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Titolo:
LAYER STRUCTURE AND FRACTURE STRENGTH OF SIC CR JOINT/
Autore:
FENG JC; NAKA M; SCHUSTER JC;
Indirizzi:
OSAKA UNIV,JOINING & WELDING RES INST IBARAKI OSAKA 567 JAPAN
Titolo Testata:
Nippon Kinzoku Gakkaishi
fascicolo: 7, volume: 61, anno: 1997,
pagine: 636 - 642
SICI:
0021-4876(1997)61:7<636:LSAFSO>2.0.ZU;2-I
Fonte:
ISI
Lingua:
JPN
Keywords:
CERAMIC-METAL JOINING; INTERFACE STRUCTURE; BONDING STRENGTH; SILICON CARBIDE; CHROMIUM SILICIDE; CHROMIUM CARBIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
J.C. Feng et al., "LAYER STRUCTURE AND FRACTURE STRENGTH OF SIC CR JOINT/", Nippon Kinzoku Gakkaishi, 61(7), 1997, pp. 636-642

Abstract

Solid-state bonding of pressureless-sintered SiC has been carried outusing 20 mu m Cr foil at temperatures from 1373 to 1773 It for a constant 1.8 ks in vacuum. The formation of reaction phase and microstructure at the interfaces between SIC and Cr were investigated by X-ray diffraction and electron probe microanalysis. At the bonding temperatureof 1373 K, the cubic Cr23C6 phase next to Cr and the hexagonal Cr7C3 phase next to SIC were formed. Further, the cubic Cr3SiCx phase appeared on the SiC side at bonding temperature 1473 K. Upon the rise of joint temperature to 1573 K, the hexagonal Cr5Si3Cx phase is formed at the interface of SiC/Cr3SiCx. At a highest bonding temperature of 1773 K, Cr, Cr23C6, Cr7C3 and Cr3SiCx were consumed and resulted in the formation of the layered structures such as SiC/Cr5Si3Cx/Cr7C3/Cr3Si3Cx/SiC. The strength of SIC joint with Cr7C3 adjacent to SIC showed the maximum strength, and degrades with the formation of the brittle phases of Cr3SiCx and Cr5Si3Cx.

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Documento generato il 03/12/20 alle ore 12:44:36