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Titolo:
Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration
Autore:
Lindstrom, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, MM; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, GM; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, TJ; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, MJ; Creanza, D; Clauws, P; Da Via, C; Davies, G; De Boer, W; DellOrso, R; De Palma, M; Dezillie, B; Eremin, V; Evrard, O; Fallica, G; Fanourakis, G; Feick, H; Focardi, E; Fonseca, L; Fretwurst, E; Fuster, J; Gabathuler, K; Glaser, M; Grabiec, P; Grigoriev, E; Hall, G; Hanlon, M; Hauler, F; Heising, S; Holmes-Siedle, A; Horisberger, R; Hughes, G; Huhtinen, M; Ilyashenko, I; Ivanov, A; Jones, BK; Jungermann, L; Kaminsky, A; Kohout, Z; Kramberger, C; Kuhnke, M; Kwan, S; Lemeilleur, F; Leroy, C; Letheren, M; Li, Z; Ligonzo, T; Linhart, V; Litovchenko, P; Loukas, D; Lozano, M; Luczynski, Z; Lutz, G; MacEvoy, B; Manolopoulos, S; Markou, A; Martinez, C; Messineo, A; Miku, M; Moll, M; Nossarzewska, E; Ottaviani, G; Oshea, V; Parrini, G; Passeri, D; Petre, D; Pickford, A; Pintilie, I; Pintilie, L; Pospisil, S; Potenza, R; Radicci, V; Raine, C; Rafi, JM; Ratoff, PN; Richter, RH; Riedler, P; Roe, S; Roy, P; Ruzin, A; Ryazanov, AI; Santocchia, A; Schiavulli, L; Sicho, P; Siotis, I; Sloan, T; Slysz, W; Smith, K; Solanky, M; Sopko, B; Stolze, K; Avset, BS; Svensson, B; Tivarus, C; Tonelli, G; Tricomi, A; Tzamarias, S; Valvo, G; Vasilescu, A; Vayaki, A; Verbitskaya, E; Verdini, P; Vrba, V; Watts, S; Weber, ER; Wegrzecki, M; Wegrzecka, I; Weilhammer, P; Wheadon, R; Wilburn, C; Wilhelm, I; Wunstorf, R; Wustenfeld, J; Wyss, J; Zankel, K; Zabierowski, P; Zontar, D;
Indirizzi:
Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany Univ Hamburg Hamburg Germany D-22761 pt Phys 2, D-22761 Hamburg, Germany Brunel Univ, London, England Brunel Univ London EnglandBrunel Univ, London, England Univ Catania, Catania, Italy Univ Catania Catania ItalyUniv Catania, Catania, Italy Univ Liverpool, Liverpool L69 3BX, Merseyside, England Univ Liverpool Liverpool Merseyside England L69 3BX , Merseyside, England Fermilab Astrophys Ctr, Batavia, IL USA Fermilab Astrophys Ctr Batavia ILUSA lab Astrophys Ctr, Batavia, IL USA Max Planck Inst, Munich, Germany Max Planck Inst Munich GermanyMax Planck Inst, Munich, Germany Univ Perugia, I-06100 Perugia, Italy Univ Perugia Perugia Italy I-06100Univ Perugia, I-06100 Perugia, Italy Dipartimento Interateneo Fis, Bari, Italy Dipartimento Interateneo Fis Bari Italy to Interateneo Fis, Bari, Italy Ist Nazl Fis Nucl, I-70126 Bari, Italy Ist Nazl Fis Nucl Bari Italy I-70126 Nazl Fis Nucl, I-70126 Bari, Italy Univ Padua, I-35100 Padua, Italy Univ Padua Padua Italy I-35100Univ Padua, I-35100 Padua, Italy Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland Univ Glasgow Glasgow Lanark Scotland G12 8QQ ow G12 8QQ, Lanark, Scotland Univ Florence, Florence, Italy Univ Florence Florence ItalyUniv Florence, Florence, Italy Inst Phys & Technol Mat, Bucharest, Romania Inst Phys & Technol Mat Bucharest Romania chnol Mat, Bucharest, Romania Univ Lancaster, Lancaster LA1 4YW, England Univ Lancaster Lancaster England LA1 4YW ter, Lancaster LA1 4YW, England Inst Electron Technol, Warsaw, Poland Inst Electron Technol Warsaw Poland st Electron Technol, Warsaw, Poland Univ Autonoma Barcelona, Ctr Nacl Microelect, E-08193 Barcelona, Spain Univ Autonoma Barcelona Barcelona Spain E-08193 E-08193 Barcelona, Spain Inst Fis Corpuscular, Valencia, Spain Inst Fis Corpuscular Valencia Spain st Fis Corpuscular, Valencia, Spain Univ Ljubljana, Jozef Stefan Inst, Ljubljana 61000, Slovenia Univ Ljubljana Ljubljana Slovenia 61000 Inst, Ljubljana 61000, Slovenia Univ Ljubljana, Dept Phys, Ljubljana 61000, Slovenia Univ Ljubljana Ljubljana Slovenia 61000 Phys, Ljubljana 61000, Slovenia State Univ Ghent, B-9000 Ghent, Belgium State Univ Ghent Ghent Belgium B-9000 Univ Ghent, B-9000 Ghent, Belgium Univ London Kings Coll, London WC2R 2LS, England Univ London Kings Coll London England WC2R 2LS London WC2R 2LS, England Univ Karlsruhe, Karlsruhe, Germany Univ Karlsruhe Karlsruhe GermanyUniv Karlsruhe, Karlsruhe, Germany Ist Nazl Fis Nucl, Pisa, Italy Ist Nazl Fis Nucl Pisa ItalyIst Nazl Fis Nucl, Pisa, Italy Brookhaven Natl Lab, Upton, NY 11973 USA Brookhaven Natl Lab Upton NY USA11973 aven Natl Lab, Upton, NY 11973 USA AF Ioffe Physicotech Inst, St Petersburg, Russia AF Ioffe Physicotech Inst St Petersburg Russia t, St Petersburg, Russia STMicroelectronics, Catania, Italy STMicroelectronics Catania ItalySTMicroelectronics, Catania, Italy Inst Phys Nucl, Demokritos, Greece Inst Phys Nucl Demokritos GreeceInst Phys Nucl, Demokritos, Greece Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA Univ Calif Berkeley Berkeley CA USA 94720 & Engn, Berkeley, CA 94720 USA PSI, Villigen, Switzerland PSI Villigen SwitzerlandPSI, Villigen, Switzerland CERN, Geneva, Switzerland CERN Geneva SwitzerlandCERN, Geneva, Switzerland Univ London Imperial Coll Sci Technol & Med, London, England Univ London Imperial Coll Sci Technol & Med London England don, England Czech Tech Univ, CR-16635 Prague, Czech Republic Czech Tech Univ Prague Czech Republic CR-16635 35 Prague, Czech Republic Univ Montreal, Montreal, PQ, Canada Univ Montreal Montreal PQ CanadaUniv Montreal, Montreal, PQ, Canada Ukrainian Acad Sci, Inst Nucl Res, UA-252028 Kiev, Ukraine Ukrainian Acad Sci Kiev Ukraine UA-252028 l Res, UA-252028 Kiev, Ukraine Inst Elect Mat Technol, Warsaw, Poland Inst Elect Mat Technol Warsaw Poland Elect Mat Technol, Warsaw, Poland Univ Modena, I-41100 Modena, Italy Univ Modena Modena Italy I-41100Univ Modena, I-41100 Modena, Italy Tel Aviv Univ, Dept Engn, IL-69978 Tel Aviv, Israel Tel Aviv Univ Tel Aviv Israel IL-69978 t Engn, IL-69978 Tel Aviv, Israel IV Kurchatov Atom Energy Inst, Moscow 123182, Russia IV Kurchatov Atom Energy Inst Moscow Russia 123182 Moscow 123182, Russia IV Kurchatov Atom Energy Inst, Prague, Czech Republic IV Kurchatov Atom Energy Inst Prague Czech Republic gue, Czech Republic Acad Sci Czech Republ, Inst Phys, Prague, Czech Republic Acad Sci Czech Republ Prague Czech Republic hys, Prague, Czech Republic CiS Inst Mikrosensor gGMBH, Erfurt, Germany CiS Inst Mikrosensor gGMBH Erfurt Germany sensor gGMBH, Erfurt, Germany SINTEF, Oslo, Norway SINTEF Oslo NorwaySINTEF, Oslo, Norway Royal Inst Technol, Stockholm, Sweden Royal Inst Technol Stockholm Sweden yal Inst Technol, Stockholm, Sweden Inst Nucl Phys & Engn, Bucharest, Romania Inst Nucl Phys & Engn Bucharest Romania Phys & Engn, Bucharest, Romania Charles Univ, Fac Math & Phys, Inst Nucl & Particle Phys, Prague, Czech Republic Charles Univ Prague Czech Republic article Phys, Prague, Czech Republic Univ Dortmund, Dortmund, Germany Univ Dortmund Dortmund GermanyUniv Dortmund, Dortmund, Germany
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
fascicolo: 1, volume: 465, anno: 2001,
pagine: 60 - 69
SICI:
0168-9002(20010601)465:1<60:DFRHSD>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Keywords:
silicon detectors; gamma-, neutron-, proton and pion irradiation; improved radiation tolerance by oxygen enrichment; annealing studies; consequences for high energy physics applications;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Lindstrom, G Univ Hamburg, Inst Expt Phys 2, Gbd 67b,Luruper Chaussee 149,D-22761 Hamburg, Germany Univ Hamburg Gbd 67b,Luruper Chaussee 149 Hamburg Germany D-22761
Citazione:
G. Lindstrom et al., "Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration", NUCL INST A, 465(1), 2001, pp. 60-69

Abstract

This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al, (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005), A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on thechanges of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature andoperational time is verified: projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour was also been achieved but will not be covered in detail. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 11/07/20 alle ore 20:03:32