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Titolo:
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
Autore:
Niu, ZC; Wang, XD; Miao, ZH; Feng, SL;
Indirizzi:
Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 227, anno: 2001,
pagine: 1062 - 1068
SICI:
0022-0248(200107)227:<1062:MOEWOS>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
1.35 MU-M; GAAS-SURFACES; PHOTOLUMINESCENCE; ISLANDS;
Keywords:
crystal morphology; quantum dots; molecular beam epitaxy; semiconducting gallium arsenide; semiconducting indium gallium arsenide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Niu, ZC Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 Peoples R China
Citazione:
Z.C. Niu et al., "Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer", J CRYST GR, 227, 2001, pp. 1062-1068

Abstract

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantumdots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs(x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs(x greater than or equal to 0.1) layers were mainly due to the reducing ofthe strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 03/04/20 alle ore 07:20:51