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Titolo:
Growth behavior of titanium boride films deposited on (100) Si by dual-electron-beam evaporation
Autore:
Lee, YK;
Indirizzi:
Ui Duk Univ, Dept Semicond Engn, Kyungju 780713, South Korea Ui Duk Univ Kyungju South Korea 780713 Engn, Kyungju 780713, South Korea
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 4, volume: 226, anno: 2001,
pagine: 521 - 528
SICI:
0022-0248(200108)226:4<521:GBOTBF>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; B-N COATINGS; DIFFUSION-BARRIERS; TIB2; STRESS; ZRB2;
Keywords:
physical vapor deposition processes; berates;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, YK Ui Duk Univ, Dept Semicond Engn, Kyungju 780713, South Korea Ui Duk Univ Kyungju South Korea 780713 ungju 780713, South Korea
Citazione:
Y.K. Lee, "Growth behavior of titanium boride films deposited on (100) Si by dual-electron-beam evaporation", J CRYST GR, 226(4), 2001, pp. 521-528

Abstract

Titanium boride thin films (TiBx) were deposited on (100) Si substrate by dual-electron-beam evaporation at the substrate temperature of 500 degreesC. This process makes it possible to deposit the non-stoichiometric TIE, film with various desired boron-to-titanium ratios (O less than or equal toB/Ti less than or equal to2.5). It has also been found that the deposition rate and the total film thickness can be controlled within about 5% of the desired value. For as-deposited TIE, films, the resistivity increases gradually with increasing the boron content. The boron-to-titanium ratio has significant effects on the crystalline structure and surface roughness of thin film. The internal stress in all TiBx/Si systems reveal a tensile stress owing to the thermal stress that is generated by the differential thermal expansion between TiBx film and Si substrate during deposition. The variation infilm stress as a function of the nominal B/Ti ratio is closely related with the crystalline structure. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 20:02:59