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Titolo:
TRIVALENT BEHAVIOR OF PALLADIUM IN SILICON
Autore:
SACHSE JU; JOST W; WEBER J; LEMKE H;
Indirizzi:
MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 800665 D-70506 STUTTGART GERMANY TECH UNIV BERLIN,INST WERKSTOFFE ELEKTROTECH D-10623 BERLIN GERMANY
Titolo Testata:
Applied physics letters
fascicolo: 10, volume: 71, anno: 1997,
pagine: 1379 - 1381
SICI:
0003-6951(1997)71:10<1379:TBOPIS>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
PLATINUM; DIFFUSION; LIFETIME;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
J.U. Sachse et al., "TRIVALENT BEHAVIOR OF PALLADIUM IN SILICON", Applied physics letters, 71(10), 1997, pp. 1379-1381

Abstract

Palladium is known to exhibit an acceptor state at E-C-0.22 eV in n-type Si and a donor state at E-V+ 0.31 eV in p-type Si. We have identified a third level at E-V + (0.140 +/- 0.005) eV and attribute it to the double donor state of substitutional Pd. The Pd level positions are very similar to the corresponding levels for Pt. The double donor states of both metals show an electric field dependence of the emission rates and a thermal activation of the hole capture cross sections. (C) 1997 American Institute of Physics.

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Documento generato il 04/07/20 alle ore 03:58:55