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Titolo:
Development and application of instrumental methods for strain analysis ofsemiconductor layers and devices
Autore:
Papadimitriou, D; Liarokapis, E; Richter, W;
Indirizzi:
Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece Natl Tech Univ Athens Athens Greece GR-15780 ys, GR-15780 Athens, Greece Tech Univ Berlin, Inst Festkorperphys, Sekr PN 6 1, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 PN 6 1, D-10623 Berlin, Germany
Titolo Testata:
MIKROCHIMICA ACTA
fascicolo: 3-4, volume: 136, anno: 2001,
pagine: 165 - 169
SICI:
0026-3672(2001)136:3-4<165:DAAOIM>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Keywords:
strain analysis; semiconductor layers; semiconductor devices;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Papadimitriou, D Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, GreeceNatl Tech Univ Athens Athens Greece GR-15780 ns, Greece
Citazione:
D. Papadimitriou et al., "Development and application of instrumental methods for strain analysis ofsemiconductor layers and devices", MIKROCH ACT, 136(3-4), 2001, pp. 165-169

Abstract

Strain effects on semiconductor layers were studied by means of optical spectroscopic techniques with a device developed especially for the study of layered structures and microstructures. Raman, modulated photoreflectance and reflectance anisotropy spectroscopy (RAS) were applied. Measurements were performed on elemental semiconductors (Si), semiconductor alloys (Si-Ge) and III-V semiconductor compounds (GaAs). By application of RAS, strains lower than 10(-4) could be resolved, which is at least one order of magnitudelower than those observable with Raman and modulated reflectance techniques. The RAS spectra of layers strained along either the [010] or [011] direction showed a derivative-like structure at El-gap energies, which increasedlinearly and very quickly with increasing strain. The dependence of this spectral feature on applied strain was used to evaluate strain-dependent effects. This behaviour strongly suggests that RAS can be applied for the optical characterisation of strain in semiconductor microstructures and devices, with a higher efficiency and accuracy than that achieved by previously established optical methods such as Raman and modulation spectroscopy. In addition, the compactness and ease of operation of the instrumentation of RAS provides considerable potential for in situ monitoring/control of semiconductor fabrication conditions.

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Documento generato il 20/01/21 alle ore 12:44:26