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Titolo:
Effect of stress by dopants and nitrogen on grown-in defects in silicon
Autore:
Harada, H; Matsuo, Y; Tanahashi, K; Koukitsu, A; Inoue, N; Wada, K;
Indirizzi:
Univ Osaka Prefecture, RIAST, Sakai, Osaka 5998570, Japan Univ Osaka Prefecture Sakai Osaka Japan 5998570 kai, Osaka 5998570, Japan Tokyo Univ Agr & Technol, Fac Engn, Koganei, Tokyo 1840012, Japan Tokyo Univ Agr & Technol Koganei Tokyo Japan 1840012 Tokyo 1840012, Japan MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA MIT Cambridge MA USA 02139 , Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Titolo Testata:
PHYSICA B
, volume: 302, anno: 2001,
pagine: 386 - 392
SICI:
0921-4526(200108)302:<386:EOSBDA>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Keywords:
substitutional impurities; nitrogen; size-effect; valence force field model;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Harada, H Univ Osaka Prefecture, RIAST, 1-2 Gakuencho, Sakai, Osaka 5998570, Japan Univ Osaka Prefecture 1-2 Gakuencho Sakai Osaka Japan 5998570 an
Citazione:
H. Harada et al., "Effect of stress by dopants and nitrogen on grown-in defects in silicon", PHYSICA B, 302, 2001, pp. 386-392

Abstract

We analyze the defect density change caused by B and Sb duping and the. determination of configuration of doped N in silicon from the viewpoint of stress accompanied by doping. The former is phenomenologically analyzed by the size-effect model and the threshold point defect concentration change ti,l void density change is estimated. The latter is analyzed using the: valence force field model and the atomic strain energy is calculated. The role of strain energy and unpaired electron in determining the structure is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/05/20 alle ore 16:28:36