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Titolo:
Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams
Autore:
Liao, MY; Qin, FG; Chai, CL; Liu, ZK; Yang, SY; Yao, ZY; Wang, ZG;
Indirizzi:
Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
ACTA PHYSICA SINICA
fascicolo: 7, volume: 50, anno: 2001,
pagine: 1324 - 1328
SICI:
1000-3290(200107)50:7<1324:IOIEAD>2.0.ZU;2-9
Fonte:
ISI
Lingua:
CHI
Soggetto:
TETRAHEDRAL AMORPHOUS-CARBON; BIAS-ENHANCED NUCLEATION; ATOMIC-FORCE MICROSCOPY; DIAMOND-LIKE CARBON; SILICON; GROWTH; MODEL;
Keywords:
amorphous carbon; surface morphology; mass-selected low energy ion beam deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Liao, MY Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 Peoples R China
Citazione:
M.Y. Liao et al., "Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams", ACT PHY C E, 50(7), 2001, pp. 1324-1328

Abstract

Carbon films were deposited by mass-selected ion beam technique with ion energies 50-200eV at a substrate temperature from room temperature to 80 degreesC,. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600 degreesC,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800 degreesC. They were perpendicular to the surface and parallel to each other. preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.

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Documento generato il 11/07/20 alle ore 11:18:25