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Titolo:
First-principles study of Si incorporation processes on a GaAs(111)A surface
Autore:
Taguchi, A; Shiraishi, K; Ito, T;
Indirizzi:
NTT, Basic Res Labs, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan NTTAtsugi Kanagawa Japan 2430198 n Labs, Atsugi, Kanagawa 2430198, Japan Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan Mie Univ Tsu Mie Japan 5148507 v, Dept Engn Phys, Tsu, Mie 5148507, Japan
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
, volume: 227, anno: 2001,
pagine: 83 - 87
SICI:
0022-0248(200107)227:<83:FSOSIP>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS; ENERGETICS; VACANCY; DOPANT; GROWTH; MBE;
Keywords:
adsorption; desorption; doping; surface processes; molecular beam epitaxy; semiconducting III-V materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Taguchi, A NTT, Basic Res Labs, NTT Photon Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan NTT 3-1 Morinosato Wakamiya Atsugi KanagawaJapan 2430198 Japan
Citazione:
A. Taguchi et al., "First-principles study of Si incorporation processes on a GaAs(111)A surface", J CRYST GR, 227, 2001, pp. 83-87

Abstract

Si incorporation processes on a GaAs(1 1 1)A surface were investigated by using the first-principles pseudopotential method. We found that the most stable adsorption site for a single Si atom is a Ga lattice site of the GaAslattice, but that the Si atom is pushed out from the site when Ga-As-Si microstructures are formed on the surface. We also found that a Si atom remains at the Ga lattice sire when it couples with three As adatoms. These findings qualitatively explain the experimentally observed properties of Si-doped GaAs layers, i.e., that the layers are p-type under conventional growth conditions and they become n-type under very high As pressure. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 06/04/20 alle ore 07:35:50