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Titolo:
Fabrication and gas sensing characteristics of pure and Pt-doped gamma-Fe2O3 thin film
Autore:
Lim, IS; Jang, GE; Kim, CK; Yoon, DH;
Indirizzi:
Chungbuk Natl Univ, Dept Mat Engn, Choeongju 361763, Chungbuk, South KoreaChungbuk Natl Univ Choeongju Chungbuk South Korea 361763 buk, South Korea Soonchunhyang Univ, Sch Informat Technol Engn, Asan 336745, Choongnam, South Korea Soonchunhyang Univ Asan Choongnam South Korea 336745 oongnam, South Korea Sung Kyun Kwan Univ, Sch Met & Mat Engn, Suwon 440746, Kyunggi, South Korea Sung Kyun Kwan Univ Suwon Kyunggi South Korea 440746 Kyunggi, South Korea
Titolo Testata:
SENSORS AND ACTUATORS B-CHEMICAL
fascicolo: 1-2, volume: 77, anno: 2001,
pagine: 215 - 220
SICI:
0925-4005(20010615)77:1-2<215:FAGSCO>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
ALPHA-FE2O3; SENSORS;
Keywords:
PECVD; gamma-Fe2O3; Fe3O4; sensitivity; Mossbauer analysis;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Lim, IS Chungbuk Natl Univ, Dept Mat Engn, Choeongju 361763, Chungbuk, South Korea Chungbuk Natl Univ Choeongju Chungbuk South Korea 361763 th Korea
Citazione:
I.S. Lim et al., "Fabrication and gas sensing characteristics of pure and Pt-doped gamma-Fe2O3 thin film", SENS ACTU-B, 77(1-2), 2001, pp. 215-220

Abstract

The gamma -Fe2O3 thin films were prepared by the reduction and the oxidation of Fe-O thin films processed by plasma-enhanced chemical vapor deposition (PECVD) technique. The phase transformation of Fe-O thin films was mainlycontrolled by the substrate temperature and rf power. The Fe-O amorphous phase was initially obtained at the deposition rf power over 150 W. The Fe-Oamorphous phase could be transformed into gamma -Fe2O3 phase under the controlled reduction and oxidation at 280-320 degreesC. Based on the result ofsensing characteristics, the prepared gamma -Fe2O3 thin film showed the excellent sensitivity to i-C4H10 and H-2 gas. The sensitivities of gamma -Fe2O3 thin film to i-C4H10 and Hz gas were 60 and 90% in 500 ppm environments and 76 and 96% in 3000 ppm environments, respectively. On the other hand, the Pt-addition to y-Fe2O3 thin film does not improve the gas sensitivity inH-2 atmosphere. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/08/20 alle ore 13:59:57