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Titolo:
0.25 mu m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high f(T)
Autore:
Kumar, V; Lu, W; Schwindt, R; Van Hove, J; Chow, P; Adesida, I;
Indirizzi:
Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA Univ Illinois Urbana IL USA 61801 n, Microelect Lab, Urbana, IL 61801 USA SVT Associates, Eden Prairie, MN 55344 USA SVT Associates Eden Prairie MNUSA 55344 ates, Eden Prairie, MN 55344 USA
Titolo Testata:
ELECTRONICS LETTERS
fascicolo: 13, volume: 37, anno: 2001,
pagine: 858 - 859
SICI:
0013-5194(20010621)37:13<858:0MMGMA>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
TRANSISTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
5
Recensione:
Indirizzi per estratti:
Indirizzo: Kumar, V Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, 1406 W Green St, Urbana, IL 61801 USA Univ Illinois 1406 W Green St Urbana IL USA 61801 a, IL 61801 USA
Citazione:
V. Kumar et al., "0.25 mu m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high f(T)", ELECTR LETT, 37(13), 2001, pp. 858-859

Abstract

MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphiresubstrates have been fabricated. These 0.25 mum gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (f(T)) of 67 GHz, and a maximum frequency of oscillation (f(max)) of 136 GHz. The f(T)of 67 GHz and f(max) of 136 GHz are the highest reported values for 0.25 mum gate-length GaN-bassd HEMTs.

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Documento generato il 01/04/20 alle ore 11:40:58