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Titolo:
Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimator
Autore:
Kudo, Y; Liu, KY; Kawado, S; Xiaowei, Z; Hirano, K;
Indirizzi:
Sony Corp, Tech Support Ctr, Atsugi, Kanagawa 2430021, Japan Sony Corp Atsugi Kanagawa Japan 2430021 , Atsugi, Kanagawa 2430021, Japan High Energy Accelerator Res Org, Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan High Energy Accelerator Res Org Tsukuba Ibaraki Japan 3050801 0801, Japan
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 2, volume: 90, anno: 2001,
pagine: 670 - 674
SICI:
0021-8979(20010715)90:2<670:COPLDI>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Kudo, Y Sony Corp, Tech Support Ctr, 4-16-1 Okata, Atsugi, Kanagawa 2430021, Japan Sony Corp 4-16-1 Okata Atsugi Kanagawa Japan 2430021 430021, Japan
Citazione:
Y. Kudo et al., "Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimator", J APPL PHYS, 90(2), 2001, pp. 670-674

Abstract

Instead of the conventional flat collimator a curved collimator was used in double-crystal x-ray topography. The curvature of the collimator was adjusted so that the Bragg condition for x-ray diffraction was uniformly satisfied over a wide area of the silicon wafer. The image area of the wafer was wide enough to characterize the local lattice distortion induced by test element groups of metal-oxide-semiconductor capacitors formed on the wafer. The lattice distortion was measured as variations in lattice plane spacing and in lattice plane orientation using local angular deviations from the Bragg condition. These angular deviations were determined by fitting the x-rayintensities measured at the same point on a series of topographs taken around the Bragg peak to the rocking curve of the sample. The lattice plane spacing changed abruptly by 10(-6) at the boundary between the areas of gate oxide (11 nm thick) and the areas of field oxide (400 nm thick), and showedless variation within these areas. The lattice plane orientation changed monotonically in each area, with an inclination of the order of 10(-5) rad within the largest gate oxide area (5x5 mm(2)). (C) 2001 American Institute of Physics.

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Documento generato il 10/04/20 alle ore 01:46:06