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Titolo:
Investigation of SiGe-heterostructure nanowires
Autore:
Giovine, E; Notargiacomo, A; Di Gaspare, L; Palange, E; Evangelisti, F; Leoni, R; Castellano, G; Torrioli, G; Foglietti, V;
Indirizzi:
Univ Roma Tre, Dipartimento Fis E Amaldi, Unita INFM, I-00146 Rome, Italy Univ Roma Tre Rome Italy I-00146 Amaldi, Unita INFM, I-00146 Rome, Italy CNR, IESS, Inst Elettron Stato Solido, I-00156 Rome, Italy CNR Rome Italy I-00156 , Inst Elettron Stato Solido, I-00156 Rome, Italy
Titolo Testata:
NANOTECHNOLOGY
fascicolo: 2, volume: 12, anno: 2001,
pagine: 132 - 135
SICI:
0957-4484(200106)12:2<132:IOSN>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; HIGH-FIELD TRANSPORT; SI/SIGE HETEROSTRUCTURES; ULTRATHIN WIRES; MOBILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Giovine, E Univ Roma Tre, Dipartimento Fis E Amaldi, Unita INFM, Via VascaNavale 84,I-00146 Rome, Italy Univ Roma Tre Via Vasca Navale 84 Rome Italy I-00146 me, Italy
Citazione:
E. Giovine et al., "Investigation of SiGe-heterostructure nanowires", NANOTECHNOL, 12(2), 2001, pp. 132-135

Abstract

Transport characterizations of wires obtained by electron beam Lithographyand etching of (100)Si/SiGe heterostructures with a high-mobility two-dimensional electron gas are reported. Depending on the wire width, two different regimes for the electrical transport are found. Wires with a width larger than similar to 200 nm exhibit metallic behaviour in the quasi-ballistic regime. The conductance dependence on the wire width reveals the presence of a depletion layer, similar to 100 nm thick, on each etched side of the wire. The wires of width smaller than 200 nm have very large resistance and two different behaviours. The first kind of wires exhibit a zero-current region, compatible with a Coulomb blockade effect involving multiple tunnel junctions or with. a space-charge limited current. Other wires are insulatingup to applied voltages larger than 5-6 V and their I-V characteristics canbe fitted by the functional dependence of voltage-induced tunnelling of Fowler-Nordheim type.

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Documento generato il 27/09/20 alle ore 00:10:54