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Titolo:
Fully differential switched-current memory cell with low charge-injection errors
Autore:
Balachandran, GK; Allen, PE;
Indirizzi:
Georgia Inst Technol, Sch Elect Engn, Atlanta, GA 30332 USA Georgia Inst Technol Atlanta GA USA 30332 ect Engn, Atlanta, GA 30332 USA
Titolo Testata:
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS
fascicolo: 3, volume: 148, anno: 2001,
pagine: 157 - 164
SICI:
1350-2409(200106)148:3<157:FDSMCW>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
COMPENSATION; DISTORTION; CIRCUITS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Balachandran, GK Georgia Inst Technol, Sch Elect Engn, 777 Atlantic Dr, Atlanta, GA 30332 USA Georgia Inst Technol 777 Atlantic Dr Atlanta GA USA 30332
Citazione:
G.K. Balachandran e P.E. Allen, "Fully differential switched-current memory cell with low charge-injection errors", IEE P-CIRC, 148(3), 2001, pp. 157-164

Abstract

A fully differential switched-current memory cell with low charge-injection errors is proposed. The cell uses constant-voltage switching to obtain signal-independent charge injection, which is rejected using suitable differential structures. The cell is designed using a 0.35 mum digital CMOS process. Simulation results of the cell with a clock frequency of 13 MHz and withinput signal amplitudes nearly as high as the bias current (600 muA) show a total harmonic distortion of -66dB, a current transfer error. Of less than 0.4% and a signal-to-noise ratio of 60dB.

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Documento generato il 31/03/20 alle ore 04:36:17