Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Gas sensing properties of semiconductor heterolayer sensors fabricated by slide-off transfer printing
Autore:
Hyodo, T; Mori, T; Kawahara, A; Katsuki, H; Shimizu, Y; Egashira, M;
Indirizzi:
Nagasaki Univ, Fac Engn, Dept Mat Sci & Engn, Nagasaki 8528521, Japan Nagasaki Univ Nagasaki Japan 8528521 Sci & Engn, Nagasaki 8528521, Japan Saga Ceram Res Lab, Fine Ceram Div, Saga 8440024, Japan Saga Ceram Res Lab Saga Japan 8440024 ine Ceram Div, Saga 8440024, Japan
Titolo Testata:
SENSORS AND ACTUATORS B-CHEMICAL
fascicolo: 1-2, volume: 77, anno: 2001,
pagine: 41 - 47
SICI:
0925-4005(20010615)77:1-2<41:GSPOSH>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
THICK-FILM; TIN OXIDE; SOL; ODOR; NO2;
Keywords:
slide-off transfer printing; semiconductor gas sensor; heterolayer; H-2; NOx;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Egashira, M Nagasaki Univ, Fac Engn, Dept Mat Sci & Engn, 1-14 Bunkyo Machi, Nagasaki 8528521, Japan Nagasaki Univ 1-14 Bunkyo Machi Nagasaki Japan 8528521 Japan
Citazione:
T. Hyodo et al., "Gas sensing properties of semiconductor heterolayer sensors fabricated by slide-off transfer printing", SENS ACTU-B, 77(1-2), 2001, pp. 41-47

Abstract

H? and NO, sensing properties of semiconductor heterolayer sensors fabricated by a slide-off transfer printing method on alumina substrates equipped with electrodes have been investigated at 200-600 degreesC. A TiO2 single layer sensor exhibited high resistance in air and low sensitivity to H-2 at every temperature. Stacking of an M-SnO2 layer (M: noble metals, loading amount: 0.5 wt.%) over the TiO2 layer led to a decrease in sensor resistance and to an increase in the sensitivity. In contrast, stacking of an M-SnO2 layer over an In2O3 layer was less effective for improving the sensitivity. The difference in the stacking effect between TiO2- and In2O3-based is considered to arise from a change in the electrical conduction path induced by fabrication of the upper layer based on the resistance level, of each sensing and stacked layer. In the case of M-SnO2/TiO2 heterolayer sensors, it was suggested that the conduction path changed from the bottom of the TiO2 layer to that of an M-SnO2 layer plus the specific TiO2 region just above theelectrode and that the specific region dominated the sensor resistance andhence the H-2 sensing performance. The sensitivity enhancement is considered to arise from the diffusion control of gaseous O-2 by the M-SnO2 upper layer. Among the metal oxides tested, WO3 exhibited the highest sensitivity to both NO2 and NO, but the NO sensitivity was about a tenth of the NO2 sensitivity. Stacking of a SiO2 layer on the WO3 layer decreased the NO2 sensitivity, while the NO sensitivity remained almost unchanged. In this case, therefore. the SiO2 layer was suggested to act as a diffusion control layer for NO2. These results suggest that the slide-off transfer printing is quite useful for processing of semiconductor heterolayer sensors. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 01:41:47