm(2) and a concentrationat or below 1 x 10(13) cm(-3) exhibits acceptor-like behavior. Secondary ion mass spectrometry (SIMS) profiling reveals no evidence for Ti,V, or Cr incorporation into th epitaxial layers above approximate to 10(13) cm(-3). (C) 1997 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 05:51:35