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Titolo:
Pd- and Pt-SiC Schottky diodes for detection of H-2 and CH4 at high temperature
Autore:
Kim, CK; Lee, JH; Choi, SM; Noh, IH; Kim, HR; Cho, NI; Hong, C; Jang, GE;
Indirizzi:
Soonchunhyang Univ, Sch Informat Technol Engn, Asan 336745, Chungnam, South Korea Soonchunhyang Univ Asan Chungnam South Korea 336745 Chungnam, South Korea Sun Moon Univ, Dept Elect Engn, Asan 336840, Chungnam, South Korea Sun Moon Univ Asan Chungnam South Korea 336840 840, Chungnam, South Korea Soonchunhyang Univ, Sch Informat & Phys, Asan 336745, Chungnam, South Korea Soonchunhyang Univ Asan Chungnam South Korea 336745 Chungnam, South Korea Chungbuk Natl Univ, Dept Mat Engn, Cheongju 361763, Chungbuk, South Korea Chungbuk Natl Univ Cheongju Chungbuk South Korea 361763 gbuk, South Korea
Titolo Testata:
SENSORS AND ACTUATORS B-CHEMICAL
fascicolo: 1-2, volume: 77, anno: 2001,
pagine: 455 - 462
SICI:
0925-4005(20010615)77:1-2<455:PAPSDF>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAS SENSORS;
Keywords:
SiC; diode; hydrogen; methane; sensor;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, CK Soonchunhyang Univ, Sch Informat Technol Engn, Asan 336745, Chungnam, South Korea Soonchunhyang Univ Asan Chungnam South Korea 336745 , South Korea
Citazione:
C.K. Kim et al., "Pd- and Pt-SiC Schottky diodes for detection of H-2 and CH4 at high temperature", SENS ACTU-B, 77(1-2), 2001, pp. 455-462

Abstract

Hydrogen- and methane-sensing characteristics of Pt- and Pd-SiC Schottky diodes, fabricated on the same SiC substrate, have been compared and analyzed as a function of hydrogen partial pressure and temperature by I-V and DeltaI-t methods under steady-state and transient conditions at high temperature. The effects of the gas adsorption on the parameters such as barrier height, initial rate of gas adsorption, and gas reaction kinetics are investigated. Analysis of steady-state reaction kinetics using I-V method confirmedthat the atomistic hydrogen adsorption process is responsible for the barrier height change in the diodes. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/04/20 alle ore 09:02:26