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Titolo:
INTERFACIAL REACTION AND FORMATION MECHANISM OF EPITAXIAL COSI2 BY RAPID THERMAL ANNEALING IN CO TI/SI(100) SYSTEM/
Autore:
KIM GB; KWAK JS; BAIK HK; LEE SM;
Indirizzi:
YONSEI UNIV,DEPT MET ENGN SEOUL 120749 SOUTH KOREA YONSEI UNIV,DEPT MET ENGN SEOUL 120749 SOUTH KOREA KANGWEON NATL UNIV,DEPT MAT ENGN CHUNCHON 200701 SOUTH KOREA
Titolo Testata:
Journal of applied physics
fascicolo: 5, volume: 82, anno: 1997,
pagine: 2323 - 2328
SICI:
0021-8979(1997)82:5<2323:IRAFMO>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
CO/TI BILAYERS; GROWTH; SILICON; SI(100); AMBIENT; TISI2; FILMS; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
21
Recensione:
Indirizzi per estratti:
Citazione:
G.B. Kim et al., "INTERFACIAL REACTION AND FORMATION MECHANISM OF EPITAXIAL COSI2 BY RAPID THERMAL ANNEALING IN CO TI/SI(100) SYSTEM/", Journal of applied physics, 82(5), 1997, pp. 2323-2328

Abstract

A ternary compound of Co3Ti2Si is suggested as a reaction barrier forthe formation of epitaxial CoSi2 in the Co/Ti/Si system when adoptingthe rapid thermal annealing process. It controls Co diffusion to the Si substrate, followed by formation of epitaxial CoSi2. After the epitaxial CoSi2 was formed, the interfacial morphology of the upper layer/CoSi2 interface was very different according to silicidation temperature, that is, the interface was planar at 800 degrees C, but rough at 900 degrees C. This was attributed to the reaction between the upper layer consisting of Co-Ti-Si and the CoSi2 layer at 900 degrees C, whichresulted in Ti-rich precipitates at the surface. The Ti-rich precipitates acted as a diffusion sink of dopant, thus, the leakage current density for the silicidation temperature of 900 degrees C was much higher than that for the temperature of 800 degrees C. These results suggest that the silicidation temperature is one of the most critical factors in determining the leakage current of the p(+)n junction diode. (C) 1997 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 15:57:02