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Titolo:
Indium doping on MBE grown HgCdTe
Autore:
Wu, Y; Wang, SL; Chen, L; Yu, MF; Qiao, YM; He, L;
Indirizzi:
Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China Chinese Acad Sci Shanghai Peoples R China 200083 200083, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Chinese Acad Sci Shanghai Peoples R China 200083 200083, Peoples R China
Titolo Testata:
JOURNAL OF INFRARED AND MILLIMETER WAVES
fascicolo: 3, volume: 20, anno: 2001,
pagine: 174 - 178
SICI:
1001-9014(200106)20:3<174:IDOMGH>2.0.ZU;2-E
Fonte:
ISI
Lingua:
CHI
Soggetto:
MOLECULAR-BEAM-EPITAXY; P-TYPE; ELECTRICAL-PROPERTIES; LAYERS; LONG;
Keywords:
MBE; HgCdTe; in doping;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Wu, Y Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China Chinese Acad Sci Shanghai Peoples R China 200083 , Peoples R China
Citazione:
Y. Wu et al., "Indium doping on MBE grown HgCdTe", J INF M W, 20(3), 2001, pp. 174-178

Abstract

The results of indium doping on MBE grown HgCdTe were described. It was found that the indium electrical activation was close to 100% in HgCdTe and the donor activation energy was at least smaller than 0.6 meV. It was confirmed that a donor concentration of similar to3 X 10(15)cm(-3) was necessarily preserved for infrared FPAs applications. The diffusion behavior of indium was studied by thermal annealing, and a diffusion coefficient of similar to 10(-14) cm(2)/sec at 400C was obtained, which confirms the feasibility and validity of indium as an n-type dopant.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 21:44:09