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Titolo:
The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001)
Autore:
Hartell, AD; Tok, ES; Zhang, J;
Indirizzi:
Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BW, England Univ London Imperial Coll Sci Technol & Med London England SW7 2BW gland Natl Univ Singapore, Dept Mat Sci, Singapore 119260, Singapore Natl Univ Singapore Singapore Singapore 119260 ngapore 119260, Singapore
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 227, anno: 2001,
pagine: 729 - 734
SICI:
0022-0248(200107)227:<729:TDORAR>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; REFLECTANCE-DIFFERENCE SPECTROSCOPY; SURFACE SEGREGATION; GROWTH; SI1-XGEX; SI(001); SILICON; SYSTEM; MODEL;
Keywords:
doping; segregation; chemical vapour deposition processes; molecular beam epitaxy; semiconducting silicon; semiconducting silicon compounds;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, J Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, Prince Consort Rd, London SW7 2BW, England Univ London Imperial Coll Sci Technol & Med Prince Consort Rd London England SW7 2BW
Citazione:
A.D. Hartell et al., "The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001)", J CRYST GR, 227, 2001, pp. 729-734

Abstract

Assessment of surface arsenic coverage during epitaxial growth of n-type doped Si is essential to the understanding of dopant incorporation and segregation behaviour. This particular problem is investigated using reflectanceanisotropy spectroscopy (RAS) and reflection high energy electronic diffraction (RHEED) intensity oscillation technique as in situ probes. Initial measurement and analysis show that RAS is extremely sensitive to the presenceof As on vicinal Si(0 0 1) surfaces and that the changes in the RA response at 2.6 eV are approximately linear to the As surface coverage produced byrepeated cycles of low temperature adsorption of arsine followed by thermal desorption of hydrogen. For singular Si(0 0 1)surfaces where RAS cannot be applied, RHEED intensity oscillations were used to follow the change in As surface concentration during the growth of an Si capping layer over pre-deposited As. Using a model of the influence of As on the Si growth rate from Si hydrides, a surface As concentration profile was obtained and comparedwith that predicted by a model of As surface segregation. The results werein good agreement with secondary ion mass spectrometry measurements of a similar sample. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 04/04/20 alle ore 15:29:13