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Titolo:
SEMICONDUCTOR-LASER SOURCES FOR EXTERNALLY MODULATED MICROWAVE ANALOGLINKS
Autore:
BETTS GE; DONNELLY JP; WALPOLE JN; GROVES SH; ODONNELL FJ; MISSAGGIA LJ; BAILEY RJ; NAPOLEONE A;
Indirizzi:
MIT,LINCOLN LAB,244 WOOD ST LEXINGTON MA 02173
Titolo Testata:
IEEE transactions on microwave theory and techniques
fascicolo: 8, volume: 45, anno: 1997,
parte:, 2
pagine: 1280 - 1287
SICI:
0018-9480(1997)45:8<1280:SSFEMM>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
DYNAMIC-RANGE; INTENSITY NOISE; POWER-AMPLIFIER; OPERATION; SYSTEMS;
Keywords:
LASER NOISE; OPTICAL ANALOG LINKS; OPTICAL MODULATION; SEMICONDUCTOR LASERS; SEMICONDUCTOR OPTICAL AMPLIFIERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
G.E. Betts et al., "SEMICONDUCTOR-LASER SOURCES FOR EXTERNALLY MODULATED MICROWAVE ANALOGLINKS", IEEE transactions on microwave theory and techniques, 45(8), 1997, pp. 1280-1287

Abstract

High-performance semiconductor continous-wave (CW) sources are demonstrated in this paper, which include a Fabry-Perot (FP) laser oscillator (Ld)) with relative intensity noise (RIN) < -165 dB/Hz at frequencies above 500 MHz, and a tapered semiconductor optical amplifier with 35-dB gain, a maximum output power of 820 mW, and RIN approximate to -155 dB/Hz at microwave frequencies, These are used in suboctave-bandwidth analog links to demonstrate link performance comparable to that available with solid-state laser sources.

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Documento generato il 29/11/20 alle ore 06:37:44