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Titolo:
A fast pump-down V-BB generator for sub-1.5-V DRAMs
Autore:
Min, KS; Chung, JY;
Indirizzi:
Hyundai Elect Ind Co Ltd, Memory R&D Div, Adv Memory Design Dept, CheongjuSi 361725, South Korea Hyundai Elect Ind Co Ltd Cheongju Si South Korea 361725 725, South Korea
Titolo Testata:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
fascicolo: 7, volume: 36, anno: 2001,
pagine: 1154 - 1157
SICI:
0018-9200(200107)36:7<1154:AFPVGF>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
CMOS;
Keywords:
charge pump; low-voltage memory circuit; pumping efficiency; V-BB generator;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Min, KS Hyundai Elect Ind Co Ltd, Memory R&D Div, Adv Memory Design Dept, CheongjuSi 361725, South Korea Hyundai Elect Ind Co Ltd Cheongju Si SouthKorea 361725 th Korea
Citazione:
K.S. Min e J.Y. Chung, "A fast pump-down V-BB generator for sub-1.5-V DRAMs", IEEE J SOLI, 36(7), 2001, pp. 1154-1157

Abstract

Based on the study about the previously developed V-BB generators, a fast pump-down and high-efficiency V-BB generator with a cross-coupled hybrid pumping circuit 2 (CHPC2) is presented in this paper. CHPC2 takes only the advantages from the previous generators, eliminating the disadvantages. CHPC2shows a /V-BB/ V-CC as large as 98% even at Low V-CC = 0.9 V,strongly ensuring that it is suitable at sub-1.5-V DRAM applications, Moreover, CHPC2 exhibits a better pumping efficiency and a larger pumping current over the previous ones with a wide range of the load resistance at Vee = 1.2 V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/01/20 alle ore 02:42:04