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Titolo:
Intrinsic stress in chemical vapor deposited diamond films: An analytical model for the plastic deformation of the Si substrate
Autore:
Jeong, J; Kwon, D; Lee, WS; Baik, YJ;
Indirizzi:
Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 Engn, Seoul 151742, South Korea Korea Adv Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 136791, South Korea Korea Adv Inst Sci & Technol Seoul South Korea 136791 36791, South Korea
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 3, volume: 90, anno: 2001,
pagine: 1227 - 1236
SICI:
0021-8979(20010801)90:3<1227:ISICVD>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
CVD-DIAMOND; RESIDUAL-STRESS; RAMAN-SPECTROSCOPY; MICROWAVE PLASMA; ORIGINS; LAYERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Jeong, J Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 ul 151742, South Korea
Citazione:
J. Jeong et al., "Intrinsic stress in chemical vapor deposited diamond films: An analytical model for the plastic deformation of the Si substrate", J APPL PHYS, 90(3), 2001, pp. 1227-1236

Abstract

The intrinsic stress in diamond film deposited on a Si substrate is difficult to measure because high-temperature deposition induces plastic deformation in the Si and so renders useless an elastic solution. In this study, ananalytical model is proposed to estimate intrinsic stress using a substrate-curvature technique and considering the plastic deformation of substrate. The stress distribution of the as-deposited film is affected not only by the intrinsic stress of the film but also by the bending and plastic deformation of the substrate. In this model, the distribution is formulated, basedon elastic/plastic plate-bending theory, in terms of substrate curvatures,intrinsic stress in the film, and yield stress of the substrate. The intrinsic stress of the film together with the yield stress of the substrate canbe obtained from experimentally measured substrate curvatures by solving two equilibrium equations and a moment-relaxation equation describing the film removal. Diamond films were deposited by microwave plasma chemical vapordeposition at varying film thicknesses and deposition temperatures. For the application of the model, the curvature of the film-removed substrate wasmeasured as well as that of as-deposited substrate. The results show that overestimated intrinsic stress can be corrected successfully through this new model. The validity of the results was confirmed by stress measurement using a Raman-peak-shift method. In addition, the generation mechanism of intrinsic stress is analyzed as reflecting a competition between a grain-sizeeffect and nondiamond carbon effect. (C) 2001 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 22:25:32