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Titolo:
DX-like behavior of oxygen in GaN
Autore:
Wetzel, C; Amano, T; Akasaki, I; Ager, JW; Grzegory, I; Meyer, BK;
Indirizzi:
Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ Nagoya Aichi Japan 4688502 ku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ Nagoya Aichi Japan 4688502 ku Ku, Nagoya, Aichi 4688502, Japan Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA Lawrence Berkeley Natl Lab Berkeley CA USA 94720 , Berkeley, CA 94720 USA Polish Acad Sci, UNIPRESS, High Pressure Res Ctr, PL-01142 Warsaw, Poland Polish Acad Sci Warsaw Poland PL-01142 Res Ctr, PL-01142 Warsaw, Poland Univ Giessen, Inst Phys, D-35392 Giessen, Germany Univ Giessen Giessen Germany D-35392 Inst Phys, D-35392 Giessen, Germany
Titolo Testata:
PHYSICA B
, volume: 302, anno: 2001,
pagine: 23 - 38
SICI:
0921-4526(200108)302:<23:DBOOIG>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
III-V NITRIDES; GALLIUM NITRIDE; HYDROSTATIC-PRESSURE; ALUMINUM NITRIDE; VIBRATIONAL PROPERTIES; EPITAXIAL-GROWTH; POINT-DEFECTS; DONOR; ALN; SI;
Keywords:
gallium nitride; oxygen; DX-center; vibrational mode;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
54
Recensione:
Indirizzi per estratti:
Indirizzo: Wetzel, C Meijo Univ, High Tech Res Ctr, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan Meijo Univ 1-501 Shiogamaguchi Nagoya Aichi Japan 4688502 Japan
Citazione:
C. Wetzel et al., "DX-like behavior of oxygen in GaN", PHYSICA B, 302, 2001, pp. 23-38

Abstract

The role of oxygen as a shallow donor and a DX-state in GaN is elucidated by recent Raman experiments under hydrostatic pressure and the findings of first principles calculations. A pressure induced transfer of electrons from a shallow donor state to a deep DX-like state of the same donor can be correlated with vibrational gap modes by monitoring the freeze-out dynamics. Both features are unique to oxygen doped GaN and cannot be observed in Si doped material. The gap modes can be well explained by a linear chain model of impurity vibrations of substitutional O on the N site. A mode variation,and switching steps in its pressure behavior, which occurs in parallel to the carrier freeze-out are proposed to reflect three different charge states of the strongly localized states of O. This DX-type behavior as well as the experimental threshold pressure values are in excellent agreement with the theory results. (C) 2001 Published by Elsevier Science B.V.

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Documento generato il 05/12/20 alle ore 01:28:06