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Titolo:
Investigation of multi-color, broadband quantum well infrared photodetectors with digital graded superlattice barrier and linear-graded barrier for long wavelength infrared applications
Autore:
Lee, JH; Li, SS; Tidrow, MZ; Liu, WK;
Indirizzi:
Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida Gainesville FL USA 32611 omp Engn, Gainesville, FL 32611 USA Ballist Missile Def Org, Washington, DC USA Ballist Missile Def Org Washington DC USA le Def Org, Washington, DC USA IQE Inc, Bethlehem, PA USA IQE Inc Bethlehem PA USAIQE Inc, Bethlehem, PA USA
Titolo Testata:
INFRARED PHYSICS & TECHNOLOGY
fascicolo: 3-5, volume: 42, anno: 2001,
pagine: 123 - 134
SICI:
1350-4495(200106/10)42:3-5<123:IOMBQW>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
VOLTAGE; INTERSUBBAND; ABSORPTION; DETECTORS; CAMERA;
Keywords:
quantum well infrared photodetectors; digital graded superlattice barrier; linear-graded barrier; broadband; double barrier; long-wavelength infrared; spectral responsivity; detectivity; full-width half-maximum;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Li, SS Univ Florida, Dept Elect & Comp Engn, 561 EB-33, Gainesville, FL 32611 USA Univ Florida 561 EB-33 Gainesville FL USA 32611 ville, FL 32611 USA
Citazione:
J.H. Lee et al., "Investigation of multi-color, broadband quantum well infrared photodetectors with digital graded superlattice barrier and linear-graded barrier for long wavelength infrared applications", INFR PHYS T, 42(3-5), 2001, pp. 123-134

Abstract

We report four different InGaAs/AlGaAs multi-color, broadband (BB) quantumwell infrared photodetectors (QWIPs) with digital graded superlattice barrier (DGSLB) and linear-graded barrier (LGB) for long wavelength infrared (LWIR) detection. The two DGSLB-QWIPs were grown using compositionally DGSLB structures with GaAs/Al0.15Ga0.85As material system to create a staircase-like band gap variation in the barrier region. A BE spectral response (7-16 mum) was obtained under positive biases while a normal spectral response (lambda (p) = 11 mum) was obtained under negative biases in the BB-DGSLB-QWIP. A high sensitivity double barrier (DB)-DGSLB-QWIP with a thin undoped Al0.15Ga0.85As DB grown on both side of the quantum well has also been studied. A normal spectral response with peak wavelength at 12 mum was obtained inthis device under both positive and negative biases. In addition, two InGaAs/AlGaAs QWIPs using AlxGa1-xAs LGB with and without AlGaAs DB layers havealso been investigated. For the BB-LGB-QWIP, the BB spectral response was obtained under positive biases while the voltage-tunable multi-color detection with two peaks were obtained at negative biases. A very high responsivity was achieved in the DB-LGB-QWIP. (C) 2001 Published by Elsevier Science B.V.

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Documento generato il 20/09/20 alle ore 01:03:39