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Titolo:
Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B
Autore:
Aqariden, F; Shih, HD; Turner, AM; Liao, PK;
Indirizzi:
DRS Infrared Technol LP, Dallas, TX 75374 USA DRS Infrared Technol LP Dallas TX USA 75374 hnol LP, Dallas, TX 75374 USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 6, volume: 30, anno: 2001,
pagine: 794 - 796
SICI:
0361-5235(200106)30:6<794:DRIHGB>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
HGCDTE;
Keywords:
HgCdTe; MBE; defect reduction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Aqariden, F DRS Infrared Technol LP, 13544 N Cent Expressway,POB 740188, Dallas, TX 75374 USA DRS Infrared Technol LP 13544 N Cent Expressway,POB 740188 Dallas TX USA 75374
Citazione:
F. Aqariden et al., "Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B", J ELEC MAT, 30(6), 2001, pp. 794-796

Abstract

A study on preparation of Cd0.96Zn0.04Te(211)B substrates for growth of Hg1-xCdxTe epitaxial layers by molecular beam epitaxy (MBE) was investigated. The objective was to investigate the impact of starting substrate surface quality on surface defects such as voids and hillocks commonly observed on MBE Hg1-xCdxTe layers. The results of this study indicate that, when the Cd0.96Zn0.04Te(211)B substrates are properly prepared, surface defects on theresulting MBE Hg1-xCdxTe films are reduced to minimum (size similar to0.1 mum and density similar to 500/cm(2)), so that these MBE Hg1-xCdxTe films have surface quality as good as that of liquid phase epitaxial (LPE) Hg1-xCdxTe films currently in production in this laboratory.

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Documento generato il 04/04/20 alle ore 12:16:43