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Titolo:
THE LOCAL ORDER OF AS SITES IN INCREASINGLY AMORPHOUS SI
Autore:
DENT AJ; DERST G; GREAVES GN; KALBITZER S; KLATT C;
Indirizzi:
CCLRC,DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND MAX PLANCK INST KERNPHYS D-6900 HEIDELBERG GERMANY
Titolo Testata:
Journal de physique. IV
fascicolo: C2, volume: 7, anno: 1997,
parte:, 2
pagine: 1207 - 1208
SICI:
1155-4339(1997)7:C2<1207:TLOOAS>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
A.J. Dent et al., "THE LOCAL ORDER OF AS SITES IN INCREASINGLY AMORPHOUS SI", Journal de physique. IV, 7(C2), 1997, pp. 1207-1208

Abstract

Our previous work has concentrated on the recrystallisation of amorphous silicon with temperature and we used XAFS to follow the local order of the dopants (typically As, Ga, etc) to see them change from essentially 3-fold in the amorphous state to 4-fold in the crystalline state. The main findings were that the silicon matrix recovers before the dopants can adjust their coordination numbers to the crystalline requirements. We present here investigations in the reverse process, namely, the progressive amorphisation of the crystalline matrix by ion bombardment. We show the progressive transformation of the dopants local structure as the matrix amorphises and show there is no delay in the structural rearrangement.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/09/20 alle ore 09:19:41