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Titolo:
Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions
Autore:
Selder, M; Kadinski, L; Durst, F; Hofmann, D;
Indirizzi:
Univ Erlangen Nurnberg, Inst Fluid Mech, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Erlangen Germany D-91058 -91058 Erlangen, Germany Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Erlangen Germany D-91058 -91058 Erlangen, Germany
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 4, volume: 226, anno: 2001,
pagine: 501 - 510
SICI:
0022-0248(200108)226:4<501:GMOTSS>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
SINGLE-CRYSTALS; SIMULATION; HEAT;
Keywords:
computer simulation; heat transfer; stress; single crystal growth; physical vapor deposition processes; silicon carbide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Selder, M Univ Erlangen Nurnberg, Inst Fluid Mech, Cauerstr 4, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Cauerstr 4 Erlangen Germany D-91058 many
Citazione:
M. Selder et al., "Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions", J CRYST GR, 226(4), 2001, pp. 501-510

Abstract

The current status of the mathematical model for heat and mass transfer during SiC bulk crystal growth from the vapor phase in inductively heated reactors is reviewed. Results on the simulation of thermoelastic stresses during the growth process are presented. Stresses have been analyzed to exceed considerably the critical resolved sheer stress sigma (CRS) = 1 MPa which is generally assumed to be the indicator for the onset of dislocation formation in SIC. It is shown that the conditions for stress formation at fixed positions in the crystal vary considerably during growth and that geometric modifications can contribute significantly to a reduction of the stress level. The possible impact of semitransparency of SiC on additional stress generation is discussed. As effective tool for process control and optimization an inverse modeling procedure is introduced. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 20/09/20 alle ore 08:48:46