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Titolo:
Cleaving oxide films using hydrogen implantation
Autore:
Thevuthasan, S; Jiang, W; Weber, WJ;
Indirizzi:
Pacific NW Natl Lab, Environm Mol Sci Lab, Richland, WA 99352 USA Pacific NW Natl Lab Richland WA USA 99352 Sci Lab, Richland, WA 99352 USA
Titolo Testata:
MATERIALS LETTERS
fascicolo: 6, volume: 49, anno: 2001,
pagine: 313 - 317
SICI:
0167-577X(200107)49:6<313:COFUHI>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
BEAM-AMORPHIZED SRTIO3; SMART-CUT(R) PROCESS; EPITAXIAL RECRYSTALLIZATION; INSULATOR FORMATION; SILICON-CARBIDE; SIC LAYER; ION; COIMPLANTATION; TECHNOLOGY;
Keywords:
ion scattering; rutherford backscattering spectrometry (RBS); nuclear reaction analysis (NRA); cleaving oxide film; damage accumulation; strontium titanate (SrTiO3); hydrogen;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Thevuthasan, S Pacific NW Natl Lab, Environm Mol Sci Lab, POB 999,MSIN K8-93, Richland, WA 99352 USA Pacific NW Natl Lab POB 999,MSIN K8-93 Richland WA USA 99352
Citazione:
S. Thevuthasan et al., "Cleaving oxide films using hydrogen implantation", MATER LETT, 49(6), 2001, pp. 313-317

Abstract

Precise cleaving of oxide films with known thickness using hydrogen implantation and subsequent annealing was investigated using strontium titanate (SrTiO3) as a model material. Rutherford backscattering in channeling geometry (RBS/C), nuclear reaction analysis (NRA), and scanning electron microscopy (SEM) have been used to characterize this process. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/20 alle ore 05:26:09