Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
RADICAL AND ION COMPOSITIONS OF BCL3 CL-2 PLASMA AND THEIR RELATION TO ALUMINUM ETCH CHARACTERISTICS/
Autore:
KAZUMI H; HAMASAKI R; TAGO K;
Indirizzi:
HITACHI LTD,HITACHI RES LAB,KASADO WORKS,7-2-1 OMIKA CHO HITACHI IBARAKI 31912 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 7B, volume: 36, anno: 1997,
pagine: 4829 - 4837
SICI:
0021-4922(1997)36:7B<4829:RAICOB>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY;
Keywords:
PLASMA CHEMISTRY; PARTICLE-IN-CELL METHOD; FLUID EQUATIONS; MOLECULAR ORBITAL METHOD; ION ENERGY DISTRIBUTION; AL ETCHING; SELECTIVITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
H. Kazumi et al., "RADICAL AND ION COMPOSITIONS OF BCL3 CL-2 PLASMA AND THEIR RELATION TO ALUMINUM ETCH CHARACTERISTICS/", JPN J A P 1, 36(7B), 1997, pp. 4829-4837

Abstract

Plasma compositions in BCL3/Cl-2 were calculated using a molecular orbital method and a plasma kinetic method. The key factors for plasma compositions and their relations to the etch characteristics of Al-based multilayers were investigated. The etch rate of Al seemed to be correlated with the Cl density rather than the Cl-2 density. The etch rates of TiN and the resist were also related to the Cl density and the ion density. Therefore the ion energy distribution (IED) impinging on the wafer was also calculated and the rf frequency dependence of the selectivity of the TiN/resist was evaluated using an etching model. Even if the rf frequency increased to 10 MHz, where the IED had a single peak, the predicted selectivity was slightly improved. A narrower IED was required.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 15:03:12