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Titolo:
Ion implantation and thermal annealing in silicon carbide and gallium nitride
Autore:
Jiang, W; Weber, WJ; Thevuthasan, S;
Indirizzi:
Pacific NW Natl Labs, Richland, WA 99352 USA Pacific NW Natl Labs Richland WA USA 99352 l Labs, Richland, WA 99352 USA
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
, volume: 178, anno: 2001,
pagine: 204 - 208
SICI:
0168-583X(200105)178:<204:IIATAI>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
IRRADIATION-INDUCED AMORPHIZATION; RADIATION-DAMAGE; GAN; BOMBARDMENT; BEHAVIOR; CERAMICS; DISORDER;
Keywords:
ion implantation; thermal recovery; 6H-SiC; GaN; ion channeling;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Weber, WJ Pacific NW Natl Labs, MSIN K8-93,POB 999, Richland, WA 99352 USAPacific NW Natl Labs MSIN K8-93,POB 999 Richland WA USA 99352 SA
Citazione:
W. Jiang et al., "Ion implantation and thermal annealing in silicon carbide and gallium nitride", NUCL INST B, 178, 2001, pp. 204-208

Abstract

Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K. respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combineddirect-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2+-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilationprocesses. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 30/10/20 alle ore 00:26:08