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Titolo:
Commercial production of QWIP wafers by molecular beam epitaxy
Autore:
Fastenau, JM; Liu, WK; Fang, XM; Lubyshev, DI; Pelzel, RI; Yurasits, TR; Stewart, TR; Lee, JH; Li, SS; Tidrow, MZ;
Indirizzi:
Quantum Epitaxial Design IQE Inc, Bethlehem, PA 18015 USA Quantum Epitaxial Design IQE Inc Bethlehem PA USA 18015 hem, PA 18015 USA Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida Gainesville FL USA 32611 omp Engn, Gainesville, FL 32611 USA Ballist Missile Def Org, Washington, DC 20301 USA Ballist Missile Def OrgWashington DC USA 20301 Washington, DC 20301 USA
Titolo Testata:
INFRARED PHYSICS & TECHNOLOGY
fascicolo: 3-5, volume: 42, anno: 2001,
pagine: 407 - 415
SICI:
1350-4495(200106/10)42:3-5<407:CPOQWB>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
WELL INFRARED PHOTODETECTORS; WAVELENGTH;
Keywords:
quantum well infrared photodetectors; molecular beam epitaxy; multi-wafer MBE; high-resolution X-ray diffraction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Liu, WK Quantum Epitaxial Design IQE Inc, 119 Technol Dr, Bethlehem, PA 18015 USA Quantum Epitaxial Design IQE Inc 119 Technol Dr Bethlehem PA USA 18015
Citazione:
J.M. Fastenau et al., "Commercial production of QWIP wafers by molecular beam epitaxy", INFR PHYS T, 42(3-5), 2001, pp. 407-415

Abstract

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedlygrow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inchsubstrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms. (C) 2001 ElsevierScience B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 06:34:25