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Titolo:
ANGULAR AND ENERGY-DEPENDENCE OF ION-BOMBARDMENT OF MO SI MULTILAYERS/
Autore:
VOORMA HJ; LOUIS E; BIJKERK F; ABDALI S;
Indirizzi:
ASM LITHOG VELDHOVEN NETHERLANDS EURATOM,FOM,INST PLASMA PHYS RIJNHUIZEN NL-3439 MN NIEUWEGEIN NETHERLANDS DANISH SPACE RES INST DK-2100 COPENHAGEN DENMARK
Titolo Testata:
Journal of applied physics
fascicolo: 4, volume: 82, anno: 1997,
pagine: 1876 - 1881
SICI:
0021-8979(1997)82:4<1876:AAEOIO>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
X-RAY MIRRORS; ROUGHENING INSTABILITY; BEAM; REFLECTIVITY; DEPOSITION; SURFACES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
31
Recensione:
Indirizzi per estratti:
Citazione:
H.J. Voorma et al., "ANGULAR AND ENERGY-DEPENDENCE OF ION-BOMBARDMENT OF MO SI MULTILAYERS/", Journal of applied physics, 82(4), 1997, pp. 1876-1881

Abstract

The process of ion bombardment is investigated for the fabrication ofMo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layersto smoothen the layers by removing an additional thickness of the Si layer. In this study the parameters of Kr+ ion bombardment have been optimized within the energy range 300 eV-2 keV and an angular range between 20 degrees and 50 degrees. The optical performance of the Mo/Si multilayers is determined by absolute measurements of the near-normal-incidence reflectivity at 14.4 nm wavelength. The multilayer structuresare analyzed further with small-angle reflectivity measurements usingboth specular reflectivity and diffuse x-ray scattering. The optimal smoothening parameters are obtained by determining the effect of ion bombardment on the interface roughness of the Si layer. The optimal conditions are found to be 2 keV at 50 degrees angle of incidence with respect to the surface. These settings result in 47% reflectivity at 85 degrees (lambda = 14.4 nm) for a 16-period Mo/Si multilayer mirror, corresponding to an interface roughness of 0.21 nm rms. Analysis shows that the interface roughness is determined by ion induced viscous flow,an effect which increases with ion energy as well as angle of incidence. In order to determine the effect of intermixing of the Si and Mo atoms, the penetration depth of the Kr+ ions is calculated as a function of ion energy and angle of incidence. Furthermore, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates. (C) 1997 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 00:12:31